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1/12 www.dynexsemi.com features double side cooling high reliability in service high voltage capability fault protection without fuses high surge current capability turn-off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications variable speed ac motor drive inverters (vsd- ac) including traction drives uninterruptable power supplies high voltage converters choppers welding induction heating dc/dc converters key parameters i tcm 3000a v drm 4500v i (av) 780a dv d /dt* 1000v/s di t /dt 400a/s outline type code: c (see package details for further information) fig. 1 package outline voltage ratings type number repetitive peak off-state voltage v drm (v) repetitive peak reverse voltage v rrm (v) conditions dg808bc45 4500 16 t vj = 125c, i dm =100ma, i rrm = 50ma current ratings symbol parameter conditions max. units i tcm repetitive peak controllable on-state current v d = 66%v drm , t j = 125c, di gq /dt = 40a/ s, c s = 4 f 3000 a i t(av) mean on-state current t hs = 80c, double side cooled. half sine 50hz 780 a i t(rms) rms on-state current t hs = 80c, double side cooled. half sine 50hz 1225 a dg808bc45 gate turn-off thyristor ds5914- 2 j uly 2014 ( l n31731 )
semiconductor dg808bc45 2/12 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i tsm surge (non repetitive) on-state current 10ms half sine. t j = 125c 16.0 ka i 2 t i 2 t for fusing 10ms half sine. t j = 125c 1.28 ma 2 s di t /dt critical rate of rise of on-state current v d = 3000v, i t = 3000a, t j = 125c, i fg > 40a, rise time > 1.0 s 400 a/ s to 66% v drm ; r gk 1.5 , t j = 125c 100 v/ s dv d /dt rate of rise of off-state voltage to 66% v drm ; v rg -2v, t j = 125c 1000 v/ s l s peak stray inductance in snubber circuit i t = 3000a, v d = v drm , tj = 125 o c, di gq = 40a/us, c s = 4.0uf 200 nh gate ratings symbol parameter test conditions min. max. units v rgm peak reverse gate voltage this value may exceeded during turn-off - 16 v i fgm peak forward gate current - 100 a p fg(av) average forward gate power - 20 w p rgm peak reverse gate power - 24 kw di gq /dt rate of rise of reverse gate current 30 60 a/ s t on(min) minimum permissible on time 50 - s t off(min) minimum permissible off time 100 - s thermal and mechanical ratings symbol parameter test conditions min. max. units double side cooled dc - 0.014 c/w anode dc - 0.0233 c/w r th(j-hs) thermal resistance ? junction to heatsink surface single side cooled cathode dc - 0.035 c/w r th(c-hs) contact thermal resistance clamping force 36.0kn with mounting compound per contact - 0.0036 c/w t vj virtual junction temperature on-state (conducting) -40 125 c t op /t stg operating junction/storage temperature range -40 125 c f m clamping force 28.0 44.0 kn
semiconductor dg808bc45 3/12 www.dynexsemi.com characteristics tj =125 o c unless stated otherwise symbol parameter test conditions min. max. units v tm) on-state voltage at 3000a peak, i g(on) = 10a d.c. - 3.75 v i dm peak off-state current v drm = 4500v, v rg = 0v - 100 ma i rrm peak reverse current v rrm = 16v - 50 ma v gt gate trigger voltage v d = 24v, i t = 100a, tj = 25 o c - 1.2 v i gt gate trigger current v d = 24v, i t = 100a, tj = 25 o c - 3.5 a i rgm reverse gate cathode current v rgm = 16v, no gate/cathode resistor - 10 ma e on turn-on energy - 2860 mj t d delay time - 2.1 s t r rise time v d = 3000v i t = 3000a, di t /dt = 300a/s i fg = 40a, rise time < 1.0s - 4.8 s e off turn-off energy - 12000 mj t gs storage time - 25 s t gf fall time 2 s t gq gate controlled turn-off time - 27 s q gq turn-off gate charge 12000 c q gqt total turn-off gate charge 24000 c i gqm peak reverse gate current i t = 3000a, v dm = vdrm snubber cap cs = 4.0c di gq /dt = 40a/us - 800 a
semiconductor dg808bc45 4/12 www.dynexsemi.com 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 junction temperature tj - ( o c) gate trigger voltage v gt - (v) 0 1 2 3 4 5 6 7 8 9 10 gate trigger current i gt - (a) v gt i gt 0 500 1000 1500 2000 2500 3000 3500 1 1.5 2 2.5 3 3.5 4 instantaneous on-state voltage v tm - (v) instantaneous on-state current i t - (a) tj=25 o c tj=125 o c measured under pulse conditions. i g(on) = 10a half sine wave 10ms fig.2 maximum gate trigger voltage/current vs junction temperature fig.3 on-state characteristics 0 500 1000 1500 2000 2500 3000 3500 4000 0 2 4 6 8 snubber capacitance c s - (uf) maximum permissible turn-off current i tcm - (a) conditions: tj = 125 o c v dm = v drm di gq = 40a/us fig.4 maximum dependence of i tcm on c s fig.5 maximum (limit) transient thermal impedance- double side cooled
semiconductor dg808bc45 5/12 www.dynexsemi.com 0 5 10 15 20 25 30 35 40 0.0001 0.001 0.01 0.1 1 pulse duration - (s) peak half sine wave on-state current - (ka) 0 500 1000 1500 2000 2500 3000 3500 0 1000 2000 3000 on-state current i t -(a) turn-on energy loss e on - (mj) v d = 3000v v d = 2000v v d = 1000v conditions: t j = 125 o c; i fgm = 40a cs = 4.0uf; rs = 10 ohms di t /dt = 300a/us di fg / dt = 40a/us fig.6 surge (non-repetitive) on-state current vs time fig.7 turn-on energy vs on-state current 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 20 40 60 80 100 peak forward gate current i fgm - (a) turn-on energy loss e on - (mj) conditions: t j = 125 o c; i t = 3000a cs = 4.0uf rs = 10 ohms d it /dt = 300a/us di fg /dt = 40a/us v d = 1000v v d = 2000v v d = 3000v 0 500 1000 1500 2000 2500 3000 3500 0 100 200 300 400 rate of rise of on-state current di t /dt - (a/us) turn-on energy loss e on - (mj) v d = 3000v v d = 2000v v d = 1000v conditions: i t = 3000a;t j = 125 o c c s = 4.0uf;r s = 10 ohms i fgm = 40a;di fg /dt = 40a/us fig.8 turn-on energy vs forward gate current fig.9 turn-on energy vs rate of rise of on-state current
semiconductor dg808bc45 6/12 www.dynexsemi.com 0 1 2 3 4 5 6 0 500 1000 1500 2000 2500 3000 on-state current i t - (a) turn-on delay time, t d , and rise time, t r - (us) delay time rise time conditions: t j = 125 o c; i fgm = 40a cs = 4.0uf; rs = 10 ohms di t /dt = 300a/us vd = 2000v 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 peak forward gate current i fgm - (a) turn-on delay time, t d , and rise time, t r - (us) rise time delay time conditions: i t = 3000a t j = 125 o c cs = 4.0uf rs = 10 ohms di t /dt = 300a/us di fg /dt = 40a/us v d = 3000v fig.10 delay and rise time vs on-state current fig.11 delay and rise time vs peak forward gate current 0 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 on-state current, it - (a) turn-off energy per pulse e off - (mj) conditions: tj = 125 o c cs = 4.0uf di gq /dt = 40a/us v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm 5000 6000 7000 8000 9000 10000 11000 12000 13000 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/us) turn-off energy per pulse e off - (mj) v dm = 100% v drm v dm = 75% v drm v dm = 50% v drm conditions: t j = 125 o c cs = 4.0uf i t = 3000a fig.12 turn-off energy vs on-state current fig.13 turn-off energy loss vs rate of rise of reverse gate current
semiconductor dg808bc45 7/12 www.dynexsemi.com 0 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 on-state current i t - (a) turn-off energy per pulse e off - (mj) c s = 4uf c s = 3 uf c s = 2.5 uf c s = 2 uf conditions : tj = 125 o c v dm = v drm di gq /dt = 40 a/us 0 5 10 15 20 25 30 0 1000 2000 3000 4000 on-state current i t - (a) gate storage time t gs - (us) t j = 125 o c t j = 25 o c conditions : cs = 4 uf di gq /dt = 40 a/us fig.14 turn-off energy vs on-state current fig.15 gate storage time vs on-state current 15 20 25 30 35 40 20 30 40 50 rate of rise of reverse gate current di gq /dt - (a/us) gate storage time t gs - (us) tj = 125 o c tj = 25 o c conditions: i t = 3000a cs = 4.0uf 0 0.5 1 1.5 2 2.5 0 1000 2000 3000 4000 on-state current i t - (a) gate fall time t gf - (us) t j = 125 o c t j = 25 o c conditions: cs = 4.0uf digq/dt = 40a/us fig.16 gate storage time vs rate of rise of reverse gate current fig.17 gate fall time vs on-state current
semiconductor dg808bc45 8/12 www.dynexsemi.com 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 20 30 40 50 60 rate of rise of reverse gate current di gq /dt - (a/us) gate fall time t gf - (us) conditions: i t = 3000a cs = 4.0uf tj = 125 o c tj = 25 o c 200 300 400 500 600 700 800 900 0 1000 2000 3000 4000 on-state current i t - (a) peak reverse gate current i gqm - (a) conditions: cs = 4.0uf di gq /dt = 40a/us tj = 125 o c tj = 25 o c fig.18 gate fall time vs rate of rise of reverse gate current fig.19 peak reverse gate current vs on-state current 600 625 650 675 700 725 750 775 800 825 850 20 25 30 35 40 45 50 55 60 65 rate of rise of reverse gate current di gq /dt - (a/us) peak reverse gate current i gqm - (a) conditions: i t = 3000a cs = 4.0uf tj = 125 o c tj = 25 o c 0 2000 4000 6000 8000 10000 12000 14000 0 1000 2000 3000 4000 on-state current i t - (a) turn-off gate charge q gq - (uc) tj = 25 o c tj = 125 o c conditions: cs = 4.0uf digq/dt = 40a/us fig.20 reverse gate current vs rate of rise of reverse gate current fig.21 turn-off gate charge vs on-state current
semiconductor dg808bc45 9/12 www.dynexsemi.com 8000 9000 10000 11000 12000 13000 14000 15000 20 30 40 50 rate of rise of reverse gate current di gq /dt - (a/us) turn-off gate charge q gq - (uc) tj = 125 o c tj = 25 o c conditions: i t = 3000a cs = 4.0uf 0 100 200 300 400 500 600 700 800 900 1000 0.1 1 10 100 1000 gate cathode resistance r gk - (ohms) rate of rise of off-state voltage dv/dt - (v/us) v d = 2250v v d = 3000v tj = 125 o c fig.22 turn-off charge vs rate of rise of reverse gate current fig.23 rate of rise of off-state voltage vs gate cathode resistance
semiconductor dg808bc45 10/12 www.dynexsemi.com fig.24 general switching waveforms
semiconductor dg808bc45 11/12 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 1400g clamping force: 31.5 10% l e ad coaxial, length: 600mm package outline type code: c fig.31 package outline
important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate application design and safety precautions should always be followed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. the annotations are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on request. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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