, o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 vn66 series n-channel enhancement-mode mos transistors product summary part number VN66AD vn66afd v(br)dss (v) 60 60 ros(on) (n> 3 3 id (a) 1.7 1,46 package to-220 to-z20sd performance curves: vndq06 (see section 7) to-220/to-220sd top view to-220 1 gate 2 & tab - drain 3 source 1 2 3 to-220sd 1 source 2 gate 3 & tab - drain absolute maximum ratings (tc = 25c unless otherwise noted)2 parameters/test conditions drain-source voltage gate-source voltage continuous drain current tc=25c tc = wc pulsed drain current1 power dissipation tc= 25c tc = 100c operating junction and storage temperature lead temperature (1/16" from case for 10 seconds) symbol vds vqs l ., id i dm pd tj. tstg tl VN66AD 60 30 1,7 1 3 20 8 vn86afd 60 30 1.46 0.92 3 15 6 -55 to 150 300 units v a w "c thermal resistance thermal resistance junction-to-case symbol rthjc VN66AD 6.25 vn66afd 8.3 units "c/w 'pulse width limited by maximum junction temperature. 2absolute maximum ratings have been revised. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
vn66 series electrical characteristics1 parameter static drain-source breakdown voltage gato threshold voltage date-body leakage zero gate voltage drain currant on-state drain current^ drain-source cm-resistance' forward , transconductanos ?* common source output conductance3 symbol v(8fl)oss vgsim igss loss 'o(on| rds[on) 9ps ?os dynamic input capacitance output capacitance reverse transfer capacitance eiss' gsss c,,, test conditions4 limits typa vn664 min vos = ov, i0 = 10.ha vds = vqs.id = 1 ma vns = 0 v v03=30v t0=125'c vqs = 0 v vqs = 48v t0=125c vds = 10 v. vqs = 10 v vqs = 5v. id = 0.3 a v |
