surface mount reverse voltage - 50 to 1000 volts ultra fast rectifiers forward current - 1.0 ampere features ? glass passivated chip ? ultra fast switching for high efficiency ? for surface mounted applications ? low forward voltage drop and high current capability ? low reverse leakage current ? plastic material has ul flammability classification 94v-0 high temperature soldering : 260 ? o c / 10 seconds at terminals ? pb free product at available : 99% sn above meet rohs environment substance directive request mechanical data ? case : molded plastic ? polarity : indicated by cathode band ? weight : 0.003 ounces, 0.093 grams maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20% characteristics symbol uf1a uf1b uf1d UF1G uf1j uf1k uf1m unit maximum recurrent peak reverse v oltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward rectified current @tl =75 i (av) 1.0 a peak for ward surge current 8.3ms single half sine- wave super imposed on rated load (jedec method) i fsm 30 a maxi mum f orward voltage at 1.0a dc v f 1.0 1.3 1.5 1.7 v maxi mum dc reverse cur rent @tj =25 at rated dc blocking voltage @tj =100 i r 5 100 ua maximum reverse recovery time (note 1) t rr 50 75 ns typical junction capacitance (note 2) c j 20 10 pf typical thermal resistance (note 3 ) r jl 30 oper ating temperature range t j -55 to +150 storage temperature range t stg -55 to +150 notes : 1.reverse recovery test conditions :i f =0.5a,i r =1.0a,i rr =0.25a. 2.measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3.thermal resistance junction to lead. .083(2.11) .075(1.91) .012(.305) .006(.152) .012(.31) .006(.15) .008(.203) .002(.051) .050(1.27) .030(0.76) smb/do-214aa unit:inch(mm) .155(3.94) .130(3.30) .185(4.70) .160(4.06) .096(2.44) .083( 2.13) .220(5.59) .200(5.08) data sheet uf1a~uf1m semiconductor http://www.yeashin.com 1 rev.02 20110725 c c c c c c/w c
rating and characteristic curves note:1.rise time = 7ns max. input impedance = 1 megohm. 22pf 2.rise time = 10ns max. source impedance = 50 ohms t rr +0.5a 0 -0.25 -1.0 set time 1cm base for 50 ns/cm fi g . 1-reverse recovery time characteristic and test circuit diagram 10 1.0 0.1 .01 0 . 2 .4 . 6 .8 1.0 1.2 1.4 typical tj = 25 uf1a UF1G uf1k 100 10 1 0.1 1 10 100 tj = 25 f = 1.0mhz vsig = 50m vp-p reverse voltage, volts fig. 2-forward characteristics fig. 3- typical junction capacitance 2.0 1.0 25 50 75 100 125 150 175 single phase half wave resistive or inductive p.c.b mounted on 0.3150.315" ( 8.08.0mm ) pad areas lead temperature, 30 25 20 15 10 5 1 2 5 10 20 50 100 8.3ms single half sine wave jedec method number of cycles at 60hz fig. 4- forward current derating curve fig. 5-peak forward surge current peak forward surge current, amperes peak forward surge current, amperes ifm, apk average forward current amperes uf1a~uf1m http://www.yeashin.com 2 rev.02 20110725 c c c
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