spc6604 description applications the spc6604 is the n- a nd p-channel enhancement mode power field effect transistors are produced using high cell density , dmos trench technology. this high density process is especially tailored to minimize on-state resistance and provide superior switching performance. these devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. z power management in note book z portable equipment z battery powered system z dc/dc converter z load switch z dsc z lcd display inverter features pin configuration( tsop? 6p ) part marking ? n-channel 20v/4.0a,r ds(on) =50m ? @v gs =4.5v 20v/3.4a,r ds(on) =60m ? @v gs =2.5v 20v/2.8a,r ds(on) =75m ? @v gs =1.8v 20v/1.0a,r ds(on) =120m ? @v gs =1.25v ? p-channel -20v/-3.4a,r ds(on) = 85m ? @v gs =-4.5v -20v/-2.4a,r ds(on) =110m ? @v gs =-2.5v -20v/-1.7a,r ds(on) =130m ? @v gs =-1.8v -20v/-1.0a,r ds(on) =200m ? @v gs =-1.25v ? super high density cell design for extremely low rds (on) ? exceptional on-resistance and maximum dc current capability ? tsop? 6p package design product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
pin description pin symbol description 1 g1 gate 1 2 s2 source 2 3 g2 gate 2 4 d2 drain 2 5 s1 source 1 6 d1 drain1 ordering information part number package part marking SPC6604ST6RG tsop- 6p 04yw week code : a ~ z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) SPC6604ST6RG : tape reel ; pb ? free absoulte maximum ratings (t a =25 unless otherwise noted) typical parameter symbol n-channel p-channel unit drain-source voltage v dss 20 -20 v gate ?source voltage v gss 12 12 v t a =25 -3.4 -2.8 continuous drain current(t j =150 ) t a =70 4.0 3.4 -2.4 -2.1 a pulsed drain current i dm 10 -8 a continuous source current(diode conduction) i s 1.6 -1.4 a t a =25 1.15 power dissipation t a =70 p d 0.75 w operating junction temperature t j -55/150 storage temperature range t stg -55/150 t 10sec 50 52 thermal resistance-junction to ambient steady state r ja 90 90 /w spc6604 product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static v gs =0v,i d = 250ua n-ch 20 drain-source breakdown voltage v (br)dss v gs =0v,i d =-250ua p-ch -20 v ds =v gs ,i d =250ua n-ch 0.4 1.0 gate threshold voltage v gs(th) v ds =v gs ,i d =-250ua p-ch -0.35 -0.8 v v ds =0v,v gs =12v n-ch 100 gate leakage current i gss v ds =0v,v gs =12v p-ch 100 na v ds = 20v,v gs =0v n-ch 1 v ds =-20v,v gs =0v p-ch -1 v ds = 20v,v gs =0v t j =55 n-ch 10 zero gate voltage drain current i dss v ds =-20v,v gs =0v t j =55 p-ch -10 ua v ds 4.5v,v gs = 10v n-ch 6 on-state drain current i d(on) v ds -4.5v,v gs =-10v p-ch -6 a v gs =4.5v,i d =4.0a n-ch 0.040 0.050 v gs =-4.5v,i d =-3.4a p-ch 0.068 0.085 v gs =2.5v,i d =3.4a n-ch 0.046 0.060 v gs =-2.5v,i d =-2.4a p-ch 0.090 0.110 v gs =1.8v,i d =2.8a n-ch 0.056 0.075 v gs =-1.8v,i d =-1.7a p-ch 0.113 0.130 v gs =1.25v,i d =1.0a n-ch 0.105 0.120 drain-source on-resistance r ds(on) v gs =-1.25v,i d =-1.0a p-ch 0.185 0.200 ? v ds =5v,i d =-3.6a n-ch 10 forward transconductance gfs v ds =-5v,i d =-2.8a p-ch 6 s i s =1.6a,v gs =0v n-ch 0.8 1.2 diode forward voltage v sd i s =-1.5a,v gs =0v p-ch -0.8 -1.2 v dynamic n-ch 4.8 8 total gate charge q g p-ch 4.8 8 n-ch 1.0 gate-source charge q gs p-ch 1.0 n-ch 1.0 gate-drain charge q gd n-channel v ds =6v,v gs =4.5v, i d 2.8a p-channel v ds =-6v,v gs =-4.5v ,i d -2.8a p-ch 1.0 nc n-ch 8 14 t d(on) p-ch 10 16 n-ch 12 18 turn-on time t r p-ch 13 23 n-ch 30 35 t d(off) p-ch 18 25 n-ch 12 16 turn-off time t f n-channel v dd =6v,r l =6 ? ,i d 1.0a v gen =4.5v ,r g =6 ? p-channel v dd =-6v,r l =6 ? ,i d -1.0a v gen =-4.5v ,r g =6 ? p-ch 15 20 ns spc6604 product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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