n - c h a n n e l e n h a n c e m e n t m o d e m o s f e t c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 a n p e c r e s e r v e s t h e r i g h t t o m a k e c h a n g e s t o i m p r o v e r e l i a b i l i t y o r m a n u f a c t u r a b i l i t y w i t h o u t n o t i c e , a n d a d v i s e c u s t o m e r s t o o b t a i n t h e l a t e s t v e r s i o n o f r e l e v a n t i n f o r m a t i o n t o v e r i f y b e f o r e p l a c i n g o r d e r s . a p m 6 0 0 1 n f p i n c o n f i g u r a t i o n o r d e r i n g a n d m a r k i n g i n f o r m a t i o n f e a t u r e s a p p l i c a t i o n s 6 0 v / 2 5 a , r d s ( o n ) = 5 0 m w ( t y p . ) @ v g s = 1 0 v r d s ( o n ) = 6 5 m w ( t y p . ) @ v g s = 4 . 5 v s u p e r h i g h d e n s e c e l l d e s i g n r e l i a b l e a n d r u g g e d l e a d f r e e a n d g r e e n d e v i c e s a v a i l a b l e ( r o h s c o m p l i a n t ) p o w e r m a n a g e m e n t i n d c / d c c o n v e r t e r , d c / a c i n v e r t e r s y s t e m s . n o t e : a n p e c l e a d - f r e e p r o d u c t s c o n t a i n m o l d i n g c o m p o u n d s / d i e a t t a c h m a t e r i a l s a n d 1 0 0 % m a t t e t i n p l a t e t e r m i n a - t i o n f i n i s h ; w h i c h a r e f u l l y c o m p l i a n t w i t h r o h s . a n p e c l e a d - f r e e p r o d u c t s m e e t o r e x c e e d t h e l e a d - f r e e r e q u i r e m e n t s o f i p c / j e d e c j - s t d - 0 2 0 c f o r m s l c l a s s i f i c a t i o n a t l e a d - f r e e p e a k r e f l o w t e m p e r a t u r e . a n p e c d e f i n e s ? g r e e n ? t o m e a n l e a d - f r e e ( r o h s c o m p l i a n t ) a n d h a l o g e n f r e e ( b r o r c l d o e s n o t e x c e e d 9 0 0 p p m b y w e i g h t i n h o m o g e n e o u s m a t e r i a l a n d t o t a l o f b r a n d c l d o e s n o t e x c e e d 1 5 0 0 p p m b y w e i g h t ) . apm6001n handling code temperature range package code package code f : to-220 operating junction temperature range c : -55 to 150 o c handling code tu : tube assembly material l : lead free device g: halogen and lead free device apm6001n f : apm6001n xxxxx xxxxx - date code assembly material top view of to-220 g d s g s d n-channel mosfet
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 2 a p m 6 0 0 1 n f a b s o l u t e m a x i m u m r a t i n g s symbol parameter rating unit common ratings (t a =25 c unless otherwise noted) v dss drain - source voltage 60 v gss gate - source voltage 20 v t j maximum junction temperature 150 c t stg storage temperature range - 55 to 150 c i s diode continuous forward current t c =25 c 2.5 a mounted on large heat sink t c =25 c 100 i d p 300 s pulse drain current tested t c =100 c 64 a t c =25 c 25 i d continuous drain current t c =100 c 16 a t c =25 c 62.5 p d maximum power dissipation t c =100 c 25 w r q jc thermal resistance - junction to case 2 c /w mounted on pcb of minimum f ootprint t a =25 c 20 i d p 300 s pulse drain current tested t a =100 c 12 a t a = 25 c 6 i d continuous drain current t a = 100 c 3 a t a = 25 c 2 p d maximum power dissipation t a = 100 c 0.8 w r q ja thermal resistance - junction to ambient 62.5 c /w
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 3 a p m 6 0 0 1 n f e l e c t r i c a l c h a r a c t e r i s t i c s ( t a = 2 5 c u n l e s s o t h e r w i s e n o t e d ) apm 6001nf symbol parameter test condition s min. typ. max. unit static characteristics bv dss drain - source breakdown voltage v gs =0v, i ds =250 m a 60 - - v v ds = 48 v, v gs =0v - - 1 i dss zero gate voltage drain current t j =85 c - - 30 m a v gs(th) gate th reshold voltage v ds =v gs , i ds =250 m a 1 - 3 v i gss gate leakage current v gs = 16 v, v ds =0v - - 10 m a v gs =10v, i ds = 6 a - 50 65 r ds(on) a drain - source on - state resistance v gs = 4. 5v, i ds = 3 a - 65 90 m w diode characteristics v sd a diode forward voltage i sd = 2.5 a, v gs =0v - 0.8 1.1 v t rr reverse recovery time - 25 - ns q rr reverse recovery charge i d s = 6 a, dl sd /dt = 100a/ m s - 22 - nc dynamic characteristics b r g gate resistance v gs = 0 v,v ds =0v ,f=1mhz - 4.5 - w c iss input capacitance - 550 - c oss output capacitance - 50 - c rss reverse transfer capacitance v gs =0v, v ds =30v, f requency =1.0m hz - 30 - pf t d(on) turn - on delay time - 7 14 t r turn - on rise time - 6 12 t d(off) turn - off delay time - 27 50 t f turn - off fa ll time v dd = 30 v, r l = 30 w , i d s =1a, v gen =10 v , r g =6 w - 9 17 ns gate charge characteristics b q g total gate charge - 12.4 17.4 q gs gate - source charge - 1.7 - q gd gate - drain charge v ds = 30 v, v gs = 10 v, i d s = 6 a - 3.1 - nc notes : a : pulse test ; pulse width 3 00 m s, duty cycle 2% . b : guaranteed by design, not subject to production testing .
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 4 a p m 6 0 0 1 n f t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s p o w e r d i s s i p a t i o n p tot - power (w) t j - junction temperature ( o c) i d - drain current (a) d r a i n c u r r e n t t j - j u n c t i o n t e m p e r a t u r e ( c ) s a f e o p e r a t i o n a r e a v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) normalized transient thermal resistance t h e r m a l t r a n s i e n t i m p e d a n c e s q u a r e w a v e p u l s e d u r a t i o n ( s e c ) 0 20 40 60 80 100 120 140 160 180 0 10 20 30 40 50 60 70 t c =25 o c 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 t c =25 o c,v g =10v 0.1 1 10 100 200 0.1 1 10 100 200 300 m s 1ms 1s 10ms 100ms dc rds(on) limit t c =25 o c 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 2 mounted on 1in 2 pad r q ja :62.5 o c/w 0.01 0.02 0.05 0.1 0.2 single pulse duty = 0.5
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 5 a p m 6 0 0 1 n f v d s - d r a i n - s o u r c e v o l t a g e ( v ) i d - drain current (a) o u t p u t c h a r a c t e r i s t i c s r ds(on) - on - resistance (m w ) d r a i n - s o u r c e o n r e s i s t a n c e i d - d r a i n c u r r e n t ( a ) v g s - g a t e - s o u r c e v o l t a g e ( v ) r ds(on) - on - resistance (m w ) t j - j u n c t i o n t e m p e r a t u r e ( c ) g a t e t h r e s h o l d v o l t a g e normalized threshold vlotage d r a i n - s o u r c e o n r e s i s t a n c e 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 14 16 18 20 4v 3.5v 3v v gs = 4.5,5,6,7,8,9,10v 0 4 8 12 16 20 30 40 50 60 70 80 90 100 v gs =4.5v v gs =10v 2 3 4 5 6 7 8 9 10 40 50 60 70 80 90 100 i d =6a -50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 i ds =250 m a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 6 a p m 6 0 0 1 n f d r a i n - s o u r c e o n r e s i s t a n c e normalized on resistance t j - j u n c t i o n t e m p e r a t u r e ( c ) v s d - s o u r c e - d r a i n v o l t a g e ( v ) s o u r c e - d r a i n d i o d e f o r w a r d i s - source current (a) v d s - d r a i n - s o u r c e v o l t a g e ( v ) c - capacitance (pf) c a p a c i t a n c e g a t e c h a r g e q g - g a t e c h a r g e ( n c ) v gs - gate-source voltage (v) -50 -25 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 r on @t j =25 o c: 50m w v gs = 10v i ds = 6a 0.0 0.3 0.6 0.9 1.2 1.5 0.1 1 10 20 t j =150 o c t j =25 o c 0 5 10 15 20 25 30 0 100 200 300 400 500 600 700 800 frequency=1mhz crss coss ciss 0 2 4 6 8 10 12 14 0 1 2 3 4 5 6 7 8 9 10 v ds =30v i ds =6a t y p i c a l o p e r a t i n g c h a r a c t e r i s t i c s ( c o n t . )
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 7 a p m 6 0 0 1 n f a v a l a n c h e t e s t c i r c u i t a n d w a v e f o r m s s w i t c h i n g t i m e t e s t c i r c u i t a n d w a v e f o r m s dut 0.01 w tp v dd v ds l i l r g e as v dd t av i as v ds t p v dsx(sus) v dd r d dut v gs v d s r g tp t d (on) t r t d (off) t f v gs v ds 90% 10%
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 8 a p m 6 0 0 1 n f p a c k a g e i n f o r m a t i o n to-220 a2 l l 1 e p q d h 1 a a1 c d 1 e1 d 2 b b2 e/2 e e2 s y m b o l min. max. 4.83 0.51 1.14 1.78 0.36 0.61 14.22 16.51 1.40 12.19 a a1 b2 c d d1 d2 e millimeters b 0.38 1.02 2.54 bsc to-220 9.65 10.67 6.86 0.100 bsc min. max. inches 0.190 0.020 0.015 0.040 0.045 0.070 0.014 0.024 0.560 0.650 0.480 0.380 0.420 0.270 3.56 0.140 0.055 e1 0.355 0.250 0.580 p l l1 e 12.70 8.38 9.02 6.35 14.73 0.500 0.330 q h1 5.84 6.86 0.230 0.270 4.09 0.161 2.03 a2 2.92 0.080 0.115 e2 0.76 0.030 12.88 0.507 0.350 8.89 3.53 0.139 2.54 3.43 0.100 0.135 note: follow jedec to-220 ab.
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 9 a p m 6 0 0 1 n f d e v i c e s p e r u n i t package type unit quantity to - 220 tube 50 r e f l o w c o n d i t i o n ( i r / c o n v e c t i o n o r v p r r e f l o w ) r e l i a b i l i t y t e s t p r o g r a m t 25 c to peak tp ramp-up t l ramp-down ts preheat tsmax tsmin t l t p 25 t e m p e r a t u r e time critical zone t l to t p test item method description solderability mil - std - 883d - 2003 245 c, 5 sec holt mil - std - 883d - 1005.7 1000 hrs bias @125 c pct jesd - 22 - b, a102 168 hrs, 100 % rh, 121 c tst mil - std - 883d - 1011.9 - 65 c~150 c, 200 cycles
c o p y r i g h t ? a n p e c e l e c t r o n i c s c o r p . r e v . a . 1 - o c t . , 2 0 0 8 w w w . a n p e c . c o m . t w 1 0 a p m 6 0 0 1 n f profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (t l to t p ) 3 c/second max. 3 c/second max. preheat - temperature min (tsmin) - temperature max (tsmax) - time (min to max) (ts) 100 c 150 c 60 - 120 seconds 150 c 200 c 60 - 180 seconds time maintained above: - temperature (t l ) - time (t l ) 183 c 60 - 150 seconds 217 c 60 - 150 seconds peak /classification temperature (tp) see table 1 see table 2 time within 5 c of actual peak temperature (tp) 10 - 30 seconds 20 - 40 seconds ramp - down rate 6 c/sec ond max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note: all temperatures refer to topside of the package. measured on the body surface. table 2. pb - free process ? package classification reflow temperatures package thickness volume mm 3 <350 volume mm 3 350 - 2000 volume mm 3 >2000 <1.6 mm 260 +0 c* 260 +0 c* 260 +0 c* 1.6 mm ? 2.5 mm 260 +0 c* 250 +0 c* 245 +0 c* 3 2.5 mm 250 +0 c* 245 +0 c* 245 +0 c* *tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means peak reflow temperature +0 c. for example 260 c+0 c) at the rated msl level. table 1. snpb eutectic process ? package peak reflow temperature s package thickness volume mm 3 <350 volume mm 3 3 350 <2.5 mm 240 +0/ - 5 c 225 +0/ - 5 c 3 2.5 mm 225 +0/ - 5 c 225 +0/ - 5 c c u s t o m e r s e r v i c e anpec electronics corp. head office : no.6, dusing 1st road, sbip, hsin-chu, taiwan, r.o.c. tel : 886-3-5642000 fax : 886-3-5642050 taipei branch : 2f, no. 11, lane 218, sec 2 jhongsing rd., sindain city, taipei county 23146, taiwan tel : 886-2-2910-3838 fax : 886-2-2917-3838 c l a s s i f i c a t i o n r e f l o w p r o f i l e s
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