AM3446N v ds (v) i d (a) 6.5 5.6 symbol limit units v ds 20 v gs 12 t a =25c 6.5 t a =70c 5.3 i dm 20 i s 2.7 a t a =25c 2 t a =70c 1.3 t j , t stg -55 to 150 c symbol maximum units 62.5 110 notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature power dissipation a t <= 10 sec steady state r ja i d a p d w gate-source voltage product summary 20 r ds(on) (m) 32 @ v gs = 4.5v 44 @ v gs = 2.5v pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage maximum junction-to-ambient a continuous drain current a key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 0.4 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 55c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 10 a v gs = 4.5 v, i d = 4.8 a 32 v gs = 2.5 v, i d = 3.9 a 44 forward transconductance a g fs v ds = 15 v, i d = 4.8 a 8 s diode forward voltage a v sd i s = 1.4 a, v gs = 0 v 0.74 v total gate charge q g 7 gate-source charge q gs 1.2 gate-drain charge q gd 2.6 turn-on delay time t d(on) 10 rise time t r 17 turn-off delay time t d(off) 38 fall time t f 14 input capacitance c iss 439 output capacitance c oss 78 reverse transfer capacitance c rss 68 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. pf v ds = 15 v, v gs = 0 v, f = 1 mhz m r ds(on) nc v ds = 10 v, r l = 2.1 , i d = 4.8 a, v gen = 4.5 v, r gen = 6 v ds = 10 v, v gs = 4.5 v, i d = 4.8 a drain-source on-resistance a zero gate voltage drain current static ua electrical characteristics i dss dynamic b ns 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3446N product specification
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