product summary v ds (v) r ds(on) ( ) i d (a) 0.430 @ v gs = - 4.5 v - 0.72 -20 0.480 @ v gs = - 3.6 v - 0.68 0.700 @ v gs = - 2.5 v - 0.56 sot-323 sc-70 (3-leads) 1 2 3 top view g s d marking code la xx lot traceability and date code part # code yy absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds -20 v gate-source voltage v gs 12 v continuous drain current (t j = 150 c) a t a = 25 c i d - 0.72 - 0.67 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d - 0.58 - 0.54 a pulsed drain current i dm - 2.5 a continuous diode current (diode conduction) a i s - 0.28 - 0.24 maximum power dissipation a t a = 25 c p d 0.34 0.29 w maximum power dissipation a t a = 70 c p d 0.22 0.19 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 315 375 maximum junction-to-ambient a steady state r thja 360 430 c/w maximum junction-to-foot (drain) steady state r thjf 285 340 c/w notes a. surface mounted on 1? x 1? fr4 board. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification SI1303DL
SI1303DL specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.6 v gate-body leakage i gss v ds = 0 v, v gs = 12 v 100 na zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 20 v, v gs = 0 v, t j = 70 c -5 a on-state drain current a i d(on) v ds = - 5 v, v gs = - 4.5 v - 2.5 a v gs = - 4.5 v, i d = - 1 a 0.360 0.430 drain-source on-state resistance a r ds(on) v gs = - 3.6 v, i d = - 0.7 a 0.400 0.480 ds(on) v gs = - 2.5 v, i d = - 0.3 a 0.560 0.700 forward transconductance a g fs v ds = - 10 v, i d = - 1 a 1.7 s diode forward voltage a v sd i s = - 0.3 a, v gs = 0 v - 1.2 v dynamic b total gate charge q g 1.7 2.2 gate-source charge q gs v ds = - 10 v, v gs = - 4.5 v, i d = - 1 a 0.38 nc gate-drain charge q gd 0.63 turn-on delay time t d(on) 9 15 rise time t r v dd = - 10 v, r l = 10 31 45 turn-off delay time t d(off) v dd = - 10 v , r l = 10 i d - 1 a, v gen = - 4.5 v, r g = 6 12.5 20 ns fall time t f 14 20 source-drain reverse recovery time t rr i f = - 1 a, di/dt = 100 a/ s 35 55 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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