, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 uhf linear push-pull power transistor BLV62 features ? internal matching for an optimum wideband capability and high gain ? poly-silicon emitter-ballasting resistors for an optimum temperature profile ? gold metallization ensures excellent reliability. description two npn silicon planar epitaxial sections in push-pull structure, intended for use in linear television transmitters (vision or sound). the device is encapsulated in a 4-lead sqt262a2 flange envelope with 2 ceramic caps. the common emitter is connected to the flange. pinning - sot262a2 pin 1 2 3 4 5 description collector 1 collector 2 base 1 base 2 emitter quick reference data rf performance at th = 25 c in a common emitter test circuit. mode of operation c.w. class-ab f (mhz) 860 vce (v) 28 pl (w) 150 op (db) > 8.5 typ. 9.5 1c (%) > 45 typ. 50 agp (db) (note 1) < 1 typ. 0.5 note 1. assuming a 3rd order amplitude transfer characteristic, 1 db gain compression corresponds with 30% sync input/25% sync output compression in television service (negative modulation, ccir system). pin configuration 1 /"i 3 4 top view fig.1 simplified outline and symbol. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
uhf linear push-pull power transistor BLV62 limiting values (per transistor section unless otherwise specified) in accordance with the absolute maximum system (iec 134). symbol vcbo , vceo vsbo 'c> 'c(av) pm tag t, parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation storage temperature range junction operating temperature conditions open emitter open base open collector dc or average value dc operation; trt = 25 c (note 1) min. - - - - -65 - max. 60 28 3 12.5 320 150 200 unit v v v a rw "c c note 1. total device, both sections equally loaded. 50 ig (a) 10 1 total de\ tr ~ ~ ^ 70 1 v mb \i ( vce (v) /ice, both sections equally loaded. fig.2 dc soar. 100 p 350 mot (w)300 250 200 150 100 50 0 c total dev (i) contir (ii) conti (lll)shor ma3w x "v ? "^ x v, ? i. ^ -^ r s. i ^ >c -> i ^k i i - p^ ^ ;=?, l^> ,_ -?, ^ ? ? "v. 20 40 60 80 100 120 th uhf linear push-pull power transistor BLV62 thermal resistance symbol fv i-mb(dc] "lh j-mb(rf) r(h mb-h parameter from junction to mounting base from junction to mounting base from mounting base to heatsink conditions pw = 320 w; t^-25-c (note 1) pw = 350 w; trt = 25=c (note 1) (note 1) max. 0.55 0.5 0.15 unft k/w km k/w note 1. total device, both sections equally loaded. characteristics values apply to either transistor section; tj = 25 c. symbol vibricbo v uhf linear push-pull power transistor BLV62 too "fe 80 60 40 20 0 vce = 25 fig.4 mnc7j9 _>? ? - ? - ? _- ? ? * ? - ? _ "? 6 ,c(ma) ? v. dc current gain as a function of collector current, typical values. 10 'c (a) 1 0.1 ug1 c vce = 25 1 fig ba mra318 f-.-: 'h /0 t l.,.1 ~y ^ . .41.. ji ?? ? i ? rr- "^^^ ?--^-^ r/is-c ^*" -? 0.5 1 1,5 2 2.5 vbe(v) /. 6 collector current as a function of se-emitter voltage, typical values. 350 , t = i, = 0;f = 1 mhz. fig.5 collector capacitance as a function of collector-base voltage, typical values.
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