inchange semiconductor product specification silicon npn power transistors BDW83/83a/83b/83c/83d description ? with to-3pn package ? complement to type bdw84/84a/84b/84c/84d ? darlington ? high dc current gain applications ? for use in power linear and switching applications. pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit BDW83 45 BDW83a 60 BDW83b 80 BDW83c 100 v cbo collector-base voltage BDW83d open emitter 120 v BDW83 45 BDW83a 60 BDW83b 80 BDW83c 100 v ceo collector-emitter voltage BDW83d open base 120 v v ebo emitter-base voltage open collector 5 v i c collector current 15 a i b base current 0.5 a t c =25 ?? 150 p c collector power dissipation t a =25 ?? 3.5 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3pn) and symbol
inchange semiconductor product specification 2 silicon npn power transistors BDW83/83a/83b/83c/83d characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit BDW83 45 BDW83a 60 BDW83b 80 BDW83c 100 v (br)ceo collector-emitter breakdown voltage BDW83d i c =30ma, i b =0 120 v v cesat-1 collector-emitter saturation voltage i c =6a ,i b =12ma 2.5 v v cesat-2 collector-emitter saturation voltage i c =15a ,i b =150ma 4.0 v v be base-emitter on voltage i c =6a ; v ce =3v 2.5 v BDW83 v cb =45v, i e =0 t c =150 ?? 0.5 5.0 BDW83a v cb =60v, i e =0 t c =150 ?? 0.5 5.0 BDW83b v cb =80v, i e =0 t c =150 ?? 0.5 5.0 BDW83c v cb =100v, i e =0 t c =150 ?? 0.5 5.0 i cbo collector cut-off current BDW83d v cb =120v, i e =0 t c =150 ?? 0.5 5.0 ma BDW83 v ce =30v, i b =0 BDW83a v ce =30v, i b =0 BDW83b v ce =40v, i b =0 BDW83c v ce =50v, i b =0 i ceo collector cut-off current BDW83d v ce =60v, i b =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe-1 dc current gain i c =6a ; v ce =3v 750 20000 h fe-2 dc current gain i c =15a ; v ce =3v 100 v ec diode forward voltage i e =15a 3.5 v t on turn-on time 0.9 | s t off turn-off time i c = 10 a, i b1 =-i b2 =40 ma r l =3 |? ; v be(off) = -4.2v duty cycle ? 2% 7.0 | s thermal characteristics symbol parameter max unit r th j-c thermal resistance junction to case 0.83 ?? /w
inchange semiconductor product specification 3 silicon npn power transistors BDW83/83a/83b/83c/83d package outline fig.2 outline dimensions(unindicated tolerance: ? 0.1mm)
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