page:p2-p1 plastic-encapsulate diodes schottky barrier diode features for use in low voltage, high frequency inverters free wheeling, and polarity protection applications. marking: sj maximum ratings (ta=25 unless otherwise noted) parameter symbol value units non-repetitive peak reverse voltage 20 v peak repetitive peak reverse voltage 20 v working peak reverse voltage 20 v dc blocking 20 v rms reverse voltage 14 v average rectified output current 1 a peak forward surge current @=8.3ms 9 a repetitive peak forward current 1.5 a power dissipation 500 mw thermal resistance junction to ambient 250 /w storage temperature -65~+150 electrical characteristics (tamb=25 unless otherwise specified) reverse breakdown voltage v (br) i = 1ma 20 v reverse voltage leakage current i r v = 20v 1 ma forward voltage v f i =1a i =3a 0.45 0.75 v v diode capacitance c d v r =4v, f=1mhz 120 pf sod-123 - + parameter symbol test conditions min max unit v rm v rrm v rwm v r r(rms) i o i fsm i frm pd r ja t stg r r f f B5817W mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
page:p2-p2 plastic-encapsulate diodes typical characteristics B5817W mako semiconductor co., limited 4008-378-873 http://www.makosemi.hk/ m a k o s e m i c o n d u c t o r c o . , l i m i t e d 4 0 0 8 - 3 7 8 - 8 7 3 h t t p : / / w w w . m a k o s e m i . h k /
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