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  1. general description the tjf1052i is a high-speed can transceiv er that provides a galvanically isolated interface between a controller area network (can) protocol controller and the physical two-wire can bus. the tjf1052i is specifically targeted at industria l applications, where galvanic isolation barriers are needed bet ween the high- and low-voltage parts. safety: isolation is required for sa fety reasons, eg. to protect humans from electric shock or to prevent the electronics being damaged by high voltages. signal integrity: the isolator uses proprietary capaciti ve isolation techno logy to transmit and receive can signals. this technology enables more reliable data communications in noisy environments, such as electric pum ps, elevators or industrial equipment. performance: the transceiver is designed for high-speed (up to 1 mbit/s) can applications, supply ing the differential tr ansmit and receive capability to a can protocol controller in a microcontroller. integrating the galvanic isolation along with the transceiver in the tjf1052i remove s the need for sta nd-alone isolation. it also improves reliability and system performance parameters such as loop delay. the tjf1052i belongs to the third generation of high-speed can transceivers from nxp semiconductors, offering significant improv ements over first- and second-generation devices. it offers improv ed electromagnetic compatib ility (emc) and electrostatic discharge (esd) performance, and also featur es ideal passive behavior to the can bus when the transceiver supply voltage is off. the tjf1052i is an excellent choice for a ll types of industrial can networks where isolation is required for safety reasons or to enhance signal integrity in noisy environments. 2. features and benefits 2.1 general ? isolator and transceiver integrated into a single so16 package, reducing board space ? flawless cooperation between the isolator and the transceiver ? fewer components improves reliability in applications ? guaranteed performance (eg. max loop delay <220 ns) ? electrical transient immunity of 45 kv/ ? s (typ) ? iso 11898-2 compliant ? suitable for use in 12 v and 24 v systems; compatible with 3 v to 5 v microcontrollers ? bus common mode voltage (v cm ) = ? 25 v ? low electromagnetic emission (eme) and high electromagnetic immunity (emi) tjf1052i galvanically isolated hi gh-speed can transceiver rev. 1 ? 10 july 2013 product data sheet can
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 2 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 2.2 power management ? functional behavior predictable under all supply conditions ? transceiver disengages from the bus when not powered up (zero load) 2.3 protection ? up to 5 kv (rms) rated isolation ? three versions available (1 kv, 2.5 kv and 5 kv) ? voltage compliant with ul 1577 (pending), iec 61010 and iec 60950 ? 5 kv (rms) rated isolation voltage complia nt with ul 1577, iec 61010 and iec 60950 ? high esd handling capability on the bus pins ? transmit data (txd) dominant time-out function ? undervoltage detection on supply pins 3. quick reference data 4. ordering information table 1. quick reference data symbol parameter conditions min typ max unit i dd1 supply current 1 v txd = 0 v; bus dominant - - 2.6 ma v txd =v dd1 ; bus recessive - - 5.6 ma i dd2 supply current 2 v txd = 0 v; bus dominant; 60 ? load - - 70 ma v txd =v dd1 ; bus recessive - - 10 ma v uvd(swoff)(vdd2) switch-off undervoltage detection voltage on pin v dd2 1.3 - 2.7 v v esd electrostatic discharge voltage iec 61000-4-2 at pins canh and canl ? 8- +8 kv v canh voltage on pin canh no time limit; dc limiting value ? 58 - +58 v v canl voltage on pin canl no time limit; dc limiting value ? 58 - +58 v t vj virtual junction temperature ? 40 - +125 ?c t amb ambient temperature ? 40 - +105 ?c table 2. ordering information type number package name description version TJF1052IT/5 TJF1052IT/2 TJF1052IT/1 so16 plastic small outline package; 16 leads; body width 7.5 mm sot162-1 table 3. voltage ratings type number rated insulation voltage according to ul 1577, iec 61010 and iec 60950 TJF1052IT/5 5 kv (rms) TJF1052IT/2 2.5 kv (rms) TJF1052IT/1 1 kv (rms)
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 3 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 5. block diagram fig 1. block diagram mux and driver temperature protection time-out slope control and driver v dd2 canh canl 13 12 v dd1 1 2, 7, 8 gnd1 tjf1052i wake-up filter 015aaa386 v dd2 11, 16 9, 10, 15 gnd2 txd 3 rxd 5 mode control 14 stb isolation barrier
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 4 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 6. pinning information 6.1 pinning 6.2 pin description [1] all gnd1 pins (pins 2, 7 and 8) should be connected together and to gr ound domain 1. all gnd2 pins (pins 9, 10 and 15) should be connected together and to ground domain 2. refer to the application notes for further information. [2] setting stb high disables the can bus connection. fig 2. pin configuration diagram tjf1052i v dd1 v dd2 gnd1 gnd2 txd stb n.c. canh rxd canl n.c. v dd2 gnd1 gnd2 gnd1 gnd2 015aaa387 1 2 3 4 5 6 7 8 10 9 12 11 14 13 16 15 table 4. pin description symbol pin description v dd1 1 supply voltage 1 gnd1 2 ground supply 1 [1] txd 3 transmit data input n/c 4 not connected rxd 5 receive data output; reads out data from the bus lines n/c 6 not connected gnd1 7 ground supply 1 [1] gnd1 8 ground supply 1 [1] gnd2 9 ground supply 2 [1] gnd2 10 ground supply 2 [1] v dd2 11 supply voltage 2 canl 12 low-level can bus line canh 13 high-level can bus line stb 14 standby mode control input [2] gnd2 15 ground supply 2 [1] v dd2 16 supply voltage 2
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 5 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 7. functional description 7.1 operation 7.1.1 normal mode during normal operation, the tjf1052i transceiver transmits and receives data via bus lines canh and canl (see figure 1 for the block diagram). the differential receiver converts the analog data on the bus lines into digital data, which is output on pin rxd. the slope of the output signals on the bus lines is controlled and optimized in a way that guarantees the lowest possible eme. the isolator used in the tjf1052i is an ac device that employs on-off keying to guarantee the dc output state at all times. the states of txd, rxd and the can bus at start-up, shut-down and during normal operation are described in ta b l e 5 . care should be taken regarding power sequenci ng if the device is used in networks that support remote wake-up (see section 12 ? application information ? ). 7.1.2 standby mode standby mode is provided to improve the response of the tjf1052i to an undervoltage on v dd2 . the microcontroller cannot switch the tr ansceiver directly to standby mode. the tjf1052i switches to standby mode during v dd2 power-up and power-down. see section 7.2.2 for a description of undervoltage protection on v dd2 . 7.2 fail-safe features 7.2.1 txd dominant time-out function a ?txd dominant time-out? timer is started when pin txd goes low. if the low state on txd persists for longer than t to(dom)txd , the transmitter is disabled, releasing the bus lines to recessive state. this function prevents a hardware and/or softwa re application failure from driving the bus lines to a permanent dominant state (blocking all network communications). the txd dominant time-out timer is reset by a positive edge on txd. the txd dominant time-out time also defines the minimum possible bit rate of 40 kbit/s. 7.2.2 undervoltage protection: v dd2 if the voltage on pin v dd2 falls below the standby threshold, v uvd(stb)(vdd2) , the transceiver switches to standby mode. in standby mode, the transceiver is not able to transmit or receive data on the bus lines. the transmitter and the normal mode receiver are switched off and the bus lines are biased to ground to minimize the supply current. the tjf1052i table 5. input/output states at start-up, shut-down and during normal operation txd rxd v dd1 v dd2 can comments hh>v uvd(vdd1) >v uvd(stb)vdd2) recessive normal mode operation ll>v uvd(vdd1) >v uvd(stb)vdd2) dominant normal mode with txd dominant time-out active x x unpowered >v uvd(stb)vdd2) dominant dominant after v dd1 power loss until txd dominant timeout; recessive while v dd2 is ramping up from an unpowered state xl>v uvd(vdd1) unpowered disconnected rxd transitions l-to-h when v dd2 restored
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 6 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver will remain in sta ndby mode until v dd2 rises above v uvd(stb)(vdd2) (max). the low-power receiver continues to monitor the bus while the tjf1052i is in standby mode. data on the bus is still reflected onto rxd, bu t the transfer speed is reduced. if the voltage on v dd2 falls below the swit ch-off threshold, v uvd(swoff)(vdd2) , the transceiver switches off and disengages from the bus (zero load). it is guaranteed to switch on again in standby mode when v dd2 rises above v uvd(swoff)(vdd2) (max). 7.2.3 undervoltage protection: v dd1 if the voltage on pin v dd1 falls below the undervoltage detection threshold, v uvd(vdd1) , the can bus switches to dominant state and the txd dominant ti meout timer is started. rxd will not go high again until the supply voltage has been restored on v dd1 (v dd1 > v uvd(vdd1) ). 7.2.4 overtemperature protection the output drivers are protected against overte mperature conditions. if the virtual junction temperature exceeds the shutdo wn junction temperature, t j(sd) , the output drivers are disabled. they are enabled again when the virtual junction temperature falls below t j(sd) and txd is high. including the txd condition ensures that output driver oscillation due to temperature drift is avoided. 7.3 insulation characteristics and safety-related specifications [1] based on the measured data in the package outline. d l(io1) is the clearance distance. note that the clearance distance cannot be larger than the creepage distance (d l(io2) ). [2] based on the measured data in the package outline. d l(io2) is the creepage distance. according to iec 60950-1, normative annex f (also iec60664 chapter 6.2, example 11), the effective minimum ex ternal tracking is 1.0 mm less due to the presence of an inter vening, unconnected conductive part. [3] guaranteed by design. table 6. isolator characteristics symbol parameter conditions min typ max unit d l(io1) minimum air gap [1] 8.6 - - mm d l(io2) minimum external tracking [2] 8.1 - - mm r ins insulation resistance v io = 500 v at t a = 125 ?c [3] 100 - - g ? v io = 500 v at t a = 150 ?c [3] 10 - - g ? - pollution degree - 2 - - - - material group (iec 60664) 2 - - -
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 7 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver [1] the working voltage is the input-to-output voltage t hat can be applied without time limit. which tjf1052i variant should be selected depends on the overvoltage category and the related insulation voltage. [2] ul stress test is performed at higher than iec-specified levels. [3] based on transient overvoltages as indicated in iec60664 ; creepage and clearance distances not taken into account. [4] reinforced insulation should have an impulse withstand voltage one step higher than that specified for basic insulation. table 7. working voltages and isolation insulation characteristics parameter standard tjf1052i/1 tjf1052i/2 tjf1052i/5 max. working insulation voltage per iec 60664 (v iorm ) [1] iec 60664 300 v rms 450 v rms 800 v rms 420 v peak 630 v peak 1125 v peak max. transient overvoltage per iec 60664 (v iotm ) [2] t test =1.2/50 ? s (certification) iec 60664 2500 v peak 4000 v peak 6000 v peak rated insulation voltage per ul 1577 (v iso ) ul 1577 t test = 60 s (qualification) 1000 v rms 2500 v rms 5000 v rms t test = 1 s (production) 1200 v rms 3000 v rms 6000 v rms insulation classification in terms of overvoltage category [3] insulation type max. working voltage tjf1052i/1 tjf1052i/2 tjf1052i/5 basic insulation [4] ? 150 v rms i - iii i - iv i - iv ? 300 v rms i - ii i - iii i - iv ? 600 v rms i i - ii i - iii ? 1000 v rms --i - i i reinforced insulation [4] ? 150 v rms i - ii i - iii i - iv ? 300 v rms i i - ii i - iii ? 600 v rms - i i - ii ? 1000 v rms --i table 8. safety approvals standard file number iec 60950 cb nl-25981 iec 61010-1 2nd edition cb nl-25982 ul1577 compliancy check pending
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 8 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 8. limiting values [1] referenced to gnd1. [2] iec 61000-4-2 (150 pf, 330 ? ); direct coupling. [3] esd performance of pins canh and canl according to iec 61000-4-2 (150 pf, 330 ? ) has been verified by an external test house. the result is equal to or better than ? 8 kv (unaided). [4] human body model (hbm): according to ansi/esda/jedec js-001. [5] ? 8 kv to gnd2 and v dd2 ; ? 6 kv to gnd1. [6] machine model (mm): according to jesd22-a115. [7] charged device model (cdm): according to jesd22-c101. [8] an alternative definition of vi rtual junction temperature is: t vj =t amb +p? r th(vj-a) , where r th(vj-a) is a fixed value used in the calculation of t vj . the rating for t vj limits the allowable combinations of power dissipation (p) and ambient temperature (t amb ). 9. thermal characteristics table 9. limiting values in accordance with the absolute maximum rating system (i ec 60134). all voltages and currents are referenced to gnd2 unless otherwise specified. symbol parameter conditions min max unit v canh voltage on pin canh no time limit; dc value ? 58 +58 v v canl voltage on pin canl no time limit; dc value ? 58 +58 v v dd1 supply voltage 1 [1] ? 0.3 +6.0 v v dd2 supply voltage 2 ? 0.3 +6.0 v v i input voltage on pin txd [1] ? 0.3 v dd1 +0.3 v v o output voltage on pin rxd [1] ? 0.3 v dd1 +0.3 v i o output current on pin rxd [1] -10 ma v trt transient voltage on pins canh and canl ? 150 +100 v v esd electrostatic discharge voltage iec 61000-4-2 [2] at pins canh and canl [3] ? 8+8 kv hbm [4] at pins canh and canl [5] ? 8+8 kv at any other pin ? 4+4 kv mm [6] at any pin ? 300 +300 v cdm [7] at corner pins ? 750 +750 v at any pin ? 500 +500 v t vj virtual junction temperature [8] ? 40 +125 ?c t amb ambient temperature ? 40 +105 ?c t stg storage temperature ? 65 +150 ?c table 10. thermal characteristics according to iec 60747-1. symbol parameter conditions value unit r th(vj-a) thermal resistance from virtual junction to ambient in free air 100 k/w
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 9 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 10. static characteristics table 11. static characteristics t vj = ? 40 ? c to +125 ? c; v dd1 = 3.0 v to 5.25 v; v dd2 = 4.75 v to 5.25 v unless otherwise sp ecified. positive currents flow into the ic. all voltages and currents are referenced to gnd2 unless otherwise specified. symbol parameter conditions min typ max unit dc supplies; pin v dd1 and v dd2 i dd1 supply current 1 v dd1 = 3 v to 5 v; v dd2 =5 v; v txd = 0 v; bus dominant [1] --2.6ma v dd1 = 3 v to 5 v; v dd2 =5 v; v txd =v dd1 ; bus recessive [1] --5.6ma i dd2 supply current 2 v dd1 = 3 v to 5 v; v dd2 =5 v; v txd = 0 v; bus dominant; r l =60 ? --70ma v dd1 = 3 v to 5 v; v dd2 =5 v; v txd =v dd1 ; bus recessive --10ma v uvd(stb)(vdd2) standby undervoltage detection voltage on pin v dd2 3.5 - 4.75 v v uvd(swoff)(vdd2) switch-off undervoltage detection voltage on pin v dd2 1.3 - 2.7 v v uvd(vdd1) undervoltage detection voltage on pin v dd1 [1] 1.3 - 2.7 v v uvhys undervoltage hysteresis voltage on pin v dd1 [1] 40 - 100 mv on pin v dd2 80 - 200 mv can transmit data input; pin txd v ih high-level input voltage 2.0 - v dd1 v v il low-level input voltage 0 - 0.8 v i li input leakage current ? 10 - +10 ? a can receive data output; pin rxd v oh high-level output voltage i oh = ? 4ma v dd1 ? 0.4 -- v v ol low-level output voltage i ol =4ma - - 0.4 v standby mode control input; pin stb v ih high-level input voltage 0.7v cc -v cc + 0.3 v v il low-level input voltage ? 0.3 - 0.3v cc v i ih high-level input current v stb =v cc ? 1- +1 ? a i il low-level input current v stb =0v ? 15 - ? 1 ? a bus lines; pins canh and canl v o(dom) dominant output voltage v txd =0v; t tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 10 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver [1] referenced to gnd1. [2] v cm(can) is the common mode voltage of canh and canl. [3] standby mode entered when v dd2 falls below v uvd(stb)(vdd2) . [4] guaranteed by design. [5] rxd is low during thermal shutdown. v o(dif)bus bus differential output voltage v txd =0v; t tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 11 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 11. dynamic characteristics [1] see figure 5 . [2] the start-up time is the time from the application of power to valid data at the output. guaranteed by design. table 12. dynamic characteristics t vj = ? 40 ? c to +125 ? c; v dd1 = 3.0 v to 5.25 v; v dd2 = 4.75 v to 5.25 v unless specified otherwise symbol parameter conditions min typ max unit transceiver timing; pins c anh, canl, txd and rxd; see figure 3 t d(txd-busdom) delay time from txd to bus dominant normal mode - 72 120 ns t d(txd-busrec) delay time from txd to bus recessive normal mode - 97 120 ns t d(busdom-rxd) delay time from bus dominant to rxd normal mode - 67 130 ns t d(busrec-rxd) delay time from bus recessive to rxd normal mode - 72 130 ns t pd(txd-rxd) propagation delay from txd to rxd normal mode 72 - 220 ns t to(dom)txd txd dominant time-out time v txd = 0 v; normal mode 0.3 1.7 5 ms f data data rate 0.04 - 1.0 mbps cmti common-mode transient immunity v i =v dd1 or v i =0 v [1] 20 45 - kv/ ? s t startup start-up time [2] -- 500 ? s fig 3. can transceiver timing diagram canh canl t d(txd-busdom) txd v o(dif)(bus) rxd high high low low dominant recessive 0.9 v 0.5 v 0.3v io 0.7v io t d(busdom-rxd) t d(txd-busrec) t d(busrec-rxd) t pd(txd-rxd) t pd(txd-rxd) 015aaa169
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 12 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 12. application information isolated can applications are becoming more and more common in industrial automation processes. the tjf1052i is the ideal soluti on for use in devicenet networks or in applications that require an isolated can nod e. the device can also be used to isolate high-voltage on-demand pumps and motors in belt elimination projects. if the tjf1052i is used in a hs-can networ k that supports remote bus wake-up, the power-down sequence of the supplies must be managed properly to avoid a dominant pulse on the can bus. v dd2 should pass the minimum undervoltage threshold (v uvd(stb)(vdd2)(min) ) before v dd1 falls below its maximum undervoltage detection threshold (v uvd(vdd1)(max) ). power-up sequencing can happen in any order. digital inputs and outputs are 3 v compliant, allowing the tjf1052i to interface directly with 3 v and 5 v microcontrollers. fig 4. typical application with tjf1052i and a 5 v microcontroller. rxd micro- controller tx0 rx0 txd v dd gnd canh canh canl canl 5 v 015aaa388 5 v bat v dd2 gnd2 gnd1 v dd1 isolated supply stb tjf1052i
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 13 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 13. test information fig 5. cmti test setup %$7 9 9'' 9'' *1' /&ilowhu /&ilowhu vxsso\  648$5( :$9( *(1(5$725  9'' *1' 7;' qf 5;' qf qf qf *1' *1' 9'' &$1+ &$1/ 67% *1' 9'' *1'                7(67%2$5' 7-), 38/6( *(1(5$725 6&23( ddd fig 6. timing test circuit for can transceiver 015aaa389 tjf1052i gnd1 v dd1 100 nf 47 f +5 v txd rxd 15 pf canl canh r l 100 pf v dd2 stb gnd2
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 14 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver fig 7. life expectancy as a function of working voltage 010aaa839 0 250 500 750 1000 10 10 2 10 3 life expectancy (years) (v (v rms rms ) (v rms ) working voltage
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 15 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 14. package outline fig 8. package outline sot162-1 (so16) unit a max. a 1 a 2 a 3 b p cd (1) e (1) (1) eh e ll p q z ywv references outline version european projection issue date iec jedec jeita mm inches 2.65 0.3 0.1 2.45 2.25 0.49 0.36 0.32 0.23 10.5 10.1 7.6 7.4 1.27 10.65 10.00 1.1 1.0 0.9 0.4 8 0 o o 0.25 0.1 dimensions (inch dimensions are derived from the original mm dimensions) note 1. plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included. 1.1 0.4 sot162-1 8 16 w m b p d detail x z e 9 1 y 0.25 075e03 ms-013 pin 1 index 0.1 0.012 0.004 0.096 0.089 0.019 0.014 0.013 0.009 0.41 0.40 0.30 0.29 0.05 1.4 0.055 0.419 0.394 0.043 0.039 0.035 0.016 0.01 0.25 0.01 0.004 0.043 0.016 0.01 x a a 1 a 2 h e l p q e c l v m a (a ) 3 a 0 5 10 mm scale so16: plastic small outline package; 16 leads; body width 7.5 mm sot162-1 99-12-27 03-02-19
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 16 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 15. handling information all input and output pins are protected ag ainst electrostatic discharge (esd) under normal handling. when handling ensure that the appropriate precautions are taken as described in jesd625-a or equivalent standards. 16. soldering of smd packages this text provides a very brief insight into a complex technology. a more in-depth account of soldering ics can be found in application note an10365 ?surface mount reflow soldering description? . 16.1 introduction to soldering soldering is one of the most common methods through which packages are attached to printed circuit boards (pcbs), to form electr ical circuits. the soldered joint provides both the mechanical and the electrical connection. th ere is no single sold ering method that is ideal for all ic packages. wave soldering is often preferred when through-hole and surface mount devices (smds) are mixed on one printed wiring board; however, it is not suitable for fine pitch smds. reflow soldering is ideal for the small pitches and high densities that come with increased miniaturization. 16.2 wave and reflow soldering wave soldering is a joining technology in which the joints are made by solder coming from a standing wave of liquid solder. the wave soldering process is suitable for the following: ? through-hole components ? leaded or leadless smds, which are glued to the surface of the printed circuit board not all smds can be wave soldered. packages with solder balls, and some leadless packages which have solder lands underneath the body, cannot be wave soldered. also, leaded smds with leads having a pitch smaller than ~0.6 mm cannot be wave soldered, due to an increased pr obability of bridging. the reflow soldering process involves applying solder paste to a board, followed by component placement and exposure to a temperature profile. leaded packages, packages with solder balls, and leadless packages are all reflow solderable. key characteristics in both wave and reflow soldering are: ? board specifications, in cluding the board finish , solder masks and vias ? package footprints, including solder thieves and orientation ? the moisture sensitivit y level of the packages ? package placement ? inspection and repair ? lead-free soldering versus snpb soldering 16.3 wave soldering key characteristics in wave soldering are:
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 17 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver ? process issues, such as application of adhe sive and flux, clinching of leads, board transport, the solder wave parameters, and the time during which components are exposed to the wave ? solder bath specifications, including temperature and impurities 16.4 reflow soldering key characteristics in reflow soldering are: ? lead-free versus snpb solderi ng; note that a lead-free reflow process usually leads to higher minimum peak temperatures (see figure 9 ) than a snpb process, thus reducing the process window ? solder paste printing issues including smearing, release, and adjusting the process window for a mix of large and small components on one board ? reflow temperature profile; this profile includ es preheat, reflow (in which the board is heated to the peak temperature) and cooling down. it is imperative that the peak temperature is high enough for the solder to make reliable solder joints (a solder paste characteristic). in addition, the peak temperature must be low enough that the packages and/or boards are not damaged. the peak temperature of the package depends on package thickness and volume and is classified in accordance with ta b l e 1 3 and 14 moisture sensitivity precautions, as indicat ed on the packing, must be respected at all times. studies have shown that small packages reach higher temperatures during reflow soldering, see figure 9 . table 13. snpb eutectic process (from j-std-020d) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 ? 350 < 2.5 235 220 ? 2.5 220 220 table 14. lead-free process (from j-std-020d) package thickness (mm) package reflow temperature ( ?c) volume (mm 3 ) < 350 350 to 2000 > 2000 < 1.6 260 260 260 1.6 to 2.5 260 250 245 > 2.5 250 245 245
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 18 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver for further information on temperature profiles, refer to application note an10365 ?surface mount reflow soldering description? . 17. revision history msl: moisture sensitivity level fig 9. temperature profiles for large and small components 001aac844 temperature time minimum peak temperature = minimum soldering temperature maximum peak temperature = msl limit, damage level peak temperature table 15. revision history document id release date data sheet status change notice supersedes tjf1052i v.1 20130710 product data sheet - -
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 19 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver 18. legal information 18.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 18.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. product specification ? the information and data provided in a product data sheet shall define the specification of the product as agreed between nxp semiconductors and its customer , unless nxp semiconductors and customer have explicitly agreed otherwis e in writing. in no event however, shall an agreement be valid in which the nxp semiconductors product is deemed to offer functions and qualities beyond those described in the product data sheet. 18.3 disclaimers limited warranty and liability ? information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such info rmation. nxp semiconductors takes no responsibility for the content in this document if provided by an information source outside of nxp semiconductors. in no event shall nxp semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. notwithstanding any damages that customer might incur for any reason whatsoever, nxp semiconductors? aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the terms and conditions of commercial sale of nxp semiconductors. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors and its suppliers accept no liability for inclusion and/or use of nxp semiconducto rs products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. customers are responsible for the design and operation of their applications and products using nxp semiconductors products, and nxp semiconductors accepts no liability for any assistance with applications or customer product design. it is customer?s sole responsibility to determine whether the nxp semiconductors product is suitable and fit for the customer?s applications and products planned, as well as fo r the planned application and use of customer?s third party customer(s). customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. nxp semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer?s applications or products, or the application or use by customer?s third party customer(s). customer is responsible for doing all necessary testing for the customer?s applic ations and products using nxp semiconductors products in order to av oid a default of the applications and the products or of the application or use by customer?s third party customer(s). nxp does not accept any liability in this respect. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) will cause permanent damage to the device. limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the recommended operating conditions section (if present) or the characteristics sections of this document is not warranted. constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , unless otherwise agreed in a valid written individual agreement. in case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. nxp semiconductors hereby expressly objects to applying the customer?s general terms and conditions with regard to the purchase of nxp semiconducto rs products by customer. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this document contains the product specification.
tjf1052i all information provided in this document is subject to legal disclaimers. ? nxp b.v. 2013. all rights reserved. product data sheet rev. 1 ? 10 july 2013 20 of 21 nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver export control ? this document as well as the item(s) described herein may be subject to export control regu lations. export might require a prior authorization from competent authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comple te, exhaustive or legally binding. non-automotive qualified products ? unless this data sheet expressly states that this specific nxp semicon ductors product is automotive qualified, the product is not suitable for automotive use. it is neither qualified nor tested in accordance with automotive testing or application requirements. nxp semiconductors accepts no liabili ty for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. in the event that customer uses t he product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without nxp semiconductors? warranty of the product for such automotive applicat ions, use and specifications, and (b) whenever customer uses the product for automotive applications beyond nxp semiconductors? specifications such use shall be solely at customer?s own risk, and (c) customer fully indemnifies nxp semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive app lications beyond nxp semiconductors? standard warranty and nxp semiconduct ors? product specifications. 18.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. devicenet ? is a trademark of the open devicenet vendor association. 19. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors tjf1052i galvanically isolated high-speed can transceiver ? nxp b.v. 2013. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 10 july 2013 document identifier: tjf1052i please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 20. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features and benefits . . . . . . . . . . . . . . . . . . . . 1 2.1 general . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2.2 power management . . . . . . . . . . . . . . . . . . . . . 2 2.3 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 3 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 4 ordering information . . . . . . . . . . . . . . . . . . . . . 2 5 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 4 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4 7 functional description . . . . . . . . . . . . . . . . . . . 5 7.1 operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.1 normal mode . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.1.2 standby mode. . . . . . . . . . . . . . . . . . . . . . . . . . 5 7.2 fail-safe features . . . . . . . . . . . . . . . . . . . . . . . 5 7.2.1 txd dominant time-out function . . . . . . . . . . . . 5 7.2.2 undervoltag e protection: v dd2 . . . . . . . . . . . . . 5 7.2.3 undervoltag e protection: v dd1 . . . . . . . . . . . . . 6 7.2.4 overtemperat ure protection . . . . . . . . . . . . . . . 6 7.3 insulation characteristics and safety-related specifications . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 thermal characteristics . . . . . . . . . . . . . . . . . . 8 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 9 11 dynamic characteristics . . . . . . . . . . . . . . . . . 11 12 application information. . . . . . . . . . . . . . . . . . 12 13 test information . . . . . . . . . . . . . . . . . . . . . . . . 13 14 package outline . . . . . . . . . . . . . . . . . . . . . . . . 15 15 handling information. . . . . . . . . . . . . . . . . . . . 16 16 soldering of smd packages . . . . . . . . . . . . . . 16 16.1 introduction to soldering . . . . . . . . . . . . . . . . . 16 16.2 wave and reflow soldering . . . . . . . . . . . . . . . 16 16.3 wave soldering . . . . . . . . . . . . . . . . . . . . . . . . 16 16.4 reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 17 17 revision history . . . . . . . . . . . . . . . . . . . . . . . . 18 18 legal information. . . . . . . . . . . . . . . . . . . . . . . 19 18.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 19 18.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 18.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 18.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 20 19 contact information. . . . . . . . . . . . . . . . . . . . . 20 20 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21


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