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triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 1 january 2013 ? rev a 13 - 17 ghz 2 watt, 32db power amplifier key features and performance ? 33 dbm midband pout ? 32 db nominal gain ? 10 db typical return loss ? built-in directional power detector with reference ? 0. 50 m phemt technology ? bias conditions: 7 v, 680ma ? chip dimensions: 2.5 x 1.4 x 0.1 mm (98 x 55 x 4 mils) preliminary measured data bias conditions: vd=7 v id= 680ma primary applications ? vsat ? point-to-point note: datasheet is subject to change without notice.
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 2 january 2013 ? rev a symbol parameter value notes vd-vg drain to gate voltage 13 v vd drain voltage 8 v 2 / vg gate voltage range -5 to 0 v id drain current 1300 ma 2 / ig gate current range -18 to 18 ma pin input continuous wave power 21 dbm 2 / tchannel channel temperature 200 c table i absolute maximum ratings 1 / 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause perma nent damage to the device and/or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter value vd drain voltage 7 v idq drain current 680 ma id_drive drain current under rf drive 1200 ma vg gate voltage -0.6 v table ii recommended operating conditions
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 3 january 2013 ? rev a table iii rf characterization table (t a = 25 c, nominal) (vd = 7 v, id = 680 ma 5%) limits symbol parameter test condition min typ max units gain small signal gain f = 13-17 32 db irl input return loss f = 13-17 10 db orl output return loss f = 13-17 10 db pwr output power @ pin = +5 dbm f = 13-17 33 dbm note: table iii lists the rf characterist ics of typical devices as determined by fixtured measurements.
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 4 january 2013 ? rev a table iv power dissipation and thermal properties parameter test conditions value maximum power dissipation tbaseplate = 70 c pd = 9.2 w tchannel = 200 c thermal resistance, jc vd = 7 v id = 680 ma pd = 4.76 w tbaseplate = 70 c jc = 14.2 c/w tchannel = 138 c tm = 2.9e+6 hrs thermal resistance, jc under rf drive vd = 7 v id = 1200 ma pout = 33 dbm pd = 6.4 w tbaseplate = 70 c jc = 14.2 c/w tchannel = 161 c tm = 4.1e+5 hrs mounting temperature 30 seconds 320 c storage temperature -65 to 150 c median lifetime (tm) vs. channel temperature
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 5 january 2013 ? rev a typical fixtured performance
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 6 january 2013 ? rev a typical fixtured performance
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 7 january 2013 ? rev a typical fixtured performance
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 8 january 2013 ? rev a typical fixtured performance
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 9 january 2013 ? rev a mechanical drawing
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 10 january 2013 ? rev a power detector 40 k 40 k +5 v vdet vref 50 rf out dut 5pf mmic external
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 11 january 2013 ? rev a chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. 100 pf vg input tfn output tfn 100 pf vd off chip r=10 off chip c=0.1 f off chip r=10 off chip c=0.1 f
triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com TGA2503 12 january 2013 ? rev a gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. assembly process notes reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. ordering information part package style TGA2503 gaas mmic die

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