1 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? 0.5 um phemt technology ? >25 db nominal gain ? >36 dbm nominal psat ? 44 dbm nominal ip3 @ 14 ghz ? bias 7v @ 1.3a idq, 2.1a under rf drive ? chip dimensions 2.5mm x 2.7mm x 0.1 mm primary applications ? ku-band vsat transmit fixtured measured performance chip dimensions 2.5 mm x 2.7 mm x 0.1 mm bias conditions: vd = 7v, idq = 1.3a 13 - 15 ghz 4w power amplifier datasheet subject to change without notice tga2502 may 2009 ? rev -
2 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings 1 / symbol parameter value notes v + positive supply voltage 8v i + positive supply current 2.3 a 2 / p d power dissipation 18.4 p in input continuous wave power 24 dbm t ch operating channel temperature 200 c 3 /, 4/ mounting temperature (30 seconds) 320 c t stg storage temperature -65 c to 150 c 1/ these values represent the maximum operable values of this device 2 / total current for the entire mmic 3 / these ratings apply to each individual fet 4 / junction operating temperature will directly affect the device mean time to failure (tm). for maximum life it is recommended that junction temperatures be maintained at the lowest possible levels .
3 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii electrical characteristics (ta = 25 o c 5 o c ) parameter typical units drain operating voltage 7 v quiescent current 1.3 a small signal gain 25 db gain flatness (freq=13.5 ? 15 ghz) 0.1 db/100mhz input return loss (linear small signal) 16 db output return loss (linear small signal) 16 db reverse isolation <-50 db cw output power @ psat at 14.5ghz 36 dbm power add efficiency @ psat 30 % p1db temperature coeff. tc (-40 to + 70 0 c) -0.01 db/ 0 c
4 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table iv thermal information parameter test conditions t ch (c) jc (c/w) t m (hrs) jc thermal resistance (channel to case) vd = 7 v id = 1.3 a pdiss = 9.1 w 123 5.8 1.2e+7 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 o c baseplate temperature. worst case condition with no rf applied, 100% of dc power is dissipated. median lifetime (tm) vs. channel temperature
5 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data
6 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data
7 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured fixtured data
8 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com ? ausn vacuum re-flow assembly note: chip & assembly diagram vd vd vg 1 rf in rf out
9 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test.
10 tga2502 may 2009 ? rev - triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 0 c (30 seconds max). ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 0 c.
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