, one. 20 stern ave. springfield, new jersey 07081 u.s.a. D41E series -30 --80 volts -2 amp, 8 watts telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pnp power transistors complementary to the d40e series features: ? high free-air power dissipation ? pnp complement to d40e npn ? low collector saturation voltage (0.5v typ. @ 1.0a lc) ? excellent linearity ? fast switching case style to-202 dimensions are in inches and (millimeters) type to-202 term 1 emitter term 2 base tepm 3 collector tab collector maximum ratings (ta = 25 c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peakd) base current ? continuous total power dissipation @ ta = 25c @tc = 25c operating and storage junction temperature range symbol vceo vces vebo lc 'cm ib pd tj,tstg D41E1 -30 -45 -5 -2 -3 -1 1.33 8 -55 to +150 041 e5 -60 -70 -5 -2 -3 -1 1.33 8 -55 to +150 D41E7 -80 -90 -5 -2 -3 -1 1.33 8 -55 to +150 units volts volts volts a a watts c thermal characteristics thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature for soldering purposes: 1/e" from case for 5 seconds rgja rftjc tl 75 15.6 +260 75 15.6 +260 75 15.6 +260 c/w c/w c (1) pulse test pulse width = 300ms duty cycle < 2%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25 c) (unless otherwise specified) i characteristic | symbol " min typ max unit off characteristics*1' collector-emitter sustaining voltage D41E1 (lc = 10ma) D41E5 D41E7 collector cutoff current (vce = rated vces) emitter cutoff current (veb = 5v) vceo(sus) ices iebo -30 -60 -80 ? ? ? ? ? ? -0.1 -0.1 volts 0a /*a second breakdown | second breakdown with base forward biased fbsoa see figure 1 on characteristics dc current gain (lc = -100ma, vce = -2v) (ic = -1a,vce = -2v) collector-emitter saturation voltage (ic = -1.0a, ib = -0.1 a) base-emitter saturation voltage (lc= 1.0ma, ib = 0.1a) hfe hfe vce(sat) vbe(sat) 50 10 ? ? ? ? ? ? 1.0 -1.3 ? volts volts dynamic characteristics collector capacitance (vcb --10v, f = 1m|hz) current-gain bandwidth product (ic = -100ma, vce = -10v) ccbo fr ? ? 13 175 ? ? pf mhz switching characteristics resistive load delay time + rise time storage time fall time \ - -1a, ibi = ibz = -0.1 a vcc = 30v, tp = 25 msec td + v ts tf ? ? 180 250 110 ? ? ? ns (1) pulse test pw = 300ms duty cycle 2%. ia o.ia pe/. ktf current curre n " v i0m? pulse d. max js v ^ c.- * ^ s > s e max vce< max i < max. puls duty v<" ?s^ n , d4iei power case * ed ope cycle pulse dis 70 rat < ! orn. pulse . ^ ,\ 1 ) 04ie5? {? , d4ie- . 1 1 x xv ^ v \ ^ sin ?c 100 0* l_ vt \ ^ on 500 100 30 tj- i50?c tj-25'c tj?5s'c vce-zv \ ^^ 0.01 o.io 1.0 iv iov idov fig. 1 safe region of operation ic-amperes fig. 2 typical hfe vs lc
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