adva nced power electronics corp. 1/5 AP01N40G-HF-3 n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the AP01N40G-HF-3 is in the popular sot-89 small package which is bv 400v fast switching characteristics low gate charge widely used in commercial and industrial applications where a small board footprint is required. this device is well suited for use in low current applications such as small switching power supplies and load switches. o rdering information www.a-powerusa.com 100 % avalanche-tested i 200ma s imple drive requirement r 16 w g d s AP01N40G-HF-3tr : in rohs-complian t halogen-free sot-89 , shipped on tape and reel , 1 0 00pcs/ reel ?2010 advanced power electronics corp. usa 201005191-3 d g d s sot-89 (g) rohs-compliant, halogen-free sot-89 package symbol units v ds drain-source voltage v v gs gate-source voltage i d at t a =2 5 c continuous drain curren t i d at t a =7 0 c continuous drain curren t i dm pulsed drain current 1 a p d at t a =2 5 c total power dissipation t stg t j operating junction temperature range symbol value units rthj-a maximum thermal resistance, junction-ambient 3 100 c /w 20 v parameter 0.8 1.25 w rating 400 0.2 a 0.14 a -55 to 150 c storage temperature range -55 to 150 c parameter
adva nced power electronics corp. 2/5 AP01N40G-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) notes: source-drain diode 1.pulse width limited by maximum junction temperature. 2.pulse test 3.surface mount on fr4 board, t <10s symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 400 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =0.2a - - 16 w v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =0.2a - 0.2 - s i dss drain-source leakage current v ds =400v, v gs =0v - - 10 ua i gss gate-source leakage v gs =20v, v ds =0v - - 100 na q g total gate charge 2 i d =1a - 2.9 4.6 nc q gs gate-source charge v ds =320v - 0.6 - nc q gd gate-drain ("miller") charge v gs =10v - 0.6 - nc t d(on) turn-on delay time 2 v dd =200v - 7.7 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =3.3w -23- ns t f fall time v gs =10v - 73 - ns c iss input capacitance v gs =0v - 76 125 pf c oss output capacitance v ds =25v - 11 - pf c rss reverse transfer capacitance f=1.0mhz - 4 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =0.8a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =1a, v gs =0v - 260 - ns q rr reverse recovery charge di/dt=100a/s - 460 - nc this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
adva nced power electronics corp. 3/5 AP01N40G-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics junction temperature fig 3. normalised bvdss vs. fig 4. normalized on-resistance j 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) n o rmalize d bv dss (v ) 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) n o rmalize d r ds(on) i d =0.2a v g =10v 0 0.2 0.4 0.6 0.8 1 1.2 0 4 8 1 21 6 2 02 4 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =25 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0 0.1 0.2 0.3 0.4 0.5 0.6 04 8 1 2 1 6 2 0 2 4 v ds , drain-to-source voltage (v) i d , dr a i n c u r r e nt (a ) t a =150 o c 10v 9.0v 8.0v 7.0v v g = 6.0 v 0 1 2 3 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a ) t j = 150 o c t j = 25 o c 0.8 1.2 1.6 2 2.4 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(t h) (v )
adva nced power electronics corp. 4/5 AP01N40G-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.001 0.01 0.1 1 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a ) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) n o rmalize d t h e rmal re spon se ( r th ja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thj a =10 0 c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 01 23 4 q g , total gate charge (nc) v gs , g a te to s o u rc e voltage ( v ) i d =1a v ds =320v 0 40 80 120 160 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c ( p f) f =1.0mh z c iss c oss c rss operation in this area limited by r ds(on)
millimeters symbols min nom max b 0.32 0.42 0.52 b1 0.40 0.50 0.60 d1 1.40 1.60 1.80 d 4.40 4.50 4.60 e 2.30 2.45 2.60 e1 3.80 4.05 4.30 e 1.30 1.50 1.70 g 2.80 3.00 3.20 a 1.40 1.50 1.60 c 0.34 0.39 0.44 l 0.80 1.00 1.20 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. d b e e1 d1 e g d c 1n40 y wws l b 1 a package: g = rohs-compliant, halogen-free sot-89 adva nced power electronics corp. 5/5 AP01N40G-HF-3 ?2010 advanced power electronics corp. usa www.a-powerusa.com package dimensions: sot-89 marking information: product: ap01n40g date/lot code y = last digit of the year ww = work week s = lot code sequence packing: parts are s hipped on tape and reel, 1000pcs per reel. the reel is sealed in a moisture barrier bag (mbb). once the bag is opened, the parts should be considered moisture-sensitive, as defined in ipc/jedec standard, j-std-020c, with msl=3, and handled accordingly.
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