cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 1 / 9 mtb09n06q8 cyste k product specification n - channel enhancement mode power mosfet mtb09n06q8 features ? single drive requirement ? fast switching characteristic ? low r ds(on) ? pb - free lead plating and halogen - free package symbol outline ordering information device package shipping mtb09n06q8 - 0 - t3 - g sop - 8 ( pb - free lead plating and halogen - free package ) 2500 pcs / tape & reel mtb09n06q8 so p - 8 g gate d drain s source p in 1 bv dss 60v i d @v gs =10v 18a r dson @v gs =10v, i d =12a 7.3 m (typ) r dson @v gs =4.5v, i d =10a 8.4m (typ) environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 2 / 9 mtb09n06q8 cyste k product specification absolute maximum ratings (ta=25 ? c) pa rameter symbol limits unit drain - sour c e voltage v ds 6 0 v gate - source voltage v gs 20 continuous drain current @v gs =10v, t c =25 ? c (note 1) i d 18.0 a continuous drain current @v gs =10v,t c =100 ? c (note 1) 12.7 continuous drain current @v gs =10v,t a =25 ? c (note 2 ) 12.0 continuous drain current @v gs =10v,t a =70 ? c (note 2 ) 9.6 pulsed drain current i dm 72 avalanche current i as 40 avalanche energy @ l=0.1mh, i d =40a, r g =25 (note 2 ) e as 80 mj repetitive avalanche energy @ l=0.05mh (note 3 ) e ar 0.6 total power dissipation t c =25 (note 1 ) p d 6 w t c =100 (note 1 ) 3 t a =25 (note 2 ) 2.5 t a =70 (note 2 ) 1.6 operating junction and storage temperature range tj, tstg - 55~+1 75 ? c thermal data parameter symbol value unit thermal resistance, junction - to - cas e, max r th,j - c 25 ? c /w thermal resistance, junction - to - ambient, max (note 2 ) r th,j - a 50 note : 1 . the power dissipation p d is based on t j(max) =175 c, using junction - to - case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2 . the value of r ja is measured with the device mounted on 1 in 2 fr - 4 board with 2 oz. copper, in a still air environment with t a =25 c. the power dissipation pdsm is based on r ja and the maximum allowed junction temperature of 150 c. the value in any given application depends on the users specific board design, and the maximum temperature of 175 c may be used if the pcb allows it. 3 . repetitive rating, pulse width limited by junction temperature t j(max) =175 c. ratings are based on low freque ncy and low duty cycles to keep initial t j =25 c. characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 60 - - v v gs = 0v , i d = 250 a ? bv dss /?tj - 0.1 - v/ ? c reference to 25 ? c, i d =250a v gs(th) 1.0 - 2.5 v v ds = v gs , i d = 250 a g fs *1 - 30 - s v ds = 5v , i d = 10a i gss - - 100 n a v gs = 20v i dss - - 1 a v ds = 48v, v gs =0v - - 25 v ds = 48v, v gs =0v, tj=125 ? c r ds ( on ) *1 - 7.3 11 m v gs = 10v , i d = 12a - 8.4 14 m v gs = 4.5v , i d = 10a
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 3 / 9 mtb09n06q8 cyste k product specification characteristics (t c =25 ? symbol min. typ. max. unit test conditions dynamic ciss - 1974 - pf v gs =0v, v ds =30v, f=1mhz co ss - 285 - crss - 197 - qg *1, 2 - 36.8 - nc v ds =30v, v gs =10v, i d =18a qgs *1, 2 - 3.9 - qgd *1, 2 - 13.2 - t d(on) *1, 2 - 12.8 - ns v ds =30v, i d =18a, v gs =10v, r gs =3 tr *1, 2 - 18 - t d(off) *1, 2 - 48.8 - t f *1, 2 - 13.4 - source - drain diode i s *1 - - 12 a i sm *3 - - 48 v sd *1 - 0.67 1 v i s =1.5a, v gs =0v trr - 19.3 - ns i f =12a, di f /dt=100a/ s qrr - 14.8 - nc note : * 1. pulse test : pulse width ? 3 0 0s, duty cycle ? 2% *2.independent of operating temperature *3.pulse wi dth limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 4 / 9 mtb09n06q8 cyste k product specification typical characteristics typical output characteristics 0 20 40 60 80 100 0 2 4 6 8 10 v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v,5v,4v v gs =3v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v v gs =3v v gs =2.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25 c tj=150 c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =1 2 a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =1 2 a r ds(on) @tj=25c : 7 .3m typ.
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 5 / 9 mtb09n06q8 cyste k product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature( c) v g s(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25 c pulsed v ds =5v gate charge characteristics 0 2 4 6 8 10 0 10 20 30 40 50 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =30v i d =18a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t c =25 c, tj=175 c v gs =10v, jc =25 c/w single pulse dc 100ms r dson limited 1s 100 s 1ms 10ms maximum drain current vs case temperature 0 5 10 15 20 25 25 50 75 100 125 150 175 200 t c , case temperature( c) i d , maximum drain current(a) v gs =10v, r jc =25 c/w
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 6 / 9 mtb09n06q8 cyste k product specification typical char acteristics (cont.) typical transfer characteristics 0 8 16 24 32 40 48 56 64 72 0 2 4 6 8 10 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse maximum power dissipation 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width(s) peak transient power (w) t j(max) =175 c t c =25 c jc =25 c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =25 c/w
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 7 / 9 mtb09n06q8 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 8 / 9 mtb09n06q8 cyste k product specification recommended wave soldering condition product peak temperature soldering time pb - free d evices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 seconds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of th e package, measured on the package body surface.
cystech electronics corp. spec. no. : c 912q8 issued date : 20 14 . 07 . 24 revised date : page n o. : 9 / 9 mtb09n06q8 cyste k product specification so p - 8 dimension *: typical dim inches millimeters dim inches millimeters min. max. min. max. min. max. min. max. a 0.1 850 0.2007 4. 70 5.10 i 0.00 31 0.0 110 0.0 8 0.2 8 b 0.1 457 0.1 614 3. 70 4.10 j 0. 01 57 0.0 323 0. 4 0 0. 83 c 0.2283 0.2441 5.80 6.20 k 0.0074 0.0 102 0.19 0.2 6 d 0.0 500* 1.2 7* l 0.0145 0.0204 0.37 0.52 e 0.01 30 0.0 201 0.3 3 0. 51 m 0.0118 0.0197 0. 30 0. 50 f 0.1472 0.1527 3.74 3.88 n 0.0031 0.0051 0.08 0.13 g 0.0 4 7 2 0.06 38 1. 20 1.6 2 o 0.0 000 0.0059 0.00 0.15 h 0.1889 0.2007 4.80 5.10 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question wit h packing specification or packing method, please contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. re production in whole or in part is prohibited without the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. marking: 8 - lead so p - 8 plastic package cystek package code: q 8 date code device name b09 n06 top view a b front view f c d e g part a i h j k o m l n right side view part a
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