qs.iis.ij ^ss-ml-donductoi larooucfi, one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 pnp silicon transistor, epitaxial planar transistor pnpsilicium, planar epitaxial bf416 *BF418 compl. of bf 415 and bf 417 4< preferred device ditptumt ncommtndt video output stages in tv sets mjw dt tortit dn tmpllficltwrs vidfo dins in tiuvlttun vceo h21e(-25ma) ft(-25 ma) -250v -300v 30 70mhz bf416 BF418 min, typ. maximum power dissipation dissipation d? puisstnca mtximtle pllltic case to-126- see outline drawing cb-16 on ian page) bottler plutiqut voir dutin can cb-1s ammiint p*tn p,o, (wl !\o 100 1?0 weight : 0,7 g. collector connected to metal part of cate cfllfcaut rtvitl * it ptnl* rntal- llqut du txtthr absolute ratings (limiting values) t u - +25 "c valeurs limites absolues d'utilisation ?nib (unlen otherwiw stated) (stuflmhatlmucontnlntl BF418 BF418 colleetor-bem voltage tftltntft cotlfct9uf*oti collector-emitter voltage emitter-bate voltage twutan ?nwnturamt collector current courtnt cemohir peak collector current cbunnr dk aiu * cah*et*ar power diuipation tca>ec 25c diulf?tfe*ili pulutna j h= 25c storage temperature rnin. 7*viipe^vttmv de fiwiaflpi max. vcbo vceo vebo 'c 'cm ptot % -250 -260 -5 -200 -300 6 1.25 - 56 + 160 -300 -300 -6 -200 -300 6 us - 56 + 160 v v v ma ma w w ?c ?c vi .semi-c (inductors reserves the right to change lest conditions, parameter limits ;ind package jimeiuioiu without notice information furnished by nj scmi-cunduclort w believed to he holh accurate and reliable ,it ihe time of going to press. however \ stini-c oiiduuuk .iisuiik's iiu rcsptnuibility cor my ermrs or umissiiuis jiwuvurcd in its use nj seini-cninluui'rs fiic n-:n irers (n tcril\i 'liiliv-htvis ire . urrenf h bf 416, bf 418 static characteristics caracteristiques statiques 25?c *" " (unless otherwise stated) istulindicuioiueomnintl collector-bate cut-off currant counnt itihiat ?//k?h>ib*? emitter-base cut-off current counm rtimutl ?vrwmir-am collector-tun breakdown voltaga collector-emitter breakdown voltage ttntfen <*> eltqiaff collktftir-tmtntur emitter-base breakdown volttge tint/on d* clfqiagl anmtturtev static forward currant transfer ratio vthtir mtiqut du neptn cf mntltrt dlna du eauaat collector-emitter saturation voltage tuition w-emrttir volt^ ttniloa t*m-tm*ttmvr collector-emitter saturation voltage test conditions condlttonidtmfsun vcb = -200 v ie =0 vcb 250v 1, =0 veb"-3v 'c -o lc =-10/m ie =0 lc - -10 ma ib =0 ie =-10^ lc =0 vce--15v lc = -5 ma vce=-15v ic = -25 ma ig = ? b ma ib = -1 ma vc=-15v !(. = ?6 ma vce--15v lc = -26 ma iq = ?25 ma ib =-5ma 'cbo 'ebo v(br)cbo v(br)ceo* v(br)ebo h21e vce?, vbe vce5.t bf416 BF418 bf416 BF418 bf416 BF418 win. typ. max. -50 -50 -bo -250 -300 -250 -300 _5 25 30 -0,2 -0,6 -0,66 -0,9 -0,72 -1 -0,4 -1 na na na v v v v v v v v v ?pulwd impuuom
bf 416, bf 418 dynamic characteristics t caracteristiouesqynamiques (unless otherwise stated) (slut indiatlom contrtintl output capacitance ctptcitj dt tettii transition frequency frtquino* dt trtntitton high frequency knee voltage tuition if eoudi in htva frtqutnct test conditions condition! dt mttun vcb = -30v ie =o f - 1 mhz vce=-15v lc = -25 ma f -20mhz lc ~ 25 ma f =1mhi c22b 't vcek(hf) notel min. typ. max. 4,5 70 -20 f mhz v note 1 : the high frequency knee voltage of a transistor is that value of the collector emitter voltage at which the small signal forward current transfer ratio h2ie has dropped to 80% of the value at vce = ~50 v lt ant/on dl coud* t btutt frj&mnct d'an initiator in. air dlflnition. it illtur dt i* muion col/tcnur tmtltnirpour luiuilli it npport at trintfin dirta du courmm t pitit signil h!t, ttt tombt t 30% dt a nlhir t -so v "21e (%) 100 80 vcek -50 vce(vi thermal characteristics caracteristiques thermiques junction c?? thermal resistance rfiimna thitinkhm f/onction-oottitrl junction-ambient thermal resistance futiiuna ihfrmlovi ijonctiontmbitnttl rth(j-c) rth(j-a) 20,83 100 c/w "c/w
|
