to-220 -3l plastic-encapsulate transistors tip120,121,122 darlington transistor (npn) tip125,126,127 darlington transistor (pnp) features medium power complementary s ilicon t ransistors maximum ratings (t a =25 unless otherwise noted) symbol parameter tip120 tip125 tip121 tip126 TIP122 tip127 unit v cbo collector-base voltage 60 80 100 v v ceo collector-emitter voltage 60 80 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 5 a p c collector power dissipation 2 w r ja thermal resistance junction to ambient 62.5 /w r jc thermal resistance junction to case 1.92 /w t j junction temperature 150 t stg storage temperature -55to+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in m ax unit collector-base breakdown voltage tip120,tip125 tip121,tip126 TIP122,tip127 v (br) cbo i c = 1ma,i e =0 60 80 100 v collector-emitter breakdown voltage tip120,tip125 tip121,tip126 TIP122,tip127 v ceo (sus) i c = 30ma,i b =0 60 80 100 v collector cut-off current tip120,tip125 tip121,tip126 TIP122,tip127 i cbo v cb = 60 v, i e =0 v cb = 80 v, i e =0 v cb = 100v, i e =0 0.2 ma collector cut-off current tip120,tip125 tip121,tip126 TIP122,tip127 i ceo v ce =30 v, i b =0 v ce =40 v, i b =0 v ce =50 v, i b =0 0.5 ma emitter cut-off current i ebo v eb =5 v, i c =0 2 ma h fe(1) v ce = 3v, i c =0.5a 1000 dc current gain h fe(2) v ce = 3v, i c =3 a 1000 collector-emitter saturation voltage v ce (sat) i c =3a,i b =12ma i c =5 a,i b =20ma 2 4 v base-emitter voltage v be v ce =3v, i c =3 a 2.5 v output capacitance tip125,tip126,tip127 tip120,tip121,TIP122 c ob v cb =10v, i e =0,f=0.1mhz 300 200 pf to-220 -3l 1.base 2.collector 3.emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
-0.1 -1 -10 0 50 100 150 200 250 -1 -10 -100 -1000 10 0 25 50 75 100 125 150 0 1 2 3 -1 -10 -100 -1000 -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -1 -10 -100 -1000 -0 -200 -400 -600 -800 -1000 -1200 -0 -1 -2 -3 -4 -5 -6 -7 -8 -0 -1 -2 -3 -4 -5 -6 -0.0 -0.5 -1.0 -1.5 -2.0 -0.1 -1 -10 -100 -1000 f=1mhz i e =0 / i c =0 t a =25 o c tip127 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob -20 10000 1000 -5000 v ce = -3v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? 100 collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a -5000 collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =250 i c v besat ?? -5000 -5000 t a =100 t a =25 =250 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 -1.0ma -0.9ma -0.8ma -0.7ma -0.6ma -0.5ma -0.4ma -0.3ma i b =-0.2ma collector-emitter voltage v ce (v) collector current i c (a) static characteristic vce=-3v ta=25 ta=100 o c base-emitter voltage v be (v) collector current i c (ma) i c ?? v be 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,aug,2012
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