? ? ? ? guilin strong micro-electronics co.,ltd. gm901 8( ? s9018) features c npn high frequency transistor maximum ratings ~? characteristic ? symbol ? rating ~? unit collector-emitter voltage ?OlO? v ceo 20 vdc collector-base voltage ?OO? v cbo 30 vdc emitter-base voltage lOO? v ebo 5.0 vdc collector current - continuous ?O - Bm ic 50 madc thermal characteristics characteristic ? symbol ? max ? unit total device dissipation ? fr-5 board(1) t a = 25 h?? 25 derate above25 ^ 25 fp p d 225 1.8 mw mw/ total device dissipation ? alumina substrate Xr ,(2)t a = 25 derate above25 ^ 25 fp p d 300 2.4 mw mw/ thermal resistance junction to ambient r ja 417 /w junct io n and storage temperature Y??? t j , t stg -55to+150
? ? ? ? guilin strong micro-electronics co.,ltd. gm901 8( ? s9018) device marking gm9018 (s9018) =j8 electrical characteristics (t a =25 unless otherwise noted of?? 25 ) characteristic ? symbol ? min ? typ ? m ax ? unit emitter cutoff current lO? (v eb =3.0v,i c =0) i ebo 0.5 a collector cutoff current ?O? (v cb =20v,i e =0) i cbo 0.5 a collector-base breakdown voltage ?OO? (ic=100ua) v (br)cbo 30 v collector-emitter breakdown voltage ?OlO? (ic=1ma) v (br)ceo 20 v emitter-base breakdown voltage lOO? (i e =100ua) v (br)ebo 4 v collector saturation voltage ?O?? (ic=10madc,i b =1ma) v ce(sat) 0.6 v base saturation voltage O?? (ic=10madc,i b =1ma) v b e(sat) 1.4 v dc current gain ? (v ce =5.0v,i c =1.0ma) h fe 40 200 gain bandwidth product ?e (v ce =5.0v,i c =10ma) f t 600 800 1100 mhz noise figure S (v ce =6v,ic=0.1ma,f=1khz,rg=10k ) nf 1.0 db output capacitance ? (v cb =10v,i e =0,f=1.0mhz) c ob 1.2 1.5 pf 1. fr-5=1.0 0.75 0.062in. 2. alumina=0.4 0.3 0.024in.99.5%alumina.
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