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this is information on a product in full production. october 2013 docid022853 rev 3 1/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 n-channel 650 v, 0.09 typ., 28 a mdmesh? v power mosfets in d 2 pak, i 2 pak, to-220 and to-247 packages datasheet - production data figure 1. internal schematic diagram features ? worldwide best r ds(on) * area ? higher v dss rating and high dv/dt capability ? excellent switching performance ? 100% avalanche tested applications ? switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. 1 3 2 tab 1 2 3 tab 1 2 3 tab 1 2 3 d 2 pak i 2 pak to-220 to-247 !-v $ ' 3 order codes v ds @ t jmax r ds(on) max i d stb34n65m5 710 v 0.11 28 a sti34n65m5 stp34n65m5 STW34N65M5 table 1. device summary order codes marking packages packaging stb34n65m5 34n65m5 d 2 pak tape and reel sti34n65m5 i 2 pak tube stp34n65m5 to-220 STW34N65M5 to-247 www.st.com
contents stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 2/22 docid022853 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
docid022853 rev 3 3/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 electrical ratings 22 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 28 a i d drain current (continuous) at t c = 100 c 17.7 a i dm (1) drain current (pulsed) 112 a p tot total dissipation at t c = 25 c 190 w dv/dt (1) 1. i sd 28 a, di/dt 400 a/s; v ds peak < v (br)dss , v dd =400 v. peak diode recovery voltage slope 15 v/ns dv/dt (2) 2. v ds 480 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit d 2 pa k to-220, i 2 pa k to-247 r thj-case thermal resistance junction-case max 0.66 c/w r thj-pcb thermal resistance junction-pcb max (1) 1. when mounted on 1 inch2 fr-4, 2 oz copper board. 30 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 7a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 510 mj
electrical characteristics stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 4/22 docid022853 rev 3 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 14 a 0.09 0.11 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2700 - pf c oss output capacitance - 75 - pf c rss reverse transfer capacitance -6.3-pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -220-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -63-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.95 - q g total gate charge v dd = 520 v, i d = 14 a, v gs = 10 v (see figure 18 ) - 62.5 - nc q gs gate-source charge - 17 - nc q gd gate-drain charge - 28 - nc
docid022853 rev 3 5/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 electrical characteristics 22 table 7. switching times symbol parameter test conditions min. typ. max. unit t d (v) voltage delay time v dd = 400 v, i d = 18 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) -59-ns t r (v) voltage rise time - 8.7 - ns t f (i) current fall time - 7.5 - ns t c (off) crossing time - 12 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 28 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 112 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 28 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 28 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 350 ns q rr reverse recovery charge - 5.6 c i rrm reverse recovery current - 32 a t rr reverse recovery time i sd = 28 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 422 ns q rr reverse recovery charge - 7.4 c i rrm reverse recovery current - 35 a
electrical characteristics stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 6/22 docid022853 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d 2 pak, i 2 pak and to-220 figure 3. thermal impedance for d 2 pak, i 2 pak and to-220 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am15 3 11v1 figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am15 3 1 8 v1 i d 60 40 20 0 0 10 v d s (v) 20 (a) 5 15 8 0 v g s = 6 v v g s = 7 v v g s = 8 v 25 v g s = 9 v 10 3 0 50 70 am15 3 19v1 i d 3 0 20 10 0 3 5 v g s (v) 7 (a) 4 6 8 40 9 v d s = 25 v 50 60 70 8 0 am15 3 20v1
docid022853 rev 3 7/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 electrical characteristics 22 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 20 q g (nc) (v) 50 8 3 0 40 10 v dd =520 v i d =14 a 60 3 00 200 100 0 400 500 v d s (v) v d s 12 70 8 0 am15 3 21v1 r d s (on) 0.0 8 6 0.0 8 4 0.0 8 2 0.0 8 0 10 i d (a) ( ) 5 15 0.0 88 0.09 v g s =10v 20 25 0.092 0.094 0.096 0.096 am15 3 22v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss 1000 am15 3 2 3 v1 e o ss 4 2 0 0 100 v d s (v) ( j) 400 6 200 3 00 8 10 500 600 12 am15 3 24v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d = 250 a v d s = v g s am05459v1 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 i d = 14 a v g s = 10 v am05460v1
electrical characteristics stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 8/22 docid022853 rev 3 figure 14. source-drain diode forward characteristics figure 15. normalized v ds vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v1 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 0 0 20 r g ( ) ( j) 10 3 0 100 200 40 i d =1 8 a v dd =400 v eon eoff 3 00 v g s =10 v 400 500 am15 3 25v1
docid022853 rev 3 9/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 test circuits 22 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v1 ind u ctive lo a d t u rn -off id vg s vd s 90 % vd s 10 % id 90 % vg s on t d (v) t c (off) 10 % vd s 90 % id vg s (i(t)) on t f (i) t r (v) ))
package mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 10/22 docid022853 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
docid022853 rev 3 11/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 package mechanical data 22 table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
package mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 12/22 docid022853 rev 3 figure 23. d2pak (to-263) drawing figure 24. d2pak footprint (a) a. all dimension are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
docid022853 rev 3 13/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 package mechanical data 22 table 10. i2pak (to-262) mechanical data dim. mm. min. typ max. a 4.40 4.60 a1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 d 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 e10 10.40 l13 14 l1 3.50 3.93 l2 1.27 1.40
package mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 14/22 docid022853 rev 3 figure 25. i2pak (to-262) drawing 0004982_rev_h
docid022853 rev 3 15/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 package mechanical data 22 table 11. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
package mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 16/22 docid022853 rev 3 figure 26. to-220 type a drawing ?type!?2ev?4
docid022853 rev 3 17/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 package mechanical data 22 table 12. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 18/22 docid022853 rev 3 figure 27. to-247 drawing 0075 3 25_g
docid022853 rev 3 19/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 packaging mechanical data 22 5 packaging mechanical data table 13. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3
packaging mechanical data stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 20/22 docid022853 rev 3 figure 28. tape figure 29. reel p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
docid022853 rev 3 21/22 stb34n65m5, sti34n65m5, stp34n65m5, STW34N65M5 revision history 22 6 revision history table 14. document revision history date revision changes 23-feb-2012 1 first release. 15-oct-2012 2 ? added package, mechanical data: i2pakfp ? updated table 1: device summary , table 2: absolute maximum ratings , table 3: thermal data . ? minor text changes. ?curves inserted 02-oct-2013 3 ? the part numbers stf34n65m5 and stfi34n65m5 have been moved to the separate datasheet ? modified: figure 1 ? added: mosfet dv/dt ruggedness parameter in ta bl e 2 ? updated: section 4: package mechanical data and section 5: packaging mechanical data ? minor text changes
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