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MRFE6P3300HR3 mrfe6p3300hr5 1 rf device data freescale semiconductor rf power field effect transistor n - channel enhancement - mode lateral mosfet designed for broadband commercial an d industrial applications with frequencies from 470 to 860 mhz. the high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. ? typical narrowband two - tone performance @ 860 mhz: v dd = 32 volts, i dq = 1600 ma, p out = 270 watts pep power gain ? 20.4 db drain efficiency ? 44.8% imd ? - 28.8 dbc ? capable of handling 10:1 vswr, @ 32 vdc, 860 mhz, 3 db overdrive, designed for enhanced ruggedness features ? characterized with series equivalent large - signal impedance parameters ? internally matched for ease of use ? designed for push - pull operation only ? qualified up to a maximum of 32 v dd operation ? integrated esd protection ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. r5 suffix = 50 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain - source voltage v dss - 0.5, +66 vdc gate - source voltage v gs - 0.5, +12 vdc storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature (1,2) t j 225 c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 80 c, 300 w cw case temperature 82 c, 220 w cw case temperature 79 c, 100 w cw case temperature 81 c, 60 w cw r jc 0.23 0.24 0.27 0.27 c/w 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http://www.freescale.com/rf . select tools/software/application software/calculators to access the mttf calculators by product. 3. refer to an1955, thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf . select documentation/application notes - an1955. document number: mrfe6p3300h rev. 0, 5/2007 freescale semiconductor technical data MRFE6P3300HR3 mrfe6p3300hr5 860 mhz, 300 w, 32 v lateral n - channel rf power mosfet case 375g - 04, style 1 ni - 860c3 ? freescale semiconductor, inc., 2007. all rights reserved.
2 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 table 3. esd protection characteristics test methodology class human body model (per jesd22 - a114) 3b (minimum) machine model (per eia/jesd22 - a115) c (minimum) charge device model (per jesd22 - c101) iv (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics (1) zero gate voltage drain leakage current (4) (v ds = 66 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (4) (v ds = 32 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics (1) gate threshold voltage (v ds = 10 vdc, i d = 350 adc) v gs(th) 1 2.2 3 vdc gate quiescent voltage (3) (v dd = 32 vdc, i d = 1600 madc, measured in functional test) v gs(q) 2 2.8 4 vdc drain - source on - voltage (v gs = 10 vdc, i d = 2.4 adc) v ds(on) ? 0.22 0.3 vdc dynamic characteristics (1,2) reverse transfer capacitance (4) (v ds = 32 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 1.22 ? pf output capacitance (4) (v ds = 32 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 217 ? pf input capacitance (1) (v ds = 32 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c iss ? 106 ? pf functional tests (3) (in freescale narrowband test fixture, 50 ohm system) v dd = 32 vdc, i dq = 1600 ma, p out = 270 w pep, f1 = 857 mhz, f2 = 863 mhz power gain g ps 19 20.4 23 db drain efficiency d 41 44.8 ? % intermodulation distortion imd ? - 28.8 -27 dbc input return loss irl ? - 18.4 -9 db 1. each side of the device measured separately. 2. part internally matched both on input and output. 3. measurement made with device in push - pull configuration. 4. drains are tied together internally as this is a total device value.
MRFE6P3300HR3 mrfe6p3300hr5 3 rf device data freescale semiconductor figure 1. 820 - 900 mhz narrowband test circuit schematic z12, z13 0.225 x 0.507 microstrip z14, z15 0.440 x 0.435 microstrip z16, z17 0.123 x 0.215 microstrip z19, z20 0.165 x 0.339 microstrip pcb arlon gx - 0300 - 55 - 22, 0.030 , r = 2.5 z1, z18 0.401 x 0.081 microstrip z2, z3 0.563 x 0.101 microstrip z4, z5 1.013 x 0.058 microstrip z6, z7 0.416 x 0.727 microstrip z8, z9 0.191 x 0.507 microstrip z10, z11 1.054 x 0.150 microstrip rf input c2 r3 c1 c3 v bias z6 c4 z7 c5 z1 dut c8 c9 r2 b2 v supply z8 z9 z13 z15 z17 c13 c24 c19 v supply rf output z18 v bias z4 z5 z2 z3 z11 z10 + + + c7 r1 b1 c14 c12 z12 z14 z16 c20 c22 + c21 c23 c15 + c16 c18 + c17 c10 c11 c6 coax1 coax2 coax3 coax4 z19 z20 table 5. 820 - 900 mhz narrowband test circuit component designations and values part description part number manufacturer b1, b2 ferrite beads, short 2743019447 fair - rite c1, c9 1.0 f, 50 v tantulum chip capacitors t491c105k050at kemet c2, c7, c17, c21 0.1 f, 50 v chip capacitors cdr33bx104akys kemet c3, c8, c16, c20 1000 pf chip capacitors atc100b102jt50xt atc c4, c5, c13, c14 100 pf chip capacitors atc100b101jt500xt atc c6, c12 8.2 pf chip capacitors atc100b8r2jt500xt atc c10 9.1 pf chip capacitor atc100b9r1bt500xt atc c11 1.8 pf chip capacitor atc100b1r8bt500xt atc c15, c19 47 f, 50 v electrolytic capacitors emvy500ada470mf80g nippon c18, c22 470 f, 63 v electrolytic capacitors esme630ell471mk255 united chemi - con c23, c24 22 pf chip capacitors atc100b220ft500xt atc coax1, 2, 3, 4 50 , semi rigid coax, 2.06 long ut - 141a - tp micro - coax r1, r2 10 , 1/4 w chip resistors crcw120610r0fkta vishay r3 1 k , 1/4 w chip resistor crcw12061001fkta vishay
4 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 figure 2. 820 - 900 mhz narrowband test circuit component layout cut out area c1 b1 r1 r3 c2 c3 c4 c5 c6 c9 c7 c8 b2 r2 c19 c24 c20 c21 c22 c10 c11 c12 c13 c14 c23 c15 c16 c17 c18 mrf6p9220, rev. 2 coax3 coax4 coax1 coax2 v gg v gg v dd v dd
MRFE6P3300HR3 mrfe6p3300hr5 5 rf device data freescale semiconductor typical narrowband characteristics g ps , power gain (db) irl, input return loss (db) acpr (dbc) ?10 ?20 900 820 irl g ps acp ?u f, frequency (mhz) figure 3. single - carrier ofdm broadband performance @ 60 watts avg. 890 880 870 860 850 840 830 21 20 ?65 31 27 ?50 ?55 ?60 d , drain efficiency (%) d 18.5 18 17.5 17 20.5 19.5 19 29 25 ?45 ?5 ?15 v dd = 32 vdc, p out = 60 w (avg.) i dq = 1600 ma, 8k mode ofdm 64 qam data carrier modulation 5 symbols g ps , power gain (db) irl, input return loss (db) acpr (dbc) ?20 ?5 ?15 900 820 irl g ps acp ?u f, frequency (mhz) figure 4. single - carrier ofdm broadband performance @ 120 watts avg. 890 880 870 860 850 840 830 20.5 19 ?60 44 40 ?45 ?50 ?55 d , drain efficiency (%) d 17.5 17 16.5 19.5 18.5 18 42 38 ?40 0 ?10 figure 5. two - tone power gain versus output power 21 1 i dq = 2400 ma 2000 ma p out , output power (watts) pep 20 19 100 600 g ps , power gain (db) 18 1600 ma 10 1200 ma figure 6. third order intermodulation distortion versus output power p out , output power (watts) pep 100 ?20 ?30 ?40 ?50 ?60 10 intermodulation distortion (dbc) imd, third order ?10 i dq = 800 ma 2400 ma 1200 ma 1600 ma v dd = 32 vdc, f1 = 857 mhz, f2 = 863 mhz two ?tone measurements, 6 mhz tone spacing 600 1 acp ?l 0 acp ?l 20 v dd = 32 vdc, f1 = 857 mhz, f2 = 863 mhz two ?tone measurements, 6 mhz tone spacing 2000 ma v dd = 32 vdc, p out = 120 w (avg.) i dq = 1600 ma, 8k mode ofdm 64 qam data carrier modulation 5 symbols 16 17 800 ma
6 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 typical narrowband characteristics figure 7. intermodulation distortion products versus output power ?70 ?10 10 7th order p out , output power (watts) pep 3rd order ?20 ?30 ?40 ?50 100 600 imd, intermodulation distortion (dbc) ?60 5th order 1 figure 8. intermodulation distortion products versus tone spacing ?70 ?10 1 two ?tone spacing (mhz) v dd = 32 vdc, p out = 150 w (pep), i dq = 1600 ma two ?tone measurements (f1 + f2)/2 = center frequency of 860 mhz ?20 ?30 ?40 ?50 10 80 imd, intermodulation distortion (dbc) figure 9. pulsed cw output power versus input power 42 63 34 p in , input power (dbm) 61 59 57 53 36 38 40 actual ideal 32 p out , output power (dbm) 55 60 58 56 54 33 35 37 39 41 62 p1db = 55.15 dbm (327.9 w) p3db = 55.9 dbm (388.37 w) p6db = 56.28 dbm (424.38 w) acpr, adjacent channel power ratio (dbc) figure 10. single - carrier dvbt ofdm acpr, power gain and drain efficiency versus output power 15 ?70 p out , output power (watts) avg. 45 ?25 30 20 ?30 ?35 ?50 10 ?45 d , drain efficiency (%), g ps , power gain (db) g ps acp ?u v dd = 32 vdc, i dq = 1600 ma, f = 860 mhz 8k mode ofdm, 64 qam data carrier modulation, 5 symbols ?30 c 40 1 200 35 25 ?40 85 c t c = ?30 c 25 c d v dd = 32 vdc, i dq = 1600 ma f1 = 857 mhz, f2 = 863 mhz two ?tone measurements, 6 mhz tone spacing ?60 im3 ?l im3 ?u im5 ?l im5 ?u im7 ?u im7 ?l v dd = 32 vdc, i dq = 1600 ma pulsed cw, 12 sec(on), 1% duty cycle f = 860 mhz 10 5 0 ?65 ?60 ?55 100 acp ?l ?30 c 25 c 85 c 25 c 85 c
MRFE6P3300HR3 mrfe6p3300hr5 7 rf device data freescale semiconductor typical narrowband characteristics 800 15 22 0 70 p out , output power (watts) cw figure 11. power gain and drain efficiency versus cw output power v dd = 32 vdc i dq = 1600 ma f = 860 mhz 100 10 20 19 18 17 16 50 40 30 20 10 d , drain efficiency (%) g ps d g ps , power gain (db) 1 t c = ?30 c 85 c 25 c ?30 c 21 60 25 c 85 c figure 12. power gain versus output power p out , output power (watts) cw v dd = 28 v g ps , power gain (db) 400 16 50 200 18 i dq = 1600 ma f = 860 mhz 32 v 0 100 150 250 300 350 30 v 17 19 20 21 250 10 7 90 t j , junction temperature ( c) figure 13. mttf versus junction temperature this above graph displays calculated mttf in hours when the device is operated at v dd = 32 vdc, p out = 270 w pep, and d = 44.8%. mttf calculator available at http:/www.freescale.com/rf. select tools/ software/application software/calculators to access the mttf calcu? lators by product. 10 6 10 5 10 4 110 130 150 170 190 mttf (hours) 210 230
8 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 digital test signals 12 0.0001 100 0 peak ?to?average (db) figure 14. single - carrier dvtb ofdm 10 1 0.1 0.01 0.001 2468 probability (%) 8k mode dvtb ofdm 64 qam data carrier modulation 5 symbols 5 ?20 ?5 7.61 mhz f, frequency (mhz) figure 15. 8k mode dvbt ofdm spectrum ?30 ?40 ?50 ?90 ?70 ?80 ?100 ?110 ?60 ?4 ?3 ?2 ?1 0 1 2 3 4 20 khz bw (db) 20 khz bw 10 acpr measured at 3.9 mhz offset from center frequency
MRFE6P3300HR3 mrfe6p3300hr5 9 rf device data freescale semiconductor f mhz z source z load 830 845 860 4.52 - j6.73 3.89 - j5.81 4.22 - j6.38 4.89 - j1.35 5.06 - j1.01 5.18 - j0.58 v dd = 32 vdc, i dq = 1600 ma, p out = 270 w pep z source = test circuit impedance as measured from gate to gate, balanced configuration. z load = test circuit impedance as measured from drain to drain, balanced configuration. z source z load input matching network device under test output matching network ? ?+ + figure 16. 820 - 900 mhz narrowband series equivalent source and load impedance z o = 10 f = 890 mhz f = 830 mhz z load z source 875 890 3.39 - j4.32 3.54 - j5.10 5.27 - j0.11 5.36 + j0.43 f = 830 mhz f = 890 mhz
10 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 package dimensions case 375g - 04 issue g ni - 860c3 1 2 34 5 d q g l k 2x h e f c seating plane notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m?1994. 3. dimension h to be measured 0.030 (0.762) away from package body. 4. recommended bolt center dimension of 1.140 (28.96) based on 3m screw. 4x b a t dim a min max min max millimeters 1.335 1.345 33.91 34.16 inches b 0.380 0.390 9.65 9.91 c 0.180 0.224 4.57 5.69 d 0.325 0.335 8.26 8.51 e 0.060 0.070 1.52 1.78 f 0.004 0.006 0.10 0.15 g h 0.097 0.107 2.46 2.72 k 0.135 0.165 3.43 4.19 l n 0.851 0.869 21.62 22.07 q 0.118 0.138 3.00 3.30 r 0.395 0.405 10.03 10.29 style 1: pin 1. drain 2. drain 3. gate 4. gate 5. source 1.100 bsc 0.425 bsc 27.94 bsc 10.8 bsc j 0.2125 bsc 5.397 bsc m 0.852 0.868 21.64 22.05 s 0.394 0.406 10.01 10.31 bbb 0.010 ref 0.25 ref ccc 0.015 ref 0.38 ref m a m bbb b m t m a m bbb b m t b (flange) 4x m a m bbb b m t m a m ccc b m t r (lid) s (insulator) j m a m bbb b m t m a m ccc b m t n (lid) m (insulator) a 4
MRFE6P3300HR3 mrfe6p3300hr5 11 rf device data freescale semiconductor product documentation refer to the following documents to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices revision history the following table summarizes revisions to this document. revision date description 0 may 2007 ? initial release of data sheet
12 rf device data freescale semiconductor MRFE6P3300HR3 mrfe6p3300hr5 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2007. all rights reserved. how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 +1 - 800 - 521 - 6274 or +1 - 480 - 768 - 2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 fax: 303 - 675 - 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrfe6p3300h rev. 0, 5/2007

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