p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 350 volt v ds *r ds(on) =100 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -350 v continuous drain current at t amb =25c i d -50 ma pulsed drain current i dm -480 ma gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -350 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -4.5 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -20 -2 m a ma v ds =-350 v, v gs =0 v ds =-280 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -120 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 100 w v gs =-10v,i d =-50ma forward transconductance (1)(2) g fs 40 ms v ds =-25v,i d =-50ma input capacitance (2) c iss 120 pf common source output capacitance (2) c oss 20 pf v ds =-25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 10 ns v dd ? -25v, i d =-50ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 15 ns fall time (2)(3) t f 20 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% ( 2 e-line to92 compatible ZVP0535A 3-409 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d - drain current (ma) transfer characteristics transconductance v drain current g f s - f orw a rd t r a n s c o n du c ta n c e ( ms ) -20 -40 -60 -80 -120 -100 60 50 40 30 10 20 0 -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -5v -4v -10v -5v v gs- gate source voltage (volts) -700 -600 -400 -100 0 -200 -500 -300 v gs= -10v -6v -4v -140 -100 -20 0 -60 -8v v gs = -8v i d - d r a i n c u r r e nt (ma) v ds - drain source voltage (volts) capacitance v drain-source voltage v ds -drain source voltage (volts) c-capacitance (pf) -6v 0 -10 -6 -2 -4 -8 0-2 -4 -6-8-10 i d= - 75ma -50ma -25ma 0-2 -4 -6 -8 -10 -140 -120 -80 -20 0 -40 -100 -60 0 100 60 20 40 80 0 -20 -40 -60 -80 -100 c iss c oss c rss i d -drain current (ma) -120 -80 -40 -160 i d - d r a i n c u r r e nt (ma) v ds= -10v 0 v ds= -10v ZVP0535A 3-410
p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 350 volt v ds *r ds(on) =100 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -350 v continuous drain current at t amb =25c i d -50 ma pulsed drain current i dm -480 ma gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -350 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -4.5 v id=-1ma, v ds = v gs gate-body leakage i gss 100 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -20 -2 m a ma v ds =-350 v, v gs =0 v ds =-280 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -120 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 100 w v gs =-10v,i d =-50ma forward transconductance (1)(2) g fs 40 ms v ds =-25v,i d =-50ma input capacitance (2) c iss 120 pf common source output capacitance (2) c oss 20 pf v ds =-25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 10 ns v dd ? -25v, i d =-50ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 15 ns fall time (2)(3) t f 20 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% ( 2 e-line to92 compatible ZVP0535A 3-409 d g s typical characteristics output characteristics v ds - drain source voltage (volts) i d - drain current (ma) transfer characteristics transconductance v drain current g f s - f orw a rd t r a n s c o n du c ta n c e ( ms ) -20 -40 -60 -80 -120 -100 60 50 40 30 10 20 0 -2 -4 -6 -8 -10 0 -20 -40 -60 -80 -100 saturation characteristics v ds- drain source voltage (volts) voltage saturation characteristics v gs- gate source voltage (volts) -5v -4v -10v -5v v gs- gate source voltage (volts) -700 -600 -400 -100 0 -200 -500 -300 v gs= -10v -6v -4v -140 -100 -20 0 -60 -8v v gs = -8v i d - d r a i n c u r r e nt (ma) v ds - drain source voltage (volts) capacitance v drain-source voltage v ds -drain source voltage (volts) c-capacitance (pf) -6v 0 -10 -6 -2 -4 -8 0-2 -4 -6-8-10 i d= - 75ma -50ma -25ma 0-2 -4 -6 -8 -10 -140 -120 -80 -20 0 -40 -100 -60 0 100 60 20 40 80 0 -20 -40 -60 -80 -100 c iss c oss c rss i d -drain current (ma) -120 -80 -40 -160 i d - d r a i n c u r r e nt (ma) v ds= -10v 0 v ds= -10v ZVP0535A 3-410
typical characteristics g f s -forward transconductance (ms) 0-1-2-3-4-5-6-7-8-9-10 0 q-charge (nc) v g s -gate source voltage (v olts) gate charge v gate-source voltage -6 -8 -10 -14 -16 -12 -4 -2 0 v ds = -100v i d= -250ma -200v -350v 0.5 1.0 1.5 2.0 2.5 3.0 0 v ds= -10v 40 30 20 10 50 60 v gs -gate source voltage (volts) transconductance v gate-source voltage on-resistance v gate-source voltage i d- drain current (ma) r ds(on) -drain source resistance ( w ) -5v -6v -8v -10 -100 -1000 v gs =-4v -10v 10 100 -1 1000 normalised r ds(on) and v gs(th) vs temperature t-temperature (c) no r mal ise d r ds(on) and v g s(t h) -40 -20 0 20 40 60 80 120 100 140 160 dr ain - s o u rc e r e s i s tanc e r d s( o n ) g ate t h res h o l d v o l tag e v gs ( th ) i d= -50ma v gs= -10v v gs= v ds 180 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.6 0.8 0.4 i d= -1ma ZVP0535A 3-411
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