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| !"" # $ %& ' (%) * %) doc. no. 5sya1652-02 aug 02 + $ , + , + - * (t j = 25c, unless specified otherwise) . ,/ 0 1 maximum reverse voltage v rrm 1200 v dc forward current i f 75 a maximum forward current i fm limited by t jmax 150 a operating temperature t j -40 .. +150 c 0 (t j = 25c, unless specified otherwise) . ,/ 0 , * 1 t j = 25 c 1.7 1.9 2.3 v forward voltage v f i f = 75 a t j = 125 c 1.9 v t j = 25 c 100 a reverse leakage current i r v r = 1200 v t j = 125 c 1 ma reverse recovery current i rrm 55 a reverse recovery charge q rr 13 c reverse recovery time t rr 400 ns reverse recovery energy e rec i f = 75 a, v cc = 600 v, di/dt = 1200 a/s, l = 50 nh, t j = 125 c, inductive load, switch : 5smx12k1250 4mj ' 2' &3 !$ !"" &3 !$ !"" 0 . 1 overall die l x w7.8 x 7.8 mm exposed front metal l x w6.2 x 6.2 mm dimensions thickness 325 15 m front aisi1 4.2 m metallization back 1) ai / ti / ni / ag 1.2 m 1) for assembly instructions refer to : igbt and diode chips from abb switzerland ltd, semiconductors, doc. no. 5sya2033-01 april 02. 4 ' 5 ( doc. no. 5sya1652-02 aug 02 fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abbsem.com |
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