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october 2010 doc id 16371 rev 2 1/13 13 STD65N55LF3 n-channel 55 v, 7.0 m , 80 a dpak stripfet? iii power mosfet features low threshold drive 100% avalanche tested application switching applications automotive description this product is a n-channel enhancement mode power mosfet built with stripfet? iii technology which is especially tailored to minimized on-state resistance and gate charge, providing superior switching performance. figure 1. internal schematic diagram order code v dss r ds(on) max. i d pw STD65N55LF3 55 v < 8.5 m 80 a 110 w dpak 1 3 !-v $4!"or ' 3 table 1. device summary order code marking package packaging STD65N55LF3 65n55lf3 dpak tape and reel www.st.com
contents STD65N55LF3 2/13 doc id 16371 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STD65N55LF3 electrical ratings doc id 16371 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 55 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 56 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 110 w derating factor 0.73 w/c dv/dt (2) 2. i sd 65 a, di/dt 300 a/s, v dd v (br)dss. tj tjmax peak diode recovery voltage slope 11 v/ns e as (3) 3. starting tj = 25 c, i d = 10 a, v dd = 25 v single pulse avalanche energy 300 mj t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 1.36 c/w rthj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu. thermal resistance ju nction-pcb max 50 c/w
electrical characteristics STD65N55LF3 4/13 doc id 16371 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 55 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc = 125 c 10 100 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 200 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 32 a 7.0 8.5 m v gs = 5 v, i d = 32 a 8.5 12 m table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs =0 - 2200 470 35 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 27.5 v, i d = 65 a v gs = 5 v (see figure 16 ) - 20 8 8 - nc nc nc
STD65N55LF3 electrical characteristics doc id 16371 rev 2 5/13 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 27 v, i d = 32 a, r g = 4.7 , v gs =10 v (see figure 15 ) - 10 25 - ns ns t d(off) t f turn-off delay time fall time - 50 10 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% - 80 320 a a v sd forward on voltage i sd =65 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =65 a, di/dt =100 a/s, v dd =30 v, tj=150 c (see figure 17 ) - 40 60 3 ns nc a
electrical characteristics STD65N55LF3 6/13 doc id 16371 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s ingle p u l s e am0 8 207v1 i d 150 100 50 0 0 2 v d s (v) 4 (a) 1 3 5 200 5v 6v 4v v g s =10v 6 am0 8 20 8 v1 i d 150 100 50 0 0 4 v g s (v) 8 (a) 2 6 200 v d s =7v am0 8 209v1 bv d ss -75 t j (c) (norm) -25 75 25 125 0.90 0.95 1.00 1.05 1.10 175 am0 8 210v1 r d s (on) 6. 8 0 6.60 6.40 6.20 0 20 i d (a) (ohm) 10 3 0 7.00 7.20 50 40 60 v g s =10v am0 8 211v1
STD65N55LF3 electrical characteristics doc id 16371 rev 2 7/13 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =27.5v i d =65a 25 3 0 3 5 am0 8 212v1 c 100 10 0.1 10 v d s (v) (pf) 1 ci ss co ss cr ss 1000 am0 8 21 3 v1 v g s (th) 0.6 0.4 0.2 0 -75 t j (c) (norm) -25 0. 8 125 25 75 175 1.0 1.2 am0 8 214v1 r d s (on) 1.2 1.0 0. 8 0.6 -75 t j (c) (norm) -25 75 25 125 175 1.4 1.6 1. 8 2.0 v g s =10v i d = 3 2a am0 8 215v1 v s d 0 20 i s d (a) (v) 10 50 3 0 40 0.45 0.55 0.65 0.75 0. 8 5 0.95 t j =-55c t j =175c t j =25c 60 am0 8 216v1
test circuits STD65N55LF3 8/13 doc id 16371 rev 2 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive wavefor m figure 18. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STD65N55LF3 package mechanical data doc id 16371 rev 2 9/13 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STD65N55LF3 10/13 doc id 16371 rev 2 dim. mm. . x a m p y t . n i m 0 4 . 2 0 2 . 2 a 0 1 . 1 0 9 . 0 1 a 3 2 . 0 3 0 . 0 2 a 0 9 . 0 4 6 . 0 b 0 4 . 5 0 2 . 5 4 b 0 6 . 0 5 4 . 0 c 0 6 . 0 8 4 . 0 2 c 0 2 . 6 0 0 . 6 d 0 1 . 5 1 d 0 6 . 6 0 4 . 6 e 0 7 . 4 1 e 8 2 . 2 e 0 6 . 4 0 4 . 4 1 e 0 1 . 0 1 5 3 . 9 h 1 l 0 8 . 2 1 l 0 8 . 0 2 l 1 0 6 . 0 4 l 0 2 . 0 r v2 0 o 8 o to-252 (dpak) mechanical data 006 8 772_g
STD65N55LF3 packaging mechanical data doc id 16371 rev 2 11/13 5 packaging mechanical data tape and reel shipment dpak footprint dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 16.4 18.4 0.645 0.724 n 50 1.968 t 22.4 0.881 base qty bulk qty 2500 2500 reel mechanical data dim. mm inch min. max. min. max. a0 6.8 7 0.267 0.275 b0 10.4 10.6 0.409 0.417 b1 12.1 0.476 d 1.5 1.6 0.059 0.063 d1 1.5 0.059 e 1.65 1.85 0.065 0.073 f 7.4 7.6 0.291 0.299 k0 2.55 2.75 0.100 0.108 p0 3.9 4.1 0.153 0.161 p1 7.9 8.1 0.311 0.319 p2 1.9 2.1 0.075 0.082 r 40 1.574 w 15.7 16.3 0.618 0.641 tape mechanical data all dimensions are in millimeters
revision history STD65N55LF3 12/13 doc id 16371 rev 2 6 revision history table 8. revision history date revision changes 20-oct-2009 1 first release. 12-oct-2010 2 document stat us promoted from preliminary data to datasheet.
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