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may 2011 doc id 17281 rev 1 1/17 17 STD65N3LLH5 stu65n3llh5 n-channel 30 v, 0.0061 ? , 65 a, dpak, ipak stripfet? v power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) very low switching gate charge high avalanche ruggedness low gate drive power losses application switching applications description this stripfet?v power mosfet technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit. figure 1. internal schematic diagram type v dss r ds(on) max i d STD65N3LLH5 30 v 0.0069 ? 65 a stu65n3llh5 30 v 0.0073 ? 65 a dpak 1 3 3 2 1 ipak table 1. device summary order code marking package packaging STD65N3LLH5 65n3llh5 dpak tape and reel stu65n3llh5 65n3llh5 ipak tube www.st.com
contents STD65N3LLH5, stu65n3llh5 2/17 doc id 17281 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 STD65N3LLH5, stu65n3llh5 electrical ratings doc id 17281 rev 1 3/17 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 30 v v gs gate-source voltage 22 v i d drain current (continuous) at t c = 25 c 65 a i d drain current (continuous) at t c = 100 c 46 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 260 a p tot total dissipation at t c = 25 c 50 w derating factor 0.3 w/c e as (2) 2. starting tj = 25 c, id = 32.5 a, vdd = 12 v. single pulse avalanche energy tbd mj t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal resistance symbol parameter value unit rthj-case thermal resistance junction-case max 3 c/w rthj-amb thermal resistance junction-case max 100 c/w t j maximum lead temperature for soldering purpose 275 c electrical characteristics STD65N3LLH5, stu65n3llh5 4/17 doc id 17281 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified). table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v,tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 22 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 1.8 3 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 32.5 a smd version 0.0061 0.0069 ? v gs = 10 v, i d = 32.5 a 0.0065 0.0073 ? v gs = 4.5 v, i d = 32.5 a smd version 0.0084 0.0093 ? v gs = 4.5 v, i d = 32.5 a 0.0088 0.0097 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 1290 240 32 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =15 v, i d = 65 a v gs =4.5 v ( figure 14 ) - 8 3.6 3.4 - nc nc nc r g intrinsic gate resistance f=1 mhz gate dc bias=0 test signal level = 20 mv open drain 1.7 ? STD65N3LLH5, stu65n3llh5 electrical characteristics doc id 17281 rev 1 5/17 table 6. switching on/off (resistive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =10 v, i d = 65 a, r g =4.7 ?, v gs = 10 v ( figure 13 and figure 18 ) - 8.6 11.2 - ns ns t d(off) t f turn-off delay time fall time v dd =10 v, i d = 25 a, r g =4.7 ?, v gs = 10 v ( figure 13 and figure 18 ) - 32.4 6 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5%. - 65 260 a a v sd forward on voltage i sd =32.5 a, v gs =0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =32.5 a, di/dt =100 a/s, v dd =20 v, ( figure 15 ) - 22 15 1.4 ns nc a electrical characteristics STD65N3LLH5, stu65n3llh5 6/17 doc id 17281 rev 1 2.1 electrical characterist ics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on resistance 1m s i d 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10m s 100 s tj=150c tc=25c s ingle p u l s e 100 100 am064 8 6v2 ) $ 6 $ 3 6 ! 6 6 6 6 ' 3 6 6 ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ! - v r d s (on) 6 4 2 0 3 7 i d (a) (m ? ) 5 9 8 10 12 14 v g s =10v 11 1 3 15 17 am06491v2 STD65N3LLH5, stu65n3llh5 electrical characteristics doc id 17281 rev 1 7/17 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |