53012 tkim/22912gb tkim tc-00002703 no. a2007-1/6 http://onsemi.com semiconductor components industries, llc, 2013 august, 2013 tf410 n-channel jfet 40v, 50 to 130 a, 0.11ms, usfp stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. applications ? impedance conversion, infrared sensor applications features ? ultrasmall package facilities miniaturization in end products : 1.0mm0.6mm0.27mm (max 0.3mm) ? small i gss : max --500pa (v gss = --20v, v ds =0v) ? small ciss : typ. 0.7pf (v ds = 10v, v gs =0v, f=1mhz) ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 40 v gate-to-drain voltage v gds --40 v gate current i g 10 ma drain current i d 1ma allowable power dissipation p d 30 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7055-003 ordering number : ena2007a product & package information ? package : usfp ? jeita, jedec : - ? minimum packing quantity : 10,000 pcs./reel packing type: tl marking electrical connection 1 : source 2 : drain 3 : gate usfp 0.6 0.2 0.1 0.1 0.27 0.05 0.05 1.0 0.8 0.11 0 to 0.02 0.15 0.175 12 3 12 3 tl 2 3 1 b lot no. lot no. 1 : source 2 : drain 3 : gate top view 1 2 3 TF410-TL-H
tf410 no. a2007-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max gate-to-drain breakdown voltage v (br)gds i g =--10 a, v ds =0v --40 v gate-to-source leakage current i gss v gs =--20v, v ds =0v --500 pa cutoff voltage v gs (off) v ds =10v, i d =1 a --1.4 --4.0 v drain current i dss v ds =10v, v gs =0v 50 130 a forward transfer admittance | yfs | v ds =10v, v gs =0v, f=1khz 0.05 0.11 ms input capacitance ciss v ds =10v, v gs =0v, f=1mhz 0.7 pf reverse transfer capacitance crss 0.3 pf ordering information device package shipping memo TF410-TL-H usfp 10,000pcs./reel pb free and halogen free i d -- v ds i d -- v ds drain-to-source voltage, v ds -- v drain-to-source voltage, v ds -- v drain current, i d -- a drain current, i d -- a i d -- v gs gate-to-source voltage, v gs -- v drain current, i d -- a v gs (off) -- i dss drain current, i dss -- a cutoff voltage, v gs (off) -- v it16761 012345 0 40 20 60 80 100 120 v gs =0v --0.4v --0.6v --0.8v --1.0v v gs =0v --0.2v --0.4v it16762 0 5 10 15 20 25 30 0 40 80 60 20 100 120 --0.2v --0.6v --0.8v --1.0v it16764 --2.0 --1.5 --1.0 --0.5 0 0 100 80 60 20 40 120 75 c v ds =10v 25 c ta= --25 c it16765 40 140 80 60 100 120 v ds =10v i d =1.0 a --2.0 --0.4 --1.4 --1.6 --1.8 --0.8 --0.6 --1.0 --1.2
tf410 no. a2007-3/6 crss -- v ds drain-to-source voltage, v ds -- v reverse transfer capacitance, crss -- pf ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- mw it16778 0 20 40 60 80 100 120 140 160 0 35 30 25 20 5 10 15 it16768 23 57 2 0.1 1.0 357 2 10 357 100 1.0 0.1 5 7 2 3 v gs =0v f=1mhz | y fs | -- i dss drain current, i dss -- a forward transfer admittance, | y fs | -- ms it16766 60 80 100 40 120 140 0.14 0.06 0.11 0.12 0.13 0.08 0.07 0.09 0.10 v ds =10v v gs =0v f=1khz ciss -- v ds drain-to-source voltage, v ds -- v input capacitance, ciss -- pf it16767 23 57 2 0.1 1.0 357 2 10 357 100 1.0 0.1 5 7 2 3 v gs =0v f=1mhz
tf410 no. a2007-4/6 taping speci cation TF410-TL-H
tf410 no. a2007-5/6 outline drawing land pattern example TF410-TL-H mass (g) unit (0.0005) mm unit: mm 0.95 0.25 0.3 0.2 0.2
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