b-58 01/99 j230, j231 n-channel silicon junction field-effect transistor audio amplifiers absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 40 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj230, SMPJ231 at 25c free air temperature: j230 j231 process nj16 static electrical characteristics min typ max min typ max unit test conditions gate source breakdown voltage v (br)gss C 40 C 40 v i g = C 1a, v ds = ? v gate reverse current i gss C 250 C 250 pa v gs = C 30 v, v ds = ? v gate operating current i g C 2 C 2 pa v ds = 20 v, i d = ? v gate source cutoff voltage v gs(off) C 0.5 C 3 C 1.5 C 5 v v ds = 20 v, i d = 1 a drain saturation current (pulsed) i dss 0.7 3 2 6 ma v ds = 20 v, v gs = ? v dynamic electrical characteristics common source forward g fs 1000 3500 1500 4000 s v ds = 20 v, v gs = ?v f = 1 khz transconductance common source output conductance g os 1.5 3 s v ds = 20 v, v gs = ? v f = 1 khz common source input capacitance c iss 44pfv ds = 20 v, v gs = ? v f = 1 mhz common source reverse c rss 11pfv ds = 20 v, v gs = ?v f = 1 mhz transfer capacitance equivalent short circuit input e n 830 830 nv/ hz v ds = 10 v, v gs = ?v f = 10 hz noise voltage 22 nv/ hz v ds = 10 v, v gs = ?v f = 1 khz 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-58
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