01/99 b-51 j111, j112, j113 n-channel silicon junction field-effect transistor absolute maximum ratings at t a = 25?c reverse gate source & reverse gate drain voltage C 35 v continuous forward gate current 50 ma continuous device power dissipation 360 mw power derating 3.27 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smpj111, SMPJ112, smpj113 at 25c free air temperature j111 j112 j113 process nj132 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss C 35 C 35 C 35 v i g = C 1a, v ds = ? v gate reverse current i gss C 1C 1C 1nav gs = C 15 v, v ds = ? v gate source cutoff voltage v gs(off) C 3 C 10 C 1 C 5 C 3 v v ds = 5 v, i d = 1 a drain saturation current (pulsed) i dss 20 5 2 ma v ds = 15 v, v gs = ? v drain cutoff current i d(off) C 1C 1C 1nav ds = 15 v, v gs = C 10 v dynamic electrical characteristics drain source on resistance r ds(on) 30 50 100 v gs = ? v, v ds = 0.1 v f = 1 khz drain gate capacitance c dg 555pfv ds = ? v, v gs = C 10 v f = 1 mhz source gate capacitance c gs 555pfv ds = ? v, v gs = C 10 v f = 1 mhz drain gate + source gate capacitance c gd + c gs 28 28 28 pf v ds = v gs = ? v f = 1 mhz switching characteristics typ typ typ turn on delay time t d(on) 777ns j111 j112 j113 rise time t r 662nsv dd 10 10 10 v turn off delay time t d(off) 20 20 20 ns v gs(off) C 12 C 7 C 5 v fall time t f 15 15 15 ns r l 800 1600 3200 choppers commutators analog switches 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-51
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