, li ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 triacs silicon bidirectional thyristors . .. designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies. ? blocking voltage to 800 volts ? glass passivated junctions for greater parameter uniformity and stability ? to-220 construction low thermal resistance, high heat dissipation and durability ? gate triggering guaranteed in three modes (mac218 series) or four modes (mac218a series) mac218 mac218a triacs 8 amperes rms 200 thru 800 volts mt2 o ' mt1 maximum ratings (tj = 25c unless otherwise noted.) (to-220ab) rating peak repetitive off-state voltageo) (gate open, tj = 25 to 125c) mac218-4, mac218a4 mac218-6, mac218a6 mac218-8, mac218a8 mac218-10, MAC218A10 on-state current rms (conduction angle = 360, tc = +80c) peak non-repetitive surge current (one full cycle, 60 hz, tc = 80c, preceded and followed by rated current) fusing current (t = 8.3 ms) peak gate power (tc = +80c, pulse width = 2 us) average gate power (tc = +80c, t = 8.3 ms) peak gate trigger current (pulse width = 1 us) operating junction temperature range storage temperature range symbol vdrm 't(rms) 'tsm |2t pgm pg(av) igtm tj tstg value 200 400 600 800 8 100 40 16 0.35 4 ^10 to +125 -40to+150 unit volts amps amps a2s watts watt amps c c 1. vqrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. quality semi-conductors
mac218 series mac218a series thermal characteristics characteristic thermal resistance, junction to case symbol rbjc max 2.2 unit c/w electrical characteristics (tc = 25c unless otherwise noted.) characteristic peak blocking current (vd = rated vdrm. gate open) tj = 25c tj = 125c peak on-state voltage (either direction) (ijm = 11.3 a peak; pulse width = 1 to 2 ms, duty cycle < 2%) gate trigger current (continuous dc) (vd = 12vdc, r|_ = 12q) trigger mode mt2(+), gate(+); mt2(+), gate(-); mt2(-), gate(-) mt2(-), gate(+) "a" suffix only gate trigger voltage (continuous dc) (main terminal voltage = 12 vdc, rl = 100 ohms) mt2(+), g(+) mt2(+), g(-) mt2(-), g(-) mt2(-), g(+) "a" suffix only (main terminal voltage = rated vdrm, rl = 10 kq, tj = +125c) mt2(+), g(+); mt2(-), g(-); mt2(+), g(-) mt2(-), g(+) "a" suffix only holding current (either direction) (vd = 24 vdc, gate open, initiating current = 200 ma) critical rate of rise of commutating off-state voltage (vd = rated vdrm, itm = 11 .3 a, commutating di/dt = 4.1 a/ms, gate unenergized, tc = 80c) critical rate of rise of off-state voltage (vrj = rated vdrm. exponential voltage rise, gate open, tj = 125c) symbol !drm vtm igt vgt ih dv/dt(c) dv/dt min ? ? ? 0.2 0.2 ~ ~ " typ ? 1.7 ? 0.9 0.9 1.1 1.4 ~ 5 100 max 10 2 2 50 75 2 2 2 2.5 50 " " unit ma ma volts ma volts ma v/ns v/us figure 1 ? current derating figure 2 ? power dissipation , , . . ?? 10| 1 1 1 1 1 1 1 1 1 1 1 1 1 <- ql^?j 1 1 1 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1.0 2.0 3.0 4.0 5.0 6.0 l-r(rms). rms on state current (amps) it(rms)rms on state current (amps) 7.0 8.0
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