sot-23 - l plastic-encapsulate mosfets cj / 3415 p-channel mosfet feature excellent r ds(on) , low gate charge,low gate voltage application load switch and in pwm applicatopns marking: r 15 high power and current handing capability maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current (t 10s) i d -4.0 a maximum power dissipation (t 10s) p d 0.3 5 w thermal resistance from junction to ambient r ja 357 /w operating junction temperature t j 150 storage temperature t stg -55 ~+150 so t -23 - / pulse d drain current (note1) i d m - 3 0 a 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max unit static parameters drain-source breakdown voltage v (br) dss v gs = 0v, i d =-250a -20 gate threshold voltage (note2) v gs(th) v ds =v gs , i d =-250a -0.3 -1 v v ds =0v, v gs =8v 10 gate-body leakage current i gss v ds =0v, v gs =4.5v 1 zero gate voltage drain current i dss v ds =-16v, v gs =0v -1 a v gs =-4.5v, i d =-4a 44 50 v gs =-2.5v, i d =-4a 52 60 drain-source on-state resistance(note 2 ) r ds(on) v gs =-1.8v, i d =-2a 64 7 3 m ? forward transconductance(note2) g fs v ds =-5v, i d =-4a 16 8 s dynamic parameters (note3) input capacitance c iss 1450 output capacitance c oss 205 reverse transfer capacitance c rss v ds =-10v,v gs =0v,f =1mhz 160 pf switching parameters (note3) total gate charge q g 17.2 gate-source charge q gs 1.3 gate-drain charge q gd v ds =-10v,v gs =-4.5v,i d =-4a 4.5 nc turn-on delay time t d(on) 9.5 turn-on rise time t r 17 turn-off delay time t d(off) 94 turn-off fall time t f v ds =-10v, v gs =-4.5v r gen =3 ? , r l =2.5 ? , 35 ns notes: 1. repetitive rating,pulse width lim ited by junction temperature. 2. pulse test : pulse width 300s, duty cycle 2%. 3. these parameters have no way to verify. drain-sou rce diode characteristics drain-source diode forward voltage(note 2 ) v d s v gs = 0v, i s = -1 a - 1 v maximum conti nuous drai n-source diode forward current i s - 4 a 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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