AM3826N these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds (on) (ohm) i d (a) 0.047 @ v gs = -4.5v 4.1 0.055 @ v gs = -2.5v 3.8 20 mosfet product summary ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature symbol typ max t <= 10 sec 93 110 steady state 130 150 thermal resistance ratings maximum junction-to-ambient a o c/w r thja parameter v f (v) diode forward voltage 20 0.48v @ 1.0a 1.0 schottky product summary v ka (v) i f (a) symbol maximum units v ds 20 v ka 20 v gs 8 t a =25 o c4.1 t a =70 o c3.3 i dm 8 i s 1.05 i f 0.5 i fm 8 t a =25 o c1.15 t a =70 o c0.7 t a =25 o c1.0 t a =70 o c0.6 t j , t stg -55 to 150 o c maximum power dissipation (schottky) a operating junction and storage temperature range p d w absolute maximum ratings (t a = 25 o c unless otherw ise noted) parame te r pulsed drain current (mosfet) b gate-source voltage (mosfet) reverse voltage (schottky) continuous drain current (t j =150 o c) (mosfet) a i d a drain-source voltage (mosfet) continuous source current (mosfet diode conduction) a average forward current (schottky) ma ximum p owe r dis s ipa t ion ( mosfet) a pulsed forward current (schottky) v d s g n-channel mosfet k a tsop-6 top view 1 2 34 k n/c d 6 5 g a s 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing . min typ max i f = 0.5 a 0.48 v i f = 0.5 a, t j = 125 o c 0.4 v v r = 30 v 0.1 v r = 30 v, t j = 75 o c 1 v r = 30 v, t j = 125 o c 10 junction capacitance c t v r = 10 v 31 pf forward voltage drop v f schottky specifications (t a = 25 o c unless otherwise noted) ma i rm maximum reverse leakage current test conditions symbol parameter limits unit min typ max gate-threshold voltage v gs(t h) v ds = v gs , i d = 250 ua 0.4 gate-body leakage i gss v ds = 0 v, v gs = +/-8 v 100 na v ds = 16 v, v gs = 0 v 1 v ds = 16 v, v gs = 0 v, t j = 55 o c 10 on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 5 a v gs = 4.5 v, i d = 4.1 a 0.047 v gs = 2.5 v, i d = 3.8 a 0.055 forward tranconductance a g fs v ds = 5 v, i d = 4.1 a 3 s diode forward voltage v sd i s = 1.05 a, v gs = 0 v 0.80 v total gate charge q g 7.5 gate-source charge q gs 0.6 gate-drain charge q gd 1.0 turn-on del ay ti me t d(on) 5 ri s e ti me t r 12 turn-off del ay ti me t d(of f ) 13 fall-time t f 7 mosfet specifications (t a = 25 o c unless otherwise noted) ua i dss zero gate voltage drain current static test conditions sym bol param eter lim its unit v dd = 5 v, r l = 5 ohm, v gen = 4.5 v, r g = 6 ohm ns drain-source on-state resistance a dynam ic b v ds = 10 v, v gs = 4.5 v, i d = 4.1 a nc ? r ds(on) 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com AM3826N product specification
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