, ij nc, 20 stern ave. springfield, new jersey 07081 u.s.a. power mosfet telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 product summary vds(v) rds(on) (ty qg (max.) (nc) qgs(nc) qgd (nc) configuration 200 vgs=10v 0.80 14 3.0 7.9 single irf620, sjhf620 to-220ab d j, o s n-channel mosfet features ? dynamic dv/dt rating ? repetitive avalanche rated ? fast switching ? ease of paralleling ? simple drive requirements the to-220ab package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 w. the low thermal resistance and low package cost of the to-220ab contribute to its wide acceptance throughout the industry. ordering information package lead (pb)-free snpb to-220ab IRF620PBF sihf620-e3 irf620 sihf620 absolute maximum ratings o'c = 25 c, unless otherwise noted) parameter drain-source voltage gate-source voltage continuous drain current tc = 25 c vyyutluv mnoo tc = 1 00 c pulsed drain current3 linear derating factor single pulse avalanche energyb repetitive avalanche current3 repetitive avalanche energy3 maximum power dissipation t0 = 25 "c peak diode recovery dv/dtc operating junction and storage temperature range soldering recommendations (peak temperature) mounting torque for 10s 6-32 or m3 screw symbol vds vgs id 'dm eas iar ear pd dv/dt tj, tstg limit 200 20 5.2 3.3 18 0.40 110 5.2 5.0 50 5.0 -55 to + 150 300d 10 1.1 unit v a w/c mj a mj w v/ns c ibf ? in n-m notes a. repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. vdd = 50 v, starting tj = 25 c, l = 6.1 mh, rg = 25 q, ias = 5.2 a (see fig. 12). c. isd < 5.2 a, dl/dt < 95 a/us, vdd < vds, tj < 150 c. d. 1.6 mm from case. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf620, sihf620 thermal resistance ratings parameter maximum junction-to-ambient case-to-sink, flat, greased surface maximum junction-to-case (drain) symbol rthja rthcs rthjc typ. - 0.50 - max. 62 - 2.5 unit c/w specifications (tj = 25 c, unless otherwise noted) parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage vds temperature coefficient gate-source threshold voltage gate-source leakage zero gate voltage drain current drain-source on-state resistance forward transconductance vds avds/tj vqs(th) bss idss rcs(on) 9fs vgs = 0 v, id = 250 ua reference to 25 c, id = 1 ma vds = vgs, id = 250 ua vgs = 20 v vds = 200 v, vgs = 0 v vds = 160 v, vgs = 0 v, tj = 125 c vgs = 10v !d = 3.1ab vds = 50v, b = 3.1 a 200 - 2.0 - - - - 1.5 - 0.29 - - - - - - - - 4.0 100 25 250 0.80 - v v/c v na ua n 5 dynamic input capacitance output capacitance reverse transfer capacitance total gate charge gate-source charge gate-drain charge turn-on delay time rise time turn-off delay time fall time internal drain inductance internal source inductance q55 coss cres qg qgs q9d td(on) tr 'd(off) tf ld ls vgs - 0 v, vds = 25 v, f = 1 .0 mhz, see fig. 5 vrs-10v b -4.8 a, vds -160v, vgs-tuv see fig. 6 and 13b vdd=100v, id = 4.8 a, rg = 18 n, rd = 20o, see fig. 10b between lead, 6 mm (0.25") from s\ 4 package and center of (i ni tj die contact vll^* - - - - - - - - - - - - 260 100 30 - - - 7.2 22 19 13 4.5 7.5 - - - 14 3.0 7.9 - - - - - - pf nc ns nh drain-source body diode characteristics continuous source-drain diode current pulsed diode forward current3 body diode voltage body diode reverse recovery time body diode reverse recovery charge forward turn-on time is ism vsd trr qrr ton mosfet symbol showing the /fjzik integral reverse (,(j j*]_t) p - n junction diode xtif tj = 25 c, ls = 5.2 a, vgs = 0 v? - - - - - - - - 150 0.91 5.2 18 1.8 300 1.8 a v ns uc intrinsic turn-on time is negligible (turn-on is dominated by ls and ld)
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