![]() |
|
If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
Datasheet File OCR Text: |
this is information on a product in full production. july 2012 doc id 15682 rev 3 1/12 12 stp78n75f4 n-channel 75 v, 0.0092 typ., 78 a stripfet? deepgate? power mosfet in to-220 package datasheet ? production data features n-channel enhancement mode 100% avalanched rated low gate charge very low on-resistance application switching applications description this device is an n-channel power mosfet developed using st?s stripfet? deepgate? technology. the device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. figure 1. internal schematic diagram type v dss r ds(on) max i d stp78n75f4 75 v < 0.011 78 a to-220 1 2 3 tab ! - v $ 4 ! " ' 3 table 1. device summary order codes marking package packaging stp78n75f4 78n75f4 to-220 tube www.st.com obsolete product(s) - obsolete product(s)
contents stp78n75f4 2/12 doc id 15682 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 obsolete product(s) - obsolete product(s) stp78n75f4 electrical ratings doc id 15682 rev 3 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 75 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 78 a i d drain current (continuous) at t c = 100 c 55 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 312 a p tot total dissipation at t c = 25 c 150 w derating factor 1 w/c e as (2) 2. starting t j = 25 c, i d = 35 a, v dd = 50 v single pulse avalanche energy 185 mj t stg storage temperature ? 55 to 175 c t j operating junction temperature table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-a thermal resistance junction-ambient max 62.5 c/w obsolete product(s) - obsolete product(s) electrical characteristics stp78n75f4 4/12 doc id 15682 rev 3 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 75 v i dss zero gate voltage drain current (v gs = 0) v ds = 75 v 1 a v ds = 75 v,t c =125 c 100 a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 39 a 0.0092 0.011 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 25 v, f = 1 mhz, v gs = 0 5015 pf c oss output capacitance - 382 - pf c rss reverse transfer capacitance 218 pf q g total gate charge v dd = 37.5 v, i d = 78 a, v gs = 10 v (see figure 14) 76 nc q gs gate-source charge - 23 - nc q gd gate-drain charge 18.5 nc table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 37.5 v, i d = 39 a r g =4.7 v gs = 10 v (see figure 13) - 25 33 - ns ns t d(off) t f turn-off-delay time fall time - 61 14 - ns ns obsolete product(s) - obsolete product(s) stp78n75f4 electrical characteristics doc id 15682 rev 3 5/12 table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd source-drain current - 78 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 312 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 78 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 78 a, v dd = 60 v di/dt = 100 a/s, t j = 150 c (see figure 15) - 67 183 5.5 ns nc a obsolete product(s) - obsolete product(s) electrical characteristics stp78n75f4 6/12 doc id 15682 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on-resistance ) $ 6 $ 3 6 ! / p e r a t i o n i n t h i s a r e a i s , i m i t e d b y m a x 2 $ 3 o n ? s m s m s 4 j ? # 4 c ? # 3 i n l g e p u l s e ! - v 6 6 6 6 ' 3 6 ) $ 6 $ 3 6 ! ! - v ) $ 6 ' 3 6 ! 6 $ 3 6 ! - v " 6 $ 3 3 4 * ? # n o r m ) $ ? ! ! - v 2 $ 3 o n ) $ ! m / h m 6 ' 3 6 ! - v obsolete product(s) - obsolete product(s) stp78n75f4 electrical characteristics doc id 15682 rev 3 7/12 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized on-resistance vs temperature figure 11. normalized gate threshold voltage vs temperature figure 12. source-drain diode forward characteristics 6 ' 3 1 g n # 6 6 $ $ 6 ) $ ! ! - v # 6 $ 3 6 p & |