cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 1/6 hbnpz1ns6 r c y s t ek product s pecification general purpose npn / pnp epitaxial planar transistors (dual transistors) HBNPZ1NS6R features ? mounting possible with sot-323 automatic mounting machines. ? transistor elements are indepe ndent, eliminating interference. ? mounting cost and area can be cut in half. ? pb-free package. equivalent circuit outline HBNPZ1NS6R sot-363r eiaj:sc-8 8 /sc-7 0 - 6 jedec: sot - 36 3 absolute maximum ratings (ta=25 c) limits parameter symbol tr1 (npn) tr2 (pnp) unit collecto r -b ase v o ltage v cbo 50 -50 v collector-emitter voltage v ceo 45 -45 v emitter-base voltage v ebo 6 -5 v collector current i c 150 -150 ma power dissipation pd 200(total) *1 mw junction temperature tj 150 c storage temperature tstg -55~+150 c not e : * 1 15 0m w per el em ent m u st not be excee ded . http://
cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 2/6 hbnpz1ns6 r c y s t ek product s pecification characteristics (ta=25 c) ? tr1 (npn) symbol min. typ. max. unit test conditions bv cbo 50 - - v i c =100 a bv ceo 45 - - v i c =1ma bv ebo 6 - - v i e =50 a i cbo - - 15 na v cb =30v i ebo - - 100 na v eb =5v *v ce(sat) - 0.2 0.4 v i c =50ma, i b =5ma *h fe 200 - 600 v ce =6v, i c =1ma f t 80 180 - mhz v ce =12v, i c =2ma, f=100mhz cob - 2 3.5 pf v cb =12v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2% ? tr2 (pnp) symbol min. typ. max. unit test conditions bv cbo -50 - - v i c =-50 a bv ceo -45 - - v i c =-1ma bv ebo -5 - - v i e =-50 a i cbo - - -15 na v cb =-30v i ebo - - -100 na v eb =-4v *v ce(sat) - -0.25 -0.5 v i c =-50ma, i b =-5ma *h fe 200 - 600 v ce =-6v, i c =-1ma f t 60 140 - mhz v ce =-12v, i c =-2ma, f=100mhz cob - 4 5 pf v cb =-12v, f=1mhz *pulse test: pulse width 380 s, duty cycle 2%
cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 3/6 hbnpz1ns6 r c y s t ek product s pecification characteristic curves ? tr1 (npn) c ur r e nt g a i n vs c ol l e c t or c ur r e nt 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t --- ic (ma ) current gain--- hfe hfe@vce=6v s a t ur a t i on v ol t a ge vs c ol l e c t or c ur r e nt 10 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t --- ic (ma ) saturation voltage-(mv) vce(sat)@ic=10ib s a t ur a t i on v ol t a ge vs c ol l e c t or c ur r e nt 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t ---ic (ma ) saturation voltage---(mv) vbe(sat)@ic=10ib c ut of f f r e que nc y vs c ol l e c t or c ur r e nt 0.1 1 1 10 100 c o l l e c t o r c u rre n t ---ic (ma ) cutoff frequency---ft(ghz) ft@vce=12v
cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 4/6 hbnpz1ns6 r c y s t ek product s pecification ? tr2 (pnp) c ur r e nt g a i n vs c ol l e c t or c ur r e nt 10 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t ---ic (ma ) current gain--- hfe hfe@vce=6v s a t ur a t i on v ol t a ge vs c ol l e c t or c ur r e nt 10 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t ---ic (ma ) saturation voltage---(mv) vce(sat)@ic=10ib s a t ur a t i on v ol t a ge vs c ol l e c t or c ur r e nt 100 1000 0. 1 1 10 100 1000 c o l l e c t o r c u rre n t ---ic (ma ) saturation voltage---(mv) vbe(sat)@ic=10ib c ut of f f r e que nc y vs c ol l e c t or c ur r e nt 0.1 1 1 10 100 c o l l e c t o r c u rre n t ---ic (ma ) cutoff frequency---ft(ghz) ft@vce=12v p o w e r d e ra t i ng c u rve s 0 50 10 0 15 0 20 0 25 0 0 5 0 1 00 15 0 20 0 a m b i en t t em p er at u r e- - - t a ( ) power dissipation---pd(mw ) d ual single
cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 5/6 hbnpz1ns6 r c y s t ek product s pecification reel dimension carrier tape dimension
cys t ech electronics corp. s pec. no. : c901 s6r issued date : 20 09.06.05 revised date : 2 0 1 1 .02.22 page no. : 6/6 hbnpz1ns6 r c y s t ek product s pecification sot-363 dimension style: pin 1. emitter1 (e1) pin 2. base1 (b1) pin 3. collector2 (c2) pin 4. emitter2 (e2) pin 5. base2 (b2) pin 6. collector1 (c1) 6-lead sot-363r plastic surface mounted package cystek package code: s6r marking: bf device code millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.900 1.100 0.035 0.043 e1 2.150 2.450 0.085 0.096 a1 0.000 0.100 0.000 0.004 e 0.650 typ 0.026 typ a2 0.900 1.000 0.035 0.039 e1 1.200 1.400 0.047 0.055 b 0.150 0.350 0.006 0.014 l 0.525 ref 0.021 ref c 0.080 0.150 0.003 0.006 l1 0.260 0.460 0.010 0.018 d 2.000 2.200 0.079 0.087 0 8 0 8 e 1.150 1.350 0.045 0.053 notes : 1 .controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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