advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 80v single drive requirement r ds(on) 90m fast switching performance i d 15a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a 62.5 /w rthj-a maximum thermal resistance, junction-ambient 110 /w data and specifications subject to change without notice 200908192 maximum thermal resistance, junction-ambient (pcb mount) 3 thermal data parameter storage temperature range total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 linear derating factor 0.28 continuous drain current, v gs @ 10v 9 pulsed drain current 1 50 gate-source voltage + 25 continuous drain current, v gs @ 10v 15 parameter rating drain-source voltage 80 1 ap9987gh/j rohs-compliant product advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. g d s the to-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (AP9987GJ) are available for low-profile applications. g d s to-251(j) g d s to-252(h)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 80 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.09 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 90 m ? v gs =4.5v, i d =7a - - 105 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =5v, i d =10a - 15 - s i dss drain-source leakage current v ds =80v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =64v ,v gs =0v - - 250 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =10a - 11 18 nc q gs gate-source charge v ds =64v - 3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 6 - nc t d(on) turn-on delay time 2 v ds =40v - 8 - ns t r rise time i d =10a - 12 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 19 - ns t f fall time r d =4 -3- ns c iss input capacitance v gs =0v - 980 1570 pf c oss output capacitance v ds =25v - 75 - pf c rss reverse transfer capacitance f=1.0mhz - 50 - pf r g gate resistance f=1.0mhz - 1.1 1.7 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.2 v t rr reverse recovery time 2 i s =10a, v gs =0 v ,-33-ns q rr reverse recovery charge di/dt=100a/s - 44 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board this product is sensitive to electrostatic discharge, pl ease handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any pro duct or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any pro ducts herein to improve reliability, function or design. 2 ap9987gh/j
ap9987gh/j fig 1. typical output characteristics fig 2. typical output characteristics t rr q rr fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 10 20 30 036912 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c v g =3.0v 10v 7.0v 5.0v 4.5v 60 100 140 180 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =7a t c =25 o c 0.4 0.7 1.0 1.3 1.6 1.9 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics q rr fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 ap9987gh/j q v g 4.5v q gs q gd q g charge 0 4 8 12 16 0 5 10 15 20 25 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =10a v ds =40v v ds =50v v ds =64v 10 100 1000 10000 1 5 9 1317212529 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) 100us 1ms 10ms 100ms dc t c =25 o c single pulse 0 10 20 30 0246 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v operation in this area limited by r ds(on)
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