sot-563 digital transistors (built-in resistors) EMD2 general purpose transistors (dual transistors) features z both the dta124e chip and dtc124e chip in a package z mounting possible with sot-56 3 automatic mounting machines z transistor elements are independ ent, eliminating interference 1 z mounting cost and area be cut in half marking: d2 equivalent circuit absolute maximum ratings(ta=25 ) parameter symbol limits unit supply voltage v cc 50 v input voltage v in -10~40 v i o 30 output current i c(max) 100 ma power dissipation pd 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v, i o =100 a input voltage v i(on) 3 v v o =0.2v, i o =5ma output voltage v o(on) 0.1 0.3 v i o /i i =10ma/0.5ma input current i i 0.36 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 56 v o =5v, i o =5ma input resistance r 1 15.4 22 28.6 k ? - resistance ratio r 2 /r 1 0.8 1 1.2 - transition frequency f t 250 mhz v ce =10v, i e =5ma, f=100mhz 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2012
0.4 0.8 1.2 1.6 2.0 0.01 0.1 1 10 0.1 1 10 100 0.1 1 10 100 110100 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 0 4 8 12 16 20 0 2 4 6 8 10 0.1 1 10 100 1 10 100 1000 t a =100 t a =25 off characteristics 3 0.3 0.03 v cc =5v output current i 0 (ma) input voltage v i(off) (v) 30 3 0.3 t a =100 on characteristics t a =25 v o =0.2v 3 0.3 30 output current i o (ma) input voltage v i(on) (v) t a =25 t a =100 300 30 30 3 v o(on) ?? i o i o /i i =20 output voltage v o(on) (mv) output current i o (ma) EMD2(npn) p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) output capacitance c o (pf) f=1mhz t a =25 c o ?? v r reverse bias voltage v r (v) t a =100 t a =25 30 v o =5v 300 3 3 0.3 30 g i ?? i o output current i o (ma) dc current gain g i 5 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2012
-0.1 -1 -10 -0.1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -0 -4 -8 -12 -16 -20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -1 -10 -10 -100 -1000 on characteristics t a =25 t a =100 v o =-0.2v -3 -0.3 -30 output current i o (ma) input voltage v i(on) (v) EMD2(pnp) off characteristics t a =100 t a =25 -3 -0.3 -0.03 v cc =-5v output current i o (ma) input voltage v i(off) (v) -0.3 -3 -30 30 t a =25 t a =100 v o =-5v 300 3 -3 -0.3 -30 g i ?? i o output current i o (ma) dc current gain g i p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) -300 -30 -30 -3 v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2012
|
