CHM8958JPT c h e n m k o e n t e r p r i s e c o . , l t d surface mount dual enhancement mode field effect transistor n-channel: voltage 30 volts current 7 ampere a p p l i c a t i o n f e a t u r e * super high dense cell design for extremely low r ds(on) . construction * n-channel & p-channel enhancement in the package * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2006-02 * lead free product is acquired. * high power and current handing capability. c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter n-channel units v dss drain-source voltage v v gss gate-source voltage v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 2000 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 62.5 7.0 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 20 d i m e n s i o n s i n m i l l i m e t e r s so-8 * small flat package. (so-8 ) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting so-8 1 8 5 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 4 4 1 5 8 s 1 s 2 d 1 d 1 g 1 g 2 d 2 d 2 p-channel: voltage 3 0 volts current 5.2 ampere 30 20 -5.2 -20 p-channel -30 20
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM8958JPT ) n-channel electrical characteristics t a = 25c unless otherwise noted s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 28 o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =5v , i d = 7a r ds(on) static drain-source on-resistance m w vgs=10v, id=7a switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 15v i d = 1.0a , v g s = 10 v 20 t r rise time 10 1 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 250 a n a 30 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 24 v, v v gs gs = 20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 v vgs=4.5v, id=6a 50 t f fall time 10 q g total gate charge 2.5 vds=15v, id=5.8a vgs=10v turn-off time t off rgen= 2.7 w (note 2) (note 4) 3 25 nc 9 4 24 4 drain-source diode characteristics and maximum ratings 12.3 i v sd drain-source diode forward current drain-source diode forward voltage i s = 1.3a , v g s = 0 v 1.3 1.2 a v (note 1) (note 2) 40 22 30 1.5 16 i gssr s
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM8958JPT ) p-channel electrical characteristics t a = 25c unless otherwise noted s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s -1 o f f c h a r a c t e r i s t i c s b v d s s drain-source breakdown voltage 52 v o n c h a r a c t e r i s t i c s gs g = 0 v, i d fs forward transconductance v = -250 a ds n a -30 = -5v v n a , i i d dss s = -5a zero gate voltage drain current i r v ds(on) ds static drain-source on-resistance gate-body leakage m w = vgs=-10v, id=-5a gate-body leakage -24 v, v v gs gs = 20v, = 0 v v ds = 0 v switching a characteristics +100 -100 v gs = -20v, v q gs ds gate-source charge = 0 v q gd gate-drain charge t on v turn-on time gs ns (th) v gate threshold voltage dd v = -15v ds i d = v = -1.0a gs , , i v d g = -250 a s = -10 v 25 t r rise time -1 10 v vgs=-4.5v, id=-4a 110 t f fall time 50 q g total gate charge 2.3 vds=-15v, id=-5.3a vgs=-10v turn-off time t off rgen= 6 w (note 2) (note 4) 10 nc 12 5 57 24 drain-source diode characteristics and maximum ratings 11 v sd drain-source diode forward current drain-source diode forward voltage i s = -1.3a , v g s = 0 v -1.3 -1.2 a v (note 1) (note 2) 80 42 gssf i i gssr 1.7 60 s -3 14
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM8958JPT ) n-channel typical electrical characteristics 0 0.5 1.0 0 4 8 20 2.0 12 16 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics 25 1.5 i , dr a in current (a) d 0 5 10 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 2.0 2.5 3.0 3.5 4.0 4.5 15 20 10 0 3 6 9 12 15 0 2 4 6 8 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) f i g u r e 4 . on-resistance variation with temperature id=10a vgs=7v -50 0 50 100 150 200 temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs id=5.8a vds=15v 1.5 v gs= 3.0v v gs= 10,6,4.5,4,3.5v
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM8958JPT ) p-channel typical electrical characteristics 0 1.0 2.0 3.0 4.0 5.0 0 6 12 30 6.0 18 24 -v , drain-to-source voltage (v) -i , dr a in current (a) ds d figure 1. output characteristics -i , dr a in current (a) d -vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 10 0 3 6 9 12 0 2 4 6 8 qg , total gate charge (nc) -vgs , gate to source voltage (v) figure 3. gate charge id=-5.3a vds=-15v temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id= 250 u a vds= v gs 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) f i g u r e 4 . on-resistance variation with temperature id=10a vgs=5v -50 0 50 100 150 200 1.5 2.0 2.5 3.0 3.5 4.0 4.5 15 0 3 6 9 12 v gs= - 3.0v v gs= -3.5v v gs= -4.0v v gs= -4.5v v gs= -5.0v v gs= -10,-6vv
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