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  unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1 . 3 + 0 . 1 - 0 . 1 0 . 1 + 0 . 0 5 - 0 . 0 2 0.475 0.375 0 . 3 + 0 . 0 5 - 0 . 0 5 0.85 +0.05 -0.05 1.0max %? mark ing ma rking a8 %? features %? low diode capacitance. %? low diode forw ard re sis tance. %? absolut e maxim um rating s t a = 2 5 ! parameter sym bol rating unit con tinuous reve rse voltage v r 50 v con tinuous forw ard curre nt i f 50 m a total pow er dissipation t s = 90 ! p tot 500 m w storage tem pera ture t stg -65 to +150 ! junct ion tem pera ture t j 150 ! thermal resis tance f rom junction t o soldering poin t rth j-s 85 k/w %? el ectrical characteristics t a = 2 5 ! parameter sym bol testc onditons min typ ma x unit forw ard v oltage v f i f = 50 m a 0.95 1.1 v rev erse voltage v r i r = 10 ? a 50 v rev erse current i r v r = 50 v 100 na v r = 0; f = 1 mh z 0.4 pf v r = 1 v ; f = 1 mhz 0.3 0.55 pf v r = 5 v ; f = 1 mhz 0.2 0.35 pf i f = 0.5 m a; f = 100 m hz 25 40 ? i f = 1 m a; f = 100 m hz 14 25 ? i f = 10 m a; f = 100 m hz 3 5 ? r d cd diode forw ard re sis tance diode c apacitance kap50-03 (bap50-03) product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
%? t y pical ch aracteristics tj = 25 ! ; f = 100 mhz. tj = 25 ! ; f = 100 mhz. dio de zer o bi ased a nd i nserte d i n seri es with a 5 0 ? stri pl i ne ci rcui t. tam b = 25 ! . (1) if = 10 m a. (2) i f = 1 m a. (3) i f = 0.5 m a. dio de i nserte d i n seri es with a 5 0 ? stri pl i ne ci rcui t and bi ased vi a the anal yzer t ee ne tw ork. tam b = 25 c. fig. 1 fo rw ard re si sta nce as a fu nct ion of f orw ard c urren t; typic al val ues . fig. 2 dio de c apa ci tanc e as a fu nct ion of re verse volt age ; typic al val ues . fig. 3 in sert ion los s (| s21| 2) of the dio de a s a func tion of f requ enc y; typical values . fig. 4 is ola tion (|s2 1|2 ) of t he d iod e as a fu nct ion of f requ enc y; typical value s. sales@twtysemi.com 2 of 2 http://www.twtysemi.com kap50-03 (bap50-03) product specification 4008-318-123


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