n-channel power mosfet semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2613 issue 1 page 1 of 3 IRFM540 ? low r ds(on) mosfet transistor in a isolated hermetic metal package ? designed for switching, power supply, motor control and amplifier applications ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) vds drain ? source voltage 100v v gs gate ? source voltage 20v i d continuous drain current t c = 25c 18a i d continuous drain current t c = 100c 12a i dm pulsed drain current (1) 72a p d total power dissipation at t c = 25c 78w derate above 25c 0.62w/c t j junction temperature range -55 to +150c t stg storage temperature range -55 to +150c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 1.6 c/w notes notes notes notes (1) repetitive rating: pulse width limited by maximum j unction temperature (2) pulse width 300us, 2%
n-channel power moset IRFM540 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2613 issue 1 page 2 of 3 electrical characteristics (t j = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units bv dss drain-source breakdown voltage v gs = 0 i d = 1.0ma 100 v j t dss bv ? ? temperature coefficent of breakdown voltage reference to 25c i d = 1.0ma 0.1 v/c v gs = 10v i d = 12a 0.092 r ds(on) (2) static drain-source on-state resistance v gs = 10v i d = 18a 0.11 v gs(th) gate threshold voltage v ds = v gs i d = 250 a 2 4 v g fs (2) forward transconductance v ds 15v i ds = 12a 9.1 s( ) v gs = 0 v ds = 0.8bv dss 25 i dss zero gate voltage drain current t j = 125c 250 a i gss forward gate-source leakage v gs = 20v 100 i gss reverse gate-source leakage v gs = -20v -100 na dynamic characteristics c iss input capacitance v gs = 0 1660 c oss output capacitance v ds = 25v 550 c rss reverse transfer capacitance f = 1.0mhz 120 pf q g total gate charge v gs = 10v 30 59 q gs gate-source charge i d = 18a 2.4 12 q gd gate-drain charge v ds = 0.5bv dss 12 30.7 nc t d(on) turn-on delay time 21 t r rise time 145 t d(off) turn-off delay time 64 t f fall time v dd = 50v i d = 18a r g = 9.1 105 ns source-drain diode characteristics i s continuous source current 18 i sm (1) pulse source current 72 a i s = 18a t j = 25c v sd (2) diode forward voltage v gs = 0 1.5 v t rr (2) reverse recovery time i s = 18a t j = 25c 400 ns q rr (2) reverse recovery charge v dd 50v di/dt = 100a/ s 2.4 c
n-channel power moset IRFM540 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2613 issue 1 page 3 of 3 mechanical data dimensions in mm (inches) to - 2 54 a a pin 1 - drain pin 2 - source pin 3 - gate 1 2 3 13.59 (0.535)13.84 (0.545) 3.53 (0.139)3.78 (0.149) dia. 6.32 (0.249)6.60 (0.260) 1.02 (0.040)1.27 (0.050) 30 . 35 ( 1 . 195 ) 31 . 40 ( 1 . 235 ) 16 . 89 ( 0 . 665 ) 17 . 40 ( 0 . 685 ) 13 . 59 ( 0 . 535 ) 13 . 84 ( 0 . 545 ) 20 . 07 ( 0 . 790 ) 20 . 32 ( 0 . 800 ) 3.81 (0.150) bsc 0.89 (0.035)1.14 (0.045) 3.81 (0.150) bsc
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