T16M35T600B maximum ratings (tj= 25 unless otherwise noticed) features minimizes snubber networks for protection blocking voltage to 600 volts on-state current rating of 16 amperes rms high surge current capability 150 amperes glass passivated junctions for reliability and uniformity operational in three quadrants, q1, q2, and q3 pb free package mechanical data case: molded plastic weight: 0.07 ounces, 2.0 grams triacs sillicon bidirectional thyristors triacs 16 amperes rms 600 volts rating symbol value unit peak repetitive offC state voltage (1) ( t j = -40 to 125 , sine wave, 50 to 60 hz; gate open) v drm , v rrm 600 volts on-state rms current ( t c = +80 ) full cycle sine wave 50 to 60 hz i t(rms) 16 amp peak non-repetitive surge current (one full cycle s ine wave, 60 hz, t j = 25 ) preceded and followed by rated current. i tsm 150 amps circuit fusing consideration (t = 8.3 ms) i t 93 a s peak gate power ( t c = +80 , tp 1.0 us) Q p gm 20 watt average gate power ( t c = +80 , t=8.3 ms) p g(av) 0.5 watt operating junction temperature range t j -40 to +125 storage temperature range tstg -40 to +150 2 2 notice: (1) v drm and v rrm for all types can be applied on a continuous basis. blocking voltages shall not be tested with a con stant current source such that the voltage ratings of the devices are exce eded. rev. 1, may-2007, ktxc21 semiconductor lite-on to-220ab all dimensions in millimeter to-220ab dim. min. max. ac d ef g h b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 2.79 n m l k j i 1.14 2.29 0.67 0.40 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 1 main terminal 1 2 main terminal 2 3 gate 4 main terminal 2 pin assignment a b c k j i g f e d n m l pin 1 3 2 h h
rating and characteristic curves T16M35T600B characteristic symbol value unit thermal resistance - junction to case - junction to amb ient r thjc r thja 2.0 62.5 / w maximum lead temperature for soldering purposes 1/8 " from case for 10 seconds t l 260 characteristics symbol min typ max unit peak reptitive forward or reverse blocking current t j =25 (v d =rated v drm, v rrm; gate open) t j =125 i drm i rrm ---- ---- ---- ---- 0.01 2.0 ma peak on-state voltage (i tm= 21 a peak @ tp 2.0 ms, duty cycle 2%) Q Q v tm ---- 1.2 1.6 volts gate trigger current (continuous dc) (v d = 12vdc; r l = 100 ohms) i gt1 i gt2 i gt3 5.0 5.0 5.0 12 16 20 35 35 35 ma gate trigger voltage (continuous dc) (v d = 12 vdc; r l =100 ohms) v gt1 vgt2 vgt3 0.5 0.5 0.5 0.75 0.72 0.82 1.5 1.5 1.5 volts holding current (v d = 12 v, initiating current = 150 ma, gate open) i h ---- 20 50 ma latching current (v d = 12 v, i g = 35 ma) i l ---- ---- ---- 25 40 24 50 80 50 ma critical rate of change of commutation current (v d = rated vdrm , i tm = 6.0 a, commutating dv/dt = 24 v/ms, gate unenergized,t c = 125 ,f = 250 hz, snubber: c l = 10 uf, l l =40 mh) di/dt(c) 15 ---- ---- a/ms critical rate of rise of commutation voltage (v d = 67% vdrm , exponential waveform, t c = 125 ) dv/dt 600 ---- ---- v/us repettive critical rate of rise of on-state current ipk= 50a, pw=40 us; dig/dt = 200ma/us; f =60hz di/dt --- ---- 10 a/us thermal characteristics electrical characteristics (t j =25 unless otherwise noted, electrical apply in both di rections) off characteristics on characteristics dynamic characteristics
quadrant definitions all polarities are referenced to mt1 whith in -phase signal (using standard ac lines) qu adrants i and iii are used rating and characteristic curves T16M35T600B
rating and characteristic curves T16M35T600B
rating and characteristic curves t16m35t-b series specifications mentioned in this publication are su bject to change without notice.
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