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fig. 1 - current ratings characteristic s fig. 2 - forward voltage drop characteristics fig. 3 - total power loss characteristics fig. 4 - maximum non-repetitive surge current fig. 5 - maximum non-repetitive surge current 60 80 100 120 140 160 0 5 10 15 20 25 30 120 (rect) m t 25 s e r i es total output current (a) m a x i m u m a ll o w a b l e c a s e t e m pe r a t u r e ( c) 1 10 100 1000 00.511.522.533.54 instantaneous forward voltage (v) i n s t a n t a n e o u s f o r w a r d c u r r e n t ( a ) m t 25 s e r i e s per junction t = 15o c t = 25c j j 0 25 5 0 75 100 125 150 maximum allowable ambient temperature ( c) 1 0 k / w 7 k / w 5 k / w 4 k / w 3 k / w 2 k / w 1 k / w r = 0 . 7 k / w - d e l t a r t h s a 0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 120 (rect) total output current (a) ma x i mu m t o t a l p o w e r l o s s ( w) m t 2 5 s e r i e s t = 150c j 80 100 120 140 160 180 200 220 240 260 280 300 320 1 10 100 peak hal f sine wave forward curr ent (a) number of equal amplitude half cycle current pulses (n) m t 25 s e r i es initial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 80 120 160 200 240 280 320 360 400 0.01 0.1 1 peak hal f si ne wav e fo rward cur rent (a) pulse train duration (s) maximum non repetitive surge current m t 2 5 s e r i e s initial t = 150 c no voltage reapplied rated v reapplied rrm versus pulse train duration. j               5 -g 
    

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fig. 6 - current ratings characteristics fig. 7 - forward voltage drop characteristics fig. 8 - total power loss characteristics fig. 9 - maximum non-repetitive surge current fig. 10 - maximum non-repetitive surge current 50 70 90 110 130 150 0 5 10 15 20 25 30 35 40 120 (rect) m t 35 s e r i es max i mum all o w abl e c ase temperat ure ( c) total output current (a) 1 10 100 1000 00.511.522.533.54 instantaneous forward voltage (v) in stan taneou s forw ard c urren t (a) m t 35 s e r i e s t = 15o c t = 25c j j per juncti on 0 25 50 75 100 125 150 maximum allowable ambi ent temperature ( c) r = 0 .7 k /w - d e l t a r t h s a 1 0 k / w 7 k / w 5 k / w 4 k / w 3 k / w 2 k / w 1 k / w 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 120 (rect) total output current (a) ma x i mu m t o t a l p o w e r l o s s ( w ) m t 35 s e r i es t = 150c j 100 150 200 250 300 350 400 450 1 1 0 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) m t 35 s e r i e s initial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied following surge. rrm j 100 150 200 250 300 350 400 450 500 0.01 0.1 1 peak half sin e wave for ward curr ent ( a) pulse train duration (s) maximum non repetitive surge current initial t = 150 c no voltage reapplied rated v reapplied rrm versus pulse train duration. j m t 35 s e r i e s               5 -g 
    

  
 
 


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fig. 11 - thermal impedance z thjc characteristics fig. 12 - thermal impedance z thjc characteristics 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 1 00 square wave pulse duration (s) m t 35 s e r i es pe r bridge trans i ent thermal impedanc e z (k/w) thjc steady state value: r = 1.16 k/w (dc operation) thjc 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 1 0 100 square wave pulse duration (s) m t 25 s e r i es per bridge trans i ent thermal impedan ce z (k/w) thjc steady state value: r = 1.42 k/w (dc operation) thjc               5 -g 
    

  
 
 


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discl a imer : 1- the information given herein, including the specifications and dimens ions, is subject to change wi thout prior not ice to imp rove product characteristics. before ordering, purchasers are advised to contact the s ensitron semiconductor sales department for th e latest version of the datasheet(s). 2- in cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users? fail-safe prec autions or other arrangement . 3- in no event shall sensitron semiconducto r be liable for any damages that may result from an accident or any other cause duri ng operation of the user?s units according to the datasheet(s). sensitron semiconducto r assumes no responsibility for any intellec tual property claims or any other problems that may result from applications of information, products or circuits described in the d atasheets. 4- in no event shall sensitron semiconduc tor be liable for any failure in a semiconductor device or any secondary damage result ing from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or ot her rights of any third party or sensitron semiconductor. 6- the datasheet(s) may not be reproduced or duplicated, in any f o rm, in w hole or part, w i thout the expressed w r it ten permiss i on of sensitron semiconductor. 7- the products (technologies) de scribed in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary pr ocedures are to be taken in accordance with related laws a nd regulations. green products   sensitron semiconductor  ? 
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