solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet features: ? rugged construction ? low rds(on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capab ility ? low input and transfer capacitance for easy paralleling ? hermetically sealed package ? tx, txv and space level screening available sfl3200/39 logic level 12a 150v .17 ? n-channel power mosfet to-39 maximum ratings symbol value unit drain to source voltage v ds 150 volts gate to source voltage v gs + 16 volts continuous drain current i d 9.3 amps peak drain current tc = 25 c 1/ i p 35 amps operating and storage temperature top & tstg -55 to 175 oc thermal resistance junction to case r jc 11.5 oc/w total device dissipation @ tc = 25 c total device dissipation @ ta = 25 c p d 13 1.2 watts package outline: to-39 (jedec) pin out: pin 1: source pin 2: gate pin 3: drain note: 1 / peak drain current limited by package lead wire note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: FT0007a
solid state devices, inc. 14830 valley view blvd * la mirada, ca 90638 phone: (562) 404-7855 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sfl3200/39 electrical characteristics @ tj = 25 o c (unless otherwise specified) symbol min typ max units drain to source breakdown voltage (vgs=0 v, id=250 ?) bv dss 150 ?? ?? volts drain to source on state resistance (vgs=10 v, id=5 a ) r ds(on) ?? .16 .17 ? on state drain current (vds>id(on) x rds(on) max, vgs=5v) i d(on) 12 ?? ?? a gate threshold voltage (vds=vgs, id=250 ?) v gs(th) 1 ?? 2 v forward transconductance (vds>id(on) x max, ids=5a) g fs 8.35 6 ?? mho zero gate voltage drain current (vds=max rated voltage, vgs=0 v) (vds=80% rated vds, vgs=0 v, ta=125oc) i dss ?? ?? ?? ?? 25 250 a gate to source leakage forward gate to source leakage reverse at rated vgs i gss ?? ?? ?? ?? 100 -100 na total gate charge gate to source charge gate to drain charge vgs=10 volts 80% rated vds id=9a q g q gs q gd ?? ?? ?? ?? ?? ?? 35 4.1 21 nc turn on delay time rise time turn on delay time fall time vdd=50% rated vds rg=15 ? id=7.2a td(on) tr td(off) tf ?? ?? ?? ?? 2.4 45 38 36 ?? ?? ?? ?? nsec diode forward voltage (vgs=0 v, tj=25oc) is=7.2a v sd ?? ?? 1.33 v diode reverse recovery time reverse recovery charge tj=150oc if=7.2a di/dt=100a/ sec t rr q rr ?? ?? 160 8.1 240 ?? nsec nc input capacitance input capacitance reverse transfer capacitance vgs=0 volts vds=25 volts f=1 mhz c iss c oss c rss ?? ?? ?? 775 140 70 ?? ?? ?? pf
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