<^e.mi-(-on.au<2toi lp , one. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 irf610-613 mtp2n18/2n20 n-channel power mosfets, 3.5 a, 150-200 v power and discrete division description these devices are n-channel, enhancement mode, power mosfets designed especially for high speed applications, such as switching power supplies, converters, ac and dc motor controls, relay and solenoid drivers and other pulse circuits. low rds(on) vqs rated at 20 v silicon gate lor fast switching speeds loss. vds(0n), specified at elevated temperature rugged low drive requirements ease of paralleling maximum ratings to-220ab irf610 irf611 irf612 irf613 mtp2n18 MTP2N20 symbol vdss vdgr vgs tj, ts|s tl characteristic drain to source voltage1 drain to gate voltage1 rgs ?= 20 kfi gate to source voltage operating junction and storage temperatures maximum lead temperature for soldering purposes, 1/8" from case for 5 s rating irf610/612 MTP2N20 200 200 20 -55 to +150 275 rating mtp2n18 180 180 20 -55 to +150 275 rating irf611/813 150 150 20 -55 to +150 275 unit v v v c c maximum on-state characteristics rds(on) b static drain-to-source on resistance drain current continuous at tc = 25c continuous at to - 100c pulsed irf610/611 1.5 2,5 1.5 10 mtp2n18/20 1.8 3.25 2.25 9.0 irf612/613 2.4 2.0 1.25 8.0 n a maximum thermal characteristics rjjc rflja pd thermal resistance, junction to case thermal resistance, junction to ambient total power dissipation at tc - 25c 6.4 80 20 2.5 80 50 6.4 80 20 c/w c/w w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
irf610-613 mtp2n18/2n20 electrical characteristics (tc - 25c unless otherwise noted) symbol characteristic mln max unit test conditions off characteristics v(br)dss idss igss drain source breakdown voltage1 irf610/612/MTP2N20 mtp2n18 irf611/613 zero gate voltage drain current gate-body leakage current 200 180 150 250 1000 500 v ma ma na vgs = 0 v, id - 250 pa vds - rated vdss. vqs = 0 v vds = 0.8 x rated vdss. vgs = 0 v, tc = 125c vqs = 20 v, vds = 0 v on characteristics vqs(th) rdsioh) vds(on) grs gate threshold voltage irf610-613 mtp2n18/20 static drain-source on-resistance2 irf61 0/611 irf612/613 mtp2n18/20 drain-source on-voltage2 mtp2n18/2n20 forward transconductance 2.0 2.0 0.8 4.0 4.5 1.5 2.4 1.8 4.4 3.6 v n v v s (u) id - 250 ma. vds ? vgs id = 1 ma, vds - vgs vqs =10 v, id =1.25 a id -1.0 a vgs =10 v; i0 = 2.0 a vqs -10 v; id -1.0 a; tc-100c vds = 10 v. id =1.25 a dynamic characteristics qss coas crss input capacitance output capacitance reverse transfer capacitance 200 80 25 pf pf pf vds = 25 v, vgs - 0 v f-1.0 mhz switching characteristics 25''c, figures 11, 12}3 td(on) t, tdfoh) t| q9 turn-on delay time rise time turn-off delay time fall time total gate charge 15 25 15 15 7.5 ns ns ns ns nc vdd = 50 v, id = 1.25 a vgs = 10 v, rgen = 50 ft rqs = 50 n vgs= 10 v, id = 3.0 a vdd = 45 v
irf610-613 mtp2n18/2n20 electrical characteristics (cont.) (tc - 25c unless otherwise noted) symbol characteristic typ max unit test conditions source-drain diode characteristics vsd tir diode forward voltage irf610/611 irf612/613 reverse recovery time 290 2.0 1.8 v v ns is = 2.5 a; vgs = 0 v ls - 2.0 a: vgs - 0 v ls = 2.5 a; dls/dt = 25 a//js holes 1. tj-+25'c to +150'c 2. pulse test pulse width < so its, only cycle <1% 3. switching time measurements performed en lem tr-5b tast equipmgnl typical performance curves figure 1 output characteristics 5 0 1 4 6 i 10 vj,?drain to source voltaqe-v pcll44flf figure 3 transfer characteristics 7 s i 4 s < 7 a ? vm-oate to source voltaob-v figure 2 static drain to source resistance vs drain current 1234 id?drain current?a figure 4 temperature variation of gate to source threshold voltage i" c'fl 1 0.7 z 0 i0-1.0ma tj-junction temperature?*c
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