s m d ty p e m o s f e t 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. dra i n FDN5630 features v ds (v) = 60v r ds(on) 100 m (v gs = 10v) r ds(on) 120 m (v gs = 6v) optim ized for use in high frequency dc /dc conver ters low gate c harg e very fast s w itc hing absolute maxim um ratings t a = 25 paramet er sym bol rating unit dra in-source voltage v ds 60 v gate-to-sour ce voltage v gs 20 v dra in curent -continuou s 1.7 -pulsed 10 pow er dissi pation p d 0.5 w ma x im um j unction-to-am bient r ja 250 / w junct ion and storage tem pera ture rang e t j ,t stg -55 to +150 i d a product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
s m d ty p e m o s f e t ele ctrical characteris tics t a = 25 parameter sym bol testc onditons min typ ma x unit drain -source breakdow n voltage v (br)dss i d = 250 a, v gs = 0v 60 v breakdow n voltage tem pera ture coefficient v (br)dss / t j i d = 250 a, refere nced to 25 63 m v/ i d = 1.7a, v gs = 10v 73 100 i d = 1.7a, v gs = 10v ta = 125 127 180 i d = 1.6a, v gs = 6v 83 120 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 2.4 3 v forw ard tran sc ondu ctance g fs v ds = 10 v, i d = 1.7 a 6 s gate-source leakage curre nt i dss v ds = 48 v, v gs = 0v 1 a gate-source forw ard lead age v gs =-20v -100 gate-source rev erse leadag e v gs =20v 100 total gate charge q g 7 10 gate-sour ce charge q gs 1.6 gate-dr ain char ge q gd 1.2 turn- on delay tim e t d(on ) 10 20 rise tim e t r v dd = 30 v, i d = 1 a 6 15 turn- off delay tim e t d(off ) v gs =10 v, r gen = 6 15 28 fall ti m e t r 5 15 input capacit ance c iss v ds = 15 v, 400 output capacit ance c oss v gs = 0 v , 102 rev erse transfer capacit ance c rss f= 1mhz 21 ma x im um continuou s drain-sour ce diode forw ard cu rren t i s 0.42 a diode forw ard vo ltage v sd v gs = 0 v , i s = 0.42 a 0.72 1.2 v ns pf v ds =20v ,v gs = 10 v , i d =1.7 a nc m r ds(on) stati c drain-source on- re sis tance i gss na s m d ty p e m o s f e t FDN5630 product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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