wnm2023 single n-channel, 20v, 3.2a, power mosfet descriptions the wnm2023 is n-channel enhancement mos field effect transistor. uses advanced trench technology and design to provide excellent r ds (on) with low gate charge. this device is suitable for use in dc-dc conversion, power sw itch and charging circuit. standard product wnm2023 is pb-free. features z trench technology z supper high density cell design z excellent on resistance for higher dc current z extremely low threshold voltage z small package sot-23-3l applications z driver for relay, solenoid, motor, led etc. z dc-dc converter circuit z power switch z load switch z charging sot-23-3l pin configuration (top view) w04* w04 = device code * = month (a~z) marking order information device package shipping wnm2023-3/tr sot-23-3l 3000/reel&tape v ds (v) rds(on) ( ? ) 0.038@ v gs =4.5v 0.044@ v gs =2.5v 20 0.052@ v gs =1.8v 3 d g s 1 2 3 2 1 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
absolute maximum ratings parameter symbol 10 s steady state unit drain-source voltage v ds 20 gate-source voltage v gs 8 v t a =25c 3.2 2.9 continuous drain current a t a =70c i d 2.5 2.3 a t a =25c 0.8 0.7 maximum power dissipation a t a =70c p d 0.5 0.4 w t a =25c 2.9 2.7 continuous drain current b t a =70c i d 2.3 2.1 a t a =25c 0.6 0.5 maximum power dissipation b t a =70c p d 0.4 0.3 w pulsed drain current c i dm 10 a operating junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55 to 150 c thermal resistance ratings parameter symbol typical maximum unit t 10 s 125 150 junction-to-ambient thermal resistance a steady state r ja 140 175 t 10 s 150 180 junction-to-ambient thermal resistance b steady state r ja 165 210 junction-to-case thermal resistance steady state r jc 60 75 c/w a surface mounted on fr4 board using 1 square inch pad size, 1oz copper b surface mounted on fr4 board using minimum pad size, 1oz copper c repetitive rating, pulse width limited by junction temperature, t p =10s, duty cycle=1% d repetitive rating, pulse width limited by junction temperature t j =150c. wnm2023 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics drain-to-source breakdown voltage bv dss v gs = 0 v, i d = 250ua 20 v zero gate voltage drain current i dss v ds =16 v, v gs = 0v 1 ua gate-to-source leakage current i gss v ds = 0 v, v gs = 8 v 100 na on characteristics gate threshold voltage v gs(th) v gs = v ds , i d = 250ua 0.4 5 0.6 1 v v gs = 4.5v, i d = 3.2a 38 47 v gs =-2.5v, i d =3.1a 44 55 drain-to-source on-resistance r ds(on) v gs = 1.8v, i d = 1.5a 52 66 m ? forward transconductance g fs v ds = 5 v, i d =3.1a 11 s charges, capacitances and gate resistance input capacitance c iss output capacitance c oss reverse transfer capacitance c rss v gs = 0 v, f = 1.0 mhz, v ds = 10 v pf total gate charge q g(tot) threshold gate charge q g(th) gate-to-source charge q gs gate-to-drain charge q gd v gs =4.5 v, v ds =10 v, i d = 3.1a nc switching characteristics turn-on delay time td(on) 5 8 rise time tr 6 9 turn-off delay time td(off) 30 45 fall time tf v gs = 4.5 v, v ds = 10 v, r l =3.5 ? , r g =6 ? 8 12 ns body diode characteristics forward voltage v sd v gs = 0 v, i s = 1.0a 0.5 0.62 1.5 v 58 8.05 0.45 0.6 2.65 62 500 wnm2023 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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