?2001 fairchild semiconductor corporation 1 www.fairchildsemi.com hgtG30N60B3 rev. c1 hgtG30N60B3 600 v , npt igbt th e hgt g 3 0 n60 b 3 co mb ine s the best fe atures of hi gh inp u t imp edan ce o f a mosf et and the lo w on-st a t e cond ucti on loss of a b i pol ar tran sisto r . the igbt is i deal for many hig h vo lt a ge switchin g appl ication s op erating a t modera t e frequ encie s wh ere lo w cond uction lo sse s are essentia l, such as: ups, sola r in verte r a nd powe r sup p li es. fo rme r l y de velop m e nt al t y pe t a 4917 0. symbol features ? 3 0 a, 60 0 v , t c = 1 1 0 c ? l o w sa tura ti on v o lt age: v ce (sat) = 1.45 v @ i c = 30 a ? t ypical f a ll t i me. . . . . . . . 90ns at t j = 15 0c ? s hort circuit rating ? l o w co ndu ctio n loss packaging jedec s t yle t o - 247 ordering information pa rt n u mber package b rand hgtg30n 60b3 t o-247 g30n60 b 3 note: w h en order in g, use the entire p a rt number . c e g t o -247 g c e dat a sheet november 2013 http://
?2001 fairchild semiconductor corporation 2 www.fairchildsemi.com hgtG30N60B3 rev. c1 abs o lu te m aximum ratings t c = 25 o c, u n less oth e rwise s pecif ied rat i ng s u n i t collector to emitter v o lt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . b v ce s 60 0 v collector curr ent continuous at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c2 5 60 a at t c = 1 1 0 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i c1 10 30 a collector current pulsed (note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i cm 22 0 a ga te to emitt er v olt a ge continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v ges ? 20 v ga te to emitt er v olt a ge pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v gem ? 30 v swit ching safe opera t ing ar ea at t j = 1 5 0 o c (figur e 2) . . . . . . . . . . . . . . . . . . . . . . . ss oa 60 a at 600 v power dissip at i on t ot al at t c = 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 20 8 w power dissip a t i on d e rating t c > 25 o c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 w/ o c reverse v olt ag e a v alanche e n ergy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e ar v 10 0 m j op erating and s t orag e jun c tion t emperatu r e rang e . . . . . . . . . . . . . . . . . . . . . . . . t j , t stg - 55 to 150 o c maximum lea d t e mp erature for soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t l 26 0 o c short c i r c uit withst and t i me (no te 2) at v ge = 12 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 4 ? s short c i r c uit withst and t i me (no te 2) at v ge = 10 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t sc 10 ? s cauti o n: s t resses ab ove t hose liste d in ?a bsolut e maximum rat i ng s? may cau s e pe rmanen t damag e t o the de vice. t h is is a stre ss o nly r at i ng and oper ati on of th e de vi ce at th ese o r a n y o t he r con d it ions above t hose indicat e d in t he ope rat i ona l sect ions of t h is sp ecificat ion is not i m plied . notes: 1. pulse wid t h limited by maximum junction temperatu r e. 2. v ce(pk ) = 360 v , t j = 125 o c, r g = 3 ?? elec trica l s p ec ificat ions t c = 25 o c, unles s other wi se s p ec ified para met e r symbol t est condit ions m in typ m ax u n i t collector to emitter breakdown voltage bv ce s i c = 250 ? a, v ge = 0 v 600 - - v emitter to collector breakdown voltage bv ec s i c = -10 ma, v ge = 0 v 2 0 - - v collector to emitter leakage cur r ent i ces v ce = bv ce s t c = 25 o c - - 250 ? a t c = 150 o c- - 3 . 0 m a collector to emitter saturat i on voltage v ce( s a t ) i c = i c1 10 , v ge = 1 5 v t c = 25 o c - 1 .45 1.9 v t c = 150 o c- 1 . 7 2 . 1 v ga te to emitt e r th reshold v o ltage v ge(th ) i c = 250 ? a, v ce = v ge 4.2 5.0 6.0 v ga te to emitt e r leakage c u rren t i ges v ge = ? 20 v - - ? 250 na swi t c h ing soa s s o a t j = 150 o c, r g = 3 ?? v ge = 1 5 v , l = 100 ? h v ce (pk) = 4 80 v 2 0 0 - - a v ce (pk) = 6 00 v 6 0 - - a ga te to emitt er plateau voltage v gep i c = i c1 10 , v ce = 0.5 bv ce s -7 . 2 - v on -state gate cha r ge q g( on) i c = i c1 10 , v ce = 0.5 bv ce s v ge = 15 v - 170 190 nc v ge = 20 v - 230 250 nc curr ent t urn- o n d elay time t d( o n ) i igbt and diode at t j = 2 5 o c i ce = i c1 1 0 v ce = 0.8 bv ce s v ge = 1 5 v r g = 3 ? l = 1 mh test circuit ( f igure 1 7) -3 6 - n s curr ent rise time t ri -2 5 - n s curr ent t u rn- o ff d e lay ti me t d(o ff)i - 137 - ns curr ent f all time t fi -5 8 - n s tur n-on energ y ( n ote 4) e on1 - 500 - ? j tur n-on energ y ( n ote 4) e on2 - 550 800 ? j tur n-off energ y ( n ote 3) e of f - 680 900 ? j hgtG30N60B3
?2001 fairchild semiconductor corporation 3 www.fairchildsemi.com hgtG30N60B3 rev. c1 curr ent t urn- o n d elay time t d( o n ) i igbt and diode at t j = 150 o c i ce = i c1 1 0 v ce = 0.8 bv ce s v ge = 1 5 v r g = 3 ? l = 1 mh test circuit ( f igure 1 7) -3 2 - n s curr ent rise time t ri -2 4 - n s curr ent t u rn- o ff d e lay ti me t d(o ff)i - 275 320 ns curr ent f all time t fi - 90 150 ns tur n-on energ y ( n ote 4) e on1 - 500 - ? j tur n-on energ y ( n ote 4) e on2 - 1300 1550 ? j tur n-off energ y ( n ote 3) e of f - 1600 1900 ? j ther mal resistance jun c tion to case r ? jc -- 0 . 6 o c/ w notes: 3. t urn- o ff energ y loss ( e off ) is define d as the inte gral of the insta ntaneous pow er lo ss sta r ting at the tr ailin g edge of the in put pulse and ending at the point where the collector curr ent equals zero ( i ce = 0a). all devices we re tested per je dec standard n o. 24-1 method for measu r ement of power device tu rn-off switching l oss. th is test method pr oduces th e true tot al t urn- o ff ene r gy loss. 4. values for two tur n -on loss con d itions ar e s hown for th e conve n ience of the circuit desig ner. e on1 is the tur n -on lo ss of the igbt only. e on2 is the tur n -on loss when a typical diode is used in the test cir c uit and t he dio de is at the same t j as the igb t . the diode type is sp ecifie d in figure 17. t y pical performan ce curves unless other wise s pecified f i gu re 1. d c collect or c urrent vs case tempera t ure fi gur e 2. min imum switch ing s a fe ope r a t i n g a r ea f i gu re 3. opera t ing frequency vs col l ect o r t o emitt e r curr ent figur e 4 . short circu it with st an d time elec trica l s p ec ificat ions t c = 25 o c, unles s other wi se s p ec ified (c o n t i nu e d ) para met e r symbol t est condit ions m in typ m ax u n i t t c , case temperature ( o c) i ce , dc col l e c t o r current (a) 50 10 0 40 20 30 50 60 v ge = 15v 2 5 75 1 00 125 15 0 v ce , col l e c t o r t o e m itter vol t age ( v ) 125 70 0 75 0 i ce , collect or t o emit te r current ( a ) 25 50 300 400 20 0 100 5 00 600 100 0 150 175 200 225 t j = 150 o c, r g = 3 ? , v ge = 15 v , l =1 00 ? h f ma x , ope r a t ing frequency (khz) 5 i ce , collect or t o emitter current (a) 1 0. 1 10 60 20 40 10 0 f max1 = 0.05 / (t d(o ff)i + t d(o n )i ) r ?j c = 0.6 o c/w , se e notes p c = condu ction dis s ip a t ion ( d u ty f act or = 50%) f ma x 2 = (p d - p c ) / (e on2 + e off ) t c v ge 110 o c 10v 15v 15v 75 o c 11 0 o c 75 o c 10v 10 v ce = 480 v t j = 1 5 0 o c, r g = 3 ? , l = 1 m h, v ge , ga te t o emi t te r vo l t age (v) i sc , p e ak short circuit cur re nt (a) t sc , short circuit with s t and t i me ( ? s) 10 1 1 12 13 1 4 15 6 8 10 12 16 20 14 150 200 250 300 350 400 500 t sc i sc 18 450 v ce = 360v, r g = 3 ? , t j = 12 5 o c hgtG30N60B3
?2001 fairchild semiconductor corporation 4 www.fairchildsemi.com hgtG30N60B3 rev. c1 f i gure 5. coll ec t o r t o emit ter on- s t a t e vol t a g e f igure 6. coll ect o r t o em it ter on- s t a te vo l t ag e f i gu re 7 . t urn- on ener gy loss v s c o l l ect o r t o emitt e r curr ent f i gure 8. t urn- off energy loss vs col l ect o r t o emitt e r cur rent f i gu re 9 . t urn- on d e l a y t i me vs col l ect o r t o emitt e r curr ent f igu re 10. t urn- on r ise t ime v s c o l l ect o r t o emitt e r cur rent t y pical performan ce curves unless other wise s pecified (co n tin u ed ) 024 v ce , collect or t o emitter v o l t age (v ) i ce , collector to emitter current (a) 0 25 50 75 68 1 0 150 125 100 t c = 25 o c 175 t c = -55 o c pul s e dur a t ion = 25 0 ? s duty cycle <0.5%, v ge = 10v 225 200 t c = 150 o c i ce , collector to emitter current (a) v ce , collect or t o emit te r vol t age (v) 20 0 25 0 30 0 35 0 01 2 0 15 0 34 5 10 0 50 duty cycle <0.5%, v ge = 15v pulse duration = 250 ? s t c = -55 o c t c = 150 o c t c = 25 o c 67 e on2 , turn-on energy loss (mj) 5 3 i ce , collect or t o emitter current (a) 4 2 1 40 20 60 50 30 10 6 0 t j = 25 o c, t j = 15 0 o c, v ge = 10v r g = 3 ? , l = 1m h, v ce = 480 v t j = 25 o c, t j = 150 o c, v ge = 15v i ce , collect or t o emitter c urrent (a) e of f , turn-off energy loss (mj) 0 0.5 50 30 20 40 6 0 10 1. 0 2. 5 r g = 3 ? , l = 1m h, v ce = 48 0v t j = 150 o c, v ge = 10v or 15v t j = 2 5 o c, v ge = 10v or 15v 2.0 1.5 3. 0 3. 5 4. 0 4. 5 i ce , c o ll e ct o r t o e m itter curr e nt (a) t di , t urn-on dela y time (ns) 20 10 3 0 50 25 30 35 40 45 50 40 55 60 t j = 25 o c, t j = 15 0 o c, v ge = 1 0 v t j = 25 o c, t j = 150 o c, v ge = 15v r g = 3 ? , l = 1m h, v ce = 4 80v i ce , c o llect or t o e m itter curr e n t (a) t ri , r is e t i me (ns) 20 0 50 250 200 100 60 10 150 50 40 30 r g = 3 ? , l = 1 m h, v ce = 4 80v t j = 2 5 o c, t j = 150 o c, v ge = 10v t j = 25 o c, t j = 150 o c, v ge = 15v hgtG30N60B3
?2001 fairchild semiconductor corporation 5 www.fairchildsemi.com hgtG30N60B3 rev. c1 f i gure 1 1 . t urn- of f dela y t i me vs coll ect o r t o emitt e r curr ent fi g u r e 1 2 . f a l l ti me vs co ll ec t o r t o emi t t e r cur rent f i gu re 13. tran sfer ch aract eristic f igur e 14. ga t e char ge w a veforms figure 15. cap a c it a nce vs c o l l ect o r t o emitt e r vol t a ge t y pical performan ce curves unless other wise s pecified (co n tin u ed ) 20 30 60 10 250 300 50 40 100 200 150 i ce , collect or t o emitter current (a) t d(o ff)i , turn-off dela y time (ns) t j = 25 o c, v ge = 1 0 v , v ge = 15 v t j = 1 5 0 o c, v ge = 1 0 v , v ge = 15 v r g = 3 ? , l = 1 m h, v ce = 480v i ce , collect or t o emitt e r current (a) t fi , f all time (ns) 20 3 0 60 10 40 10 0 12 0 50 40 60 80 t j = 150 o c, v ge = 10v and 15v t j = 25 o c, v ge = 10v and 15v r g = 3 ? , l = 1m h, v ce = 48 0v i ce , collector to emitter current (a) 0 50 100 15 0 57 8 9 1 0 6 v ge , ga te t o emitter vo l t a g e (v) 11 20 0 25 0 30 0 4 t c = 150 o c t c = 25 o c t c = -5 5 o c duty cycle <0.5%, v ce = 10v pulse dura tion = 25 0 ? s q g , ga te charge (nc) 0 8 10 6 4 2 05 0 v ge , g a te t o emi tter vo l t age (v) v ce = 400v v ce = 600 v 15 0 2 00 100 12 14 16 v ce = 200v i g (ref) = 1 m a, r l = 1 0 ? , t c = 25 o c v ce , collect or t o emitter v o l t age (v ) 0 5 10 1 5 20 25 0 c, cap acit a n c e (nf) 2 4 6 8 10 c ies c oes c res f r equency = 1mhz hgtG30N60B3
?2001 fairchild semiconductor corporation 6 www.fairchildsemi.com hgtG30N60B3 rev. c1 figure 16. normal ized t ran sien t th ermal r e sponse, jun c tion t o case t est circuit and w aveforms f igu re 17. induc tive switchin g t est cir cuit f igure 18. switch ing test wavef orm s t y pical performan ce curves unless other wise s pecified (co n tin u ed ) z ? jc , normalized thermal response t 1 , rectangular pulse duration (s) 10 -5 10 -3 10 0 10 1 10 -4 t 1 t 2 p d duty f act or, d = t 1 / t 2 peak t j = (p d x z ? jc x r ? jc ) + t c 10 -1 10 -2 single pulse 10 0 10 -1 10 -2 0.50 0.20 0.05 0.01 0.10 0.02 r g = 3 ? l = 1mh v dd = 4 80v + - hg t g 30n60 b 3 d t fi t d(off)i t ri t d(on)i 10% 90 % 10% 90% v ce i ce v ge e off e on 2 hgtG30N60B3
?2001 fairchild semiconductor corporation 7 www.fairchildsemi.com hgtG30N60B3 rev. c1 hand ling precaution s for igbt s i n sulated gate bipolar t r ansist ors a r e su sce p tible to ga te- insu lation da mage by th e ele c trost a tic d i scharg e o f en ergy th rough the d e vices. w hen h andl ing these de vices, care shou ld be exercise d to assu re tha t th e st atic charg e b u il t in th e han dler ? s bod y cap a cit ance is not discha r g ed throug h th e device . wi th pro per hand lin g and ap plica t io n proced ures, h o weve r , igbt s are curren t l y be ing exten s i vely used in p r oduction b y n u merous equ ipmen t manu facturers in milit ary , ind u stri al and cons u m e r ap plica t i ons, with virtuall y no da ma ge prob lems d ue to electrost a ti c d i scharge . igbt s can be ha ndl ed safely if the follo wing b a sic precau tio n s are t a ken: 1. prio r to asse mb ly into a circui t, all l ead s sho u ld b e kept shorted toge the r e i th er by the u s e o f met a l shorting spring s o r by the insertio n i n to co ndu ctive materia l su ch as ?ec c osorbd? l d 26? or equ ivale n t. 2. w hen device s a r e removed by han d from th eir carriers, th e h and bei ng u sed sh oul d be gro unde d b y any su it able means - for exampl e, wi th a met a ll ic w r i stb and. 3. t i p s o f sold ering iro n s sh oul d b e groun ded . 4. de vices shou ld n e ver be inserted i n to or remove d fro m circuit s with p o wer on. 5. gate v o lt ag e ratin g - never exceed the gate-vol t ag e rating of v ge m . exceedi ng the rated v ge can result in perman ent d a mage to the oxide l a yer in th e gate regi on. 6. g ate t erm in atio n - t h e gates of these d e vices are essentially cap a citors. circ u i t s th at l e ave th e ga te open-circuited or floatin g sh oul d be avoid ed. the se cond iti ons can resul t in turn-on o f th e device du e to volt age b u ildup on the inp u t ca p a citor due to lea k a ge current s or pickup. 7. gate protectio n - the se device s d o not have a n intern al monol ithic zen e r diod e from gate to emitter . if g a te protection is re qui re d a n e xte rn al zen e r i s recommend ed. operating frequency information o perating frequ ency information for a typ i cal devi c e (fi gure 3 ) is presen ted a s a gu ide for estimati ng de vi ce pe rforman c e for a specific app licatio n. oth e r typi ca l fr equency vs collector current (i ce ) p l ot s are p o ssible u sing the information shown for a typ i cal uni t in fig u res 5 , 6, 7, 8, 9 an d 1 1 . t he op erating frequ ency plot (fig ure 3) of a typical dev i ce s h ows f max 1 or f max2 ; which e ver is smal ler at e a ch po int. t he information i s ba sed on measu r e m e n t s of a typical d e vice and is bo unde d by the maxi mu m rated ju ncti on te mperature. f max1 i s de fi ned by f max1 = 0. 05 / ( t d(off) i + t d(o n )i ). dea d time (the deno minator) has be en arb i tra r ily hel d to 10% of the o n -st a te time fo r a 50 % duty factor . othe r d e fi nition s are po ssi ble . t d( off)i an d t d(on)i a r e d e fined in fig u re 18. devi ce turn-o f f del ay can est a blish a n addi ti onal frequ ency limi t in g condi ti on fo r a n a ppl ication othe r than t jm . t d( of f) i is import ant when co ntro llin g output rippl e unde r a li ghtly lo aded con d itio n. f max 2 i s de fi n e d by f ma x2 = (p d - p c )/(e off + e on 2 ). the al lowa ble di ssi p ation (p d ) is de fin ed by p d =( t jm -t c )/r ? jc . the sum of device sw itchi ng and cond ucti on losses must not exce ed p d . a 50% d u ty factor wa s used (figure 3) a nd the condu ctio n losse s (p c ) are app roximated by p c =( v ce xi ce )/2. e on2 and e off ar e de fi n e d in t h e sw it chi n g w a vef o r m s show n in fig u re 18. e on2 is the in te gral of the in st an t a n eou s power loss (i ce x v ce ) during turn-on and e off is the integ r a l of the in st an t a n eous po wer loss (i ce xv ce ) durin g turn -o f f . all t a il losses are in cl uded i n th e calcu l ation for e of f ; i . e . , th e co llector current equa ls ze ro (i ce = 0). hgtG30N60B3
?2001 fairchild semiconductor corporation 8 www.fairchildsemi.com hgtG30N60B3 rev. c1 hgtG30N60B3 mechanical dimensions f ig u r e 19 . t o -2 47 3 l - t o - 2 4 7 , m o l ded ,3 l e ad, jed e c v a r ia t ion ab package draw ings a r e p r ovided as a se rvice to custome r s consider ing fairchil d co mponent s. d r awings may change in any man ner without n o tice. please no te the revision an d/or date on the draw ing and cont a c t a f air child semicond uctor r epresent ative to ve r ify or obt ain the most r ecen t r evision. packa ge specifications do not exp and the ter m s of fairchild? s wor l dwide terms and conditions, specif- ically the wa rran t y ther ein, wh ich covers fairchild p r oduct s . alwa ys visit f airchild semicondu ctor ? s o nline p ack agin g area fo r the most re cent p a ckage d r awings: http://ww w .fairchildsemi.com/p acka ge/p a ckag edet ails.html?id= p n _ t o 24 7-003
?2001 fairchild semiconductor corporation 9 www.fairchildsemi.com hgtG30N60B3 rev. c1 tr ade ma rks the f o llo w i ng in clu des re giste r ed a nd un regist ere d t r adema r ks a nd ser v ice marks, own ed by fai r ch ild s e micond uct o r and/ or its gl obal su bsidiar i es, a nd is n o t int ende d to be an exha ustive list o f all such tra demar ks. * t rad e marks o f syste m g enera l co rpora t io n, used u nder licen se by fairchild s e micondu ct or . dis c laimer fairchild semi c on ducto r r eserves the r i g h t to make chan g es withou t fur t h e r no ti c e to any pro d u c ts herein to impro v e reliabi li ty, fun c t i on, or d esi gn. f a irc h ild does not assu me an y liabi li ty arising out of th e applicati o n or use of an y produ c t or circ uit described herein; neither does it c o n vey an y license under it s pat ent r i ghts, nor the righ t s of ot h e rs. these specif icati o ns do not expand the t erms of f airch i l d? s worldwide t e r m s and cond i t io ns, specif ically the war r anty therein, which c o ver s these pro ducts. life suppo rt po licy fair child?s products a r e not a u thor ized fo r u s e a s critical c o mpone n t s in life supp ort devices or sy stems without the exp ress writt e n ap prov al of fa irchild semiconduct or corporation. as u s e d here in: 1. l i fe sup port devices o r syst ems a r e devices or syst ems whi c h , (a) a r e i nte nded f or surgi c al imp l ant i nto t he bo dy or (b ) sup port or su st ain li fe, a nd (c) wh ose f a il ure to p e rf orm w hen prop erly used in acco rdan ce wit h i n stru ct ion s f o r use p r ovide d i n t he lab e ling , can be reason ably e x p e cte d t o result in a sig n if icant in jury of t he user. 2. a crit ical compo nent in any compon ent of a li fe su pport , device, or syst em wh ose f a il ure t o p e rf orm can be reason ably expect ed to cause th e f a ilu re of t he life supp ort de vi ce or syst e m, o r t o aff e ct it s saf e t y or ef fect iveness. product stat us definitions defini tion of term s a ccup o wer? ax- c a p ? * bitsic? buil d i t now? corep l us? corep o wer? cross volt ? ct l ? curre nt tran sf er log ic? deuxpe ed ? dual cool? ec osp a rk ? ef fic e n t ma x? esb c? fairchild ? fairchild s e micondu ct or ? fact quiet s e rie s ? fact ? fast ? fast vcore? fetben c h ? fps? f- pf s? frfet ? g l obal po wer resource sm g r eenb ridg e? g r een fps ? g r een fps ? e-se ries? g max ? gt o? intellima x ? is o p l a nar ? mar k i ng small s peaker s s ound l ouder an d bet t e r ? megab u ck? microcoupl e r? microf et ? microp ak? micro p ak2? mill erdrive? mot i on max? mwsaver ? opto hit? op to l o g i c ? o p topl anar ? p o w e rt re n ch ? power xs? prog rammab l e active droo p? qf et ? qs? quie t ser i es ? rapidco n fi gure? saving ou r wo rld, 1 m w/w/ kw a t a ti me? sign alwise? smart m ax? smart start? s o lut i ons for y o ur s u ccess ? spm ? steal th? supe rfet ? supe rso t ?-3 supe rso t ?-6 supe rso t ?-8 supr emos ? syncfet? sync-l ock? ?* tinybo ost ? tinybu c k ? tinycalc? tinylog ic ? ti nyo p to? tinypo w e r? tinypwm? tinywire ? tran sic? trifaul t detect? truecurrent ? * ? ser d es ? uhc ? ultra fr fet ? unifet? vcx ? v i sualmax? vo lta geplu s ? xs ? ? ? dat asheet identifi c a tion pr oduct s t atus definiti on a d va nc e in fo r m a tio n fo r m a t i ve / in de sig n dat a she e t cont ains the d e sign specif ica t io ns f o r pro duct de ve lopmen t. s p ecifi c a t io ns may cha nge in any manne r w i tho u t no tice. pre limina r y f ir s t prod uctio n dat a she e t cont ains preli minary dat a ; suppl ement a ry d a t a will be pub lished at a la te r dat e. fai r child semi co nduct o r reserves th e r i ght to make chang es at any t i me wit hout not ice to impr ove design. no i den tif i cat i on need ed full pr oduct i on dat a she e t cont ains fin a l specificat ion s . fair child s e micondu ct or re se rves t he righ t to make ch ange s at a ny t i me wit hout n ot i ce t o impro v e t he desig n. obs o l e te not i n p r odu ct ion dat a she e t cont ains sp ecifi c at ion s on a product t hat is discont inu ed by fai r child semicon duct o r . t h e dat a s h eet is fo r r e fe rence inf o rma tio n only . anti-counterfeiting policy fairchild semiconductor corporation?s anti-co unt erf e it ing po licy. f a irchild ?s an ti- c ount erf e it ing p o licy is also sta t ed o n o u r exte rnal web s it e, www. f a irchild s e mi.com, under s a les supp ort . cou n t e rf eit i ng of se mico nduct o r par ts is a g r owing p r oble m i n th e i ndust r y. all ma nuf actur e s o f semicond uctor p r odu ct s are expe r i encing cou n te rf eit i ng of t h e i r p a rt s. cu st omer s who inadver ten t ly purcha s e count erf e it part s ex per ience many p r oble m s su ch as loss of br and repu tat i on , su bsta ndard pe rfo rmance, f a ile d a pplicat ion , and incre a sed co st o f pro ducti on and manuf act u rin g d e la ys. fairchil d is ta kin g st ron g me asures to pro t ect o u rselve s a nd our custo mers f rom th e p r olif era t io n of cou n te rfe i t part s. fairchild str ongly encoura ges cust omers t o purchase fairchild par ts e i th er d i rect ly fr om fa ir c h ild o r from a u thorized fairchi l d dist r ibu t or s wh o are l i st ed by co unt ry on ou r web pa ge cit ed abo ve . p r odu ct s cu st omer s b u y eit her f r om fai r ch ild di rectl y o r fr om aut hor ized fairchi l d dist r ibu t or s are g enui ne pa rt s , ha v e fu ll t r aceab ilit y , mee t f a irchild? s quali t y sta ndar ds fo r ha nding and stor age a nd p r ovide acce ss t o fai r child?s f u ll rang e of u p -t o-da te t e chnical an d prod uct inf o rma tio n . fair c h ild and ou r aut hori z e d d i s t rib u to rs will st and be hind al l wa rrant ies and wi ll a ppro p riat ely add ress an d war rant y iss u es t hat may arise. fairchil d will not pro v id e any warra nt y covera ge or o t he r ass i s t ance f o r p a rt s bo ught f rom unau tho r ized so urces. fair c h ild is commit t ed to comba t th is glo bal prob lem and encou rage our cust omer s to do t heir par t in st op ping t h is pr actice by buying dire ct or fro m au th orized dist ribut or s. rev. i66 ?
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