absolute maximum ratings t a =25c unless otherwise noted AO4940 asymmetric dual n-channel mosfet product summary fet1 fet2 v ds (v) = 30v v ds (v) = 30v i d = 9.1a i d =7.8a (v gs = 10v) r ds(on) < 15m w < 21m w (v gs = 10v) r ds(on) < 23m w < 32m w (v gs = 4.5v) 100% uis tested 100% rg tested general description the AO4940 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a monolithically integrated schottky diode in paralle l with the synchronous mosfet to boost efficiency further. srfet tm g2 d2 s2 s1 g1 d2 d2 s2/d1 s2/d1 s2/d1 g2 2 4 5 1 3 86 7 top view g1 d1 s1 srfet tm s oft r ecovery mos fet : integrated schottky diode fet1 fet2 soic-8 top view bottom view pin1 10 sec steady-state 10 sec steady-state v ds v gs 9.1 7.6 7.8 6.5 7.3 6.1 6.3 5.2 i dm i ar e ar 2 1.4 2 1.4 1.3 0.9 1.3 0.9 t j , t stg symbol t 10s steady-state steady-state r q jl symbol t 10s steady-state steady-state r q jl 100 30 20 30 20 64 9 12 a thermal characteristics fet1(intergrated schottky d iode) maximum junction-to-ambient a r q ja continuous drain current af t a =25c junction and storage temperature range t a =70c i dsm c maximum junction-to-ambient a gate-source voltage drain-source voltage parameter symbol max fet1 max fet2 power dissipation a t a =25c p dsm t a =70c pulsed drain current b units absolute maximum ratings t a =25c unless otherwise noted vv w a -55 to 150 -55 to 150 17 43 avalanche current b a repetitive avalanche energy l=0.3mh b mj maximum junction-to-lead c thermal characteristics fet2 maximum junction-to-ambient a r q ja maximum junction-to-ambient a c/w c/w c/w parameter parameter units c/w c/w c/w units typ typ maximum junction-to-lead c 74 32 48 74 32 48 max 62.5 90 40 max 62.5 90 40 fet1 fet2 pin1 alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 0.1 t j =125c 10 i gss 0.1 m a v gs(th) gate threshold voltage 1.3 1.65 2.5 v i d(on) 100 a 12.5 15 t j =125c 18 22 18.5 23 m w g fs 26 s v sd 0.43 0.5 v i s 3 a c iss 903 1100 pf c oss 225 pf c rss 91 pf r g 1.7 3.0 w q g (10v) 15.3 20 q g (4.5v) 7.8 10 nc q gs 2.0 nc q gd 3.9 nc t d(on) 5.0 ns drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =9.1a reverse transfer capacitance v ds =v gs i d =250 m a fet1(intergrated schottky diode) electrical charact eristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss zero gate voltage drain current ma v ds =0v, v gs = 20v gate-body leakage current maximum body-diode + schottky continuous current input capacitance output capacitance dynamic parameters r ds(on) static drain-source on-resistance forward transconductance diode forward voltage turn-on delaytime m w v gs =4.5v, i d =7.3a i s =1a,v gs =0v v ds =5v, i d =9.1a total gate charge v gs =10v, v ds =15v, i d =9.1a gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 5.0 ns t r 9.2 ns t d(off) 17.8 ns t f 4.4 ns t rr 17 20 ns q rr 30.0 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =9.1a, di/dt=300a/ m s i f =9.1a, di/dt=300a/ m s turn-on rise time turn-off delaytime v gs =10v, v ds =15v,r l =1.65 w , r gen =3 w turn-off fall time turn-on delaytime a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 b oard with 2oz. copper, in a still air environment w ith t a =25 c. the value in any given application depends on the user' s specific board design. b: repetitive rating, pulse width limited by juncti on temperature t j(max) =150 c. c. the r ja is the sum of the thermal impedence from junction t o lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a stil l air environment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev2: jun. 2011 alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 fet1: typical electrical and thermal characteristic s dynamic parameters 0 20 40 60 80 100 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics 10v 4.5v v gs =3v 0 5 10 15 20 25 30 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics 5 10 15 20 25 0 5 10 15 20 25 30 r ds(on) (m w ww w ) 0.8 1 1.2 1.4 1.6 1.8 0 30 60 90 120 150 180 normalized on-resistance i d =9.1a v gs =10v v gs =4.5v 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =7.3a 4v 6v alpha & omega semiconductor, ltd. www.aosmd.com 5 0 5 10 15 20 25 30 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 is (a) vsd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 30 60 90 120 150 180 temperature (c) figure 4: on-resistance vs. junction temperature 5 10 15 20 25 30 35 40 45 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =9.1a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 fet1: typical electrical and thermal characteristic s dynamic parameters 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited 100 m s t j(max) =150 c t a =25 c 10s 1s 0 2 4 6 8 10 0 5 10 15 20 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =9.1a 0 20 40 60 80 100 power (w) t j(max) =150 c t a =25 c alpha & omega semiconductor, ltd. www.aosmd.com 0.0 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) 0 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure10: single pulse power rating junction-to- ambient (note e) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note e) d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 1.5 2.1 2.6 v i d(on) 64 a 16.5 21 t j =125c 24 31 23.7 32 m w g fs 20 s v sd 0.75 1 v i s 2.4 a c iss 373 448 pf c oss 67 pf c rss 41 pf r g 1.8 2.8 w q g (10v) 7.2 11 nc q g (4.5v) 3.5 nc q gs 1.3 nc q gd 1.7 nc t d(on) 4.5 ns maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =10v, v ds =15v, i d =7.8a total gate charge gate drain charge v gs =0v, v ds =15v, f=1mhz switching parameters total gate charge gate source charge gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =4.5v, i d =6a i s =1a,v gs =0v v ds =5v, i d =7.8a gate threshold voltage v ds =v gs i d =250 m a v ds =30v, v gs =0v v ds =0v, v gs = 20v zero gate voltage drain current gate-body leakage current fet2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a drain-source breakdown voltage on state drain current i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =7.8a reverse transfer capacitance alpha & omega semiconductor, ltd. www.aosmd.com t d(on) 4.5 ns t r 2.7 ns t d(off) 14.9 ns t f 2.9 ns t rr 10.5 12.6 ns q rr 4.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on delaytime turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.9 w , r gen =3 w turn-off fall time body diode reverse recovery time body diode reverse recovery charge i f =7.8a, di/dt=100a/ m s i f =7.8a, di/dt=100a/ m s a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the value in any given application depends on the user' s specific board design. b: repetitive rating, pulse width limited by juncti on temperature. c. the r q ja is the sum of the thermal impedence from junction t o lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the soa curve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. rev2: jun. 2011 alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 fet2: typical electrical and thermal characteristic s 25 125 c v ds =5v v gs =4.5v v gs =10v 0 10 20 30 40 50 60 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics v gs =3.5v 4.5v 6v 10v 0 3 6 9 12 15 1.5 2 2.5 3 3.5 4 4.5 i d (a) v gs (volts) figure 2: transfer characteristics 25 c 125 c v ds =5v 10 15 20 25 30 35 40 0 5 10 15 20 r ds(on) (m w ww w ) v gs =4.5v v gs =10v 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 normalized on-resistance v gs =10v v gs =4.5v alpha & omega semiconductor, ltd. www.aosmd.com this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i d =7.5a 25 c 125 10 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics 25 c 125 c 0.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature 10 20 30 40 50 60 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage i d =8a 25 c 125 c alpha & omega semiconductor, ltd. www.aosmd.com
AO4940 0 10 20 30 40 50 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) c oss c rss v ds =15v i d =7.5a t j(max) =150 c t a =25 c 10s 1s 0 2 4 6 8 10 0 2 4 6 8 v gs (volts) q g (nc) figure 7: gate-charge characteristics v ds =15v i d =8a 0 100 200 300 400 500 600 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) 10 m s 10ms 1ms 0.1s dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10s alpha & omega semiconductor, ltd. www.aosmd.com 0 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 10s 0.0 0.01 0.1 1 10 100 v ds (volts) figure 9: maximum forward biased safe operating area (note e) alpha & omega semiconductor, ltd. www.aosmd.com
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