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| to ? 220f 1. base 2. collector 3. emitter to-220f plastic-encapsulate transistors 3CA2050 transistor (pnp) features z high breakdown voltage z general purpose switching and amplification maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-1ma,i e =0 -180 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -160 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -6 v collector cut-off current i cbo v cb =-180v,i e =0 -10 a emitter cut-off current i ebo v eb =-6v,i c =0 -10 a h fe(1) v ce =-5v, i c =-0.2a 60 240 dc current gain h fe(2) v ce =-5v, i c =-1.5a 50 collector-emitter saturation voltage v ce(sat) i c =-500ma,i b =-50ma -1 v transition frequency f t v ce =-10v,i c =-0.05a 50 mhz classification of h fe (1) rank r o range 60-140 100-240 symbol parameter value unit v cbo collector-base voltage -180 v v ceo collector-emitter voltage -160 v v ebo emitter-base voltage -6 v i c collector current -1.5 a p c collector power dissipation 1.5 w r ja thermal resistance from junction to ambient 83 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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