US6J2 transistors rev.b 1/4 2.5v drive pch+pch mosfet US6J2 z structure z dimensions (unit : mm) silicon p-channel mosfet z features 1) two pch mosfet transistors in a single tumt6 package. 2) mounting cost and area can be cut in half. 3) low on-resistance. 4) low voltage drive (2.5v) makes this device ideal for portable equipment. 5) drive circuits can be simple. z applications z inner circuit switching z packaging specifications package code taping basic ordering unit (pieces) US6J2 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 2 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp w / total p d c tch c tstg limits unit drain-source voltage gate-source voltage drain current total power dissipation channel temperature range of storage temperature continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 50% ? 2 mounted on a ceramic board source current (body diode) ? 20 150 ? 55 to + 150 12 1 4 ? 0.4 ? 4 1.0 w / element 0.7 z thermal resistance parameter c/w / total rth(ch-a) symbol limits unit channel to ambient ? mounted on a ceramic board 125 c/w / element 179 ? (1) tr1 source (2) tr1 gate (3) tr2 drain (4) tr2 source (5) tr2 gate (6) tr1 drain ? 1 esd protection diode ? 2 body diode ? 2 ? 2 ? 1 ? 1 (1) (6) (3) (4) (2) (5) tumt6 abbreviated symbol : j02 0.2max.
US6J2 transistors rev.b 2/4 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? 10 av gs = 12v, v ds =0v v dd ? 15v ? 20 ?? vi d = ? 1ma, v gs =0v ??? 1.0 av ds = ? 20v, v gs =0v ? 0.7 ?? 2.0 v v ds = ? 10v, i d = ? 1ma ? 280 390 i d = ? 1a, v gs = ? 4.5v ? 310 430 m ? m ? m ? i d = ? 1a, v gs = ? 4v ? 570 800 i d = ? 0.5a, v gs = ? 2.5v 0.7 ?? sv ds = ? 10v, i d = ? 0.5a ? 150 ? pf v ds = ? 10v ? 20 20 ? pf v gs =0v ? 9 ? pf f=1mhz ? 8 ? ns ? 25 ? ns ? 10 ? ns ? 2.1 ? ns ? 0.5 ? nc ? 0.5 ? nc v gs = ? 4.5v r l =15 ? r g =10 ? ?? nc i d = ? 1a v dd ? 15 v i d = ? 0.5a v gs = ? 4.5v r l =30 ? r g =10 ? ? pulsed ? ? ? ? ? ? ? ? ? v sd ??? 1.2 v i s = ? 0.4a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions
US6J2 transistors rev.b 3/4 z electrical characteristic curves 0.01 0.1 1 10 100 drain-source voltage : ? v ds (v) capacitance : c (pf) 100 1000 10 ta = 25 c f = 1mhz v gs = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 10 100 1000 10000 1 0.01 0.1 1 10 drain current : ? i d (a) switching time : t (ns) fig.2 switching characteristics t d (off) t d (on) t r t f ta = 25 c v dd = ? 15v v gs = ? 4.5a r g = 10 ? pulsed ta = 25 c v dd = ? 15v i d = ? 1a r g = 10 ? pulsed 0 0.5 1.0 1.5 2.0 2.5 3.0 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : ? v gs (v) fig.3 dynamic input characteristics 0.6 1.0 1.4 1.8 2.2 2.6 3.0 gate-source voltage : ? v gs (v) 0.001 0.01 0.1 1 10 drain current : ? i d (a) fig.4 typical transfer characteristics v ds = ? 10v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 024681012 gate-source voltage : ? v gs (v) 0 250 500 750 1000 static drain-source on-state resistance : r ds (on) ( m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = ? 1a i d = ? 0.5a 0.0 0.5 1.0 1.5 source-drain voltage : ? v sd (v) 0.01 0.1 1 10 source current : ? i s (a) fig.6 source current vs. source-drain voltage ta = 25 c v gs = 0v pulsed 0.01 0.1 1 10 100 1000 10000 fig.7 static drain-source on-state resistance vs. drain current ( ? ) drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) v gs = ? 4.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 100 1000 10000 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ?? ) v gs = ? 4v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 100 1000 10000 drain current : ? i d (a) static drain-source on-state resistance : r ds (on) ( m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ) v gs = ? 2.5v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c
US6J2 transistors rev.b 4/4 z measurement circuits fig.10 switching time measurement circuit v gs r g v ds d.u.t. i d r l v dd fig.11 switching waveforms 90% 90% 90% 10% 10% 10% 50% 50% pulse width v gs v ds t on t off t r t d(on) tf t d(off) fig.12 gate charge measurement circuit v gs i g(const.) r g v ds d.u.t. i d r l v dd fig.13 gate charge waveform v g v gs charge q g q gs q gd
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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