? semiconductor components industries, llc, 2013 november, 2013 ? rev. 13 1 publication order number: mjd112/d mjd112 (npn), mjd117 (pnp) complementary darlington power transistors dpak for surface mount applications designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (? ? 1? suffix) ? electrically similar to popular tip31 and tip32 series ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free and are rohs compliant* *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. silicon power transistors 2 amperes 100 volts, 20 watts dpak ? 3 case 369d dpak case 369c marking diagrams a = assembly location y = year ww = work week x = 2 or 7 g = pb ? free package ayww j11xg see detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. ordering information yww j11xg http://onsemi.com dpak dpak ? 3
mjd112 (npn), mjd117 (pnp) http://onsemi.com 2 maximum ratings rating symbol max unit collector ? emitter voltage v ceo 100 vdc collector ? base voltage v cb 100 vdc emitter ? base voltage v eb 5 vdc collector current continuous peak i c 2 4 adc base current i b 50 madc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation (note1) @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ? 65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics characteristic symbol max unit thermal resistance, junction ? to ? case r jc 6.25 c/w thermal resistance, junction ? to ? ambient (note 1) r ja 71.4 c/w 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended.
mjd112 (npn), mjd117 (pnp) http://onsemi.com 3 ????????????????????????????????? ????????????????????????????????? (t c = 25 c unless otherwise noted) ????????????????????? ????????????????????? characteristic ???? ???? ???? ???? ???? ???? ???? ???? ????????????????????????????????? ????????????????????????????????? ????????????????????? ????????????????????? ????????????????????? collector ? emitter sustaining voltage (note 2) (i c = 30 madc, i b = 0) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? vdc ????????????????????? ????????????????????? ????????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 20 ???? ???? ???? adc ????????????????????? ????????????????????? ???? ???? ???? ???? ? ???? ???? 20 ???? ???? adc ????????????????????? ????????????????????? ????????????????????? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 2 ???? ???? ???? ????????????????????? ????????????????????? ????????????????????? ? cutoff current (v cb = 80 vdc, i e = 0) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 10 ???? ???? ???? adc ????????????????????? ????????????????????? ? cutoff current (v be = 5 vdc, i c = 0) ???? ???? ???? ???? ? ???? ???? 2 ???? ???? ????????????????????????????????? ????????????????????????????????? on characteristics ????????????????????? ????????????????????? ????????????????????? ????????????????????? dc current gain (i c = 0.5 adc, v ce = 3 vdc) (i c = 2 adc, v ce = 3 vdc) (i c = 4 adc, v ce = 3 vdc) ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ???? ? 12,000 ? ???? ???? ???? ???? ????????????????????? ????????????????????? ????????????????????? ????????????????????? collector ? emitter saturation voltage (i c = 2 adc, i b = 8 madc) (i c = 4 adc, i b = 40 madc) ???? ???? ???? ???? ???? ???? ???? ???? ? ? ???? ???? ???? ???? 2 3 ???? ???? ???? ???? ????????????????????? ????????????????????? ? emitter saturation voltage (i c = 4 adc, i b = 40 madc) ???? ???? ???? ???? ? ???? ???? 4 ???? ???? ????????????????????? ????????????????????? ????????????????????? ? emitter on voltage (i c = 2 adc, v ce = 3 vdc) ???? ???? ???? ???? ???? ???? ? ???? ???? ???? 2.8 ???? ???? ???? ????????????????????????????????? ????????????????????????????????? dynamic characteristics ????????????????????? ????????????????????? ????????????????????? current ? gain ? bandwidth product (i c = 0.75 adc, v ce = 10 vdc, f = 1 mhz) ???? ???? ???? ???? ???? ???? ???? ???? ???? ? ???? ???? ???? mhz ????????????????????? ????????????????????? ????????????????????? ???? ???? ???? ???? ???? ???? ? ? ???? ???? ???? 200 100 ???? ???? ???? 300 s, duty cycle 2%. *these ratings are applicable when surface mounted on the minimum pad sizes recommended.
mjd112 (npn), mjd117 (pnp) http://onsemi.com 4 0.04 0.2 4 0.1 0.06 0.6 1 4 i c , collector current (amp) v cc = 30 v i c /i b = 250 t, time (s) 2 1 0.8 0.6 0.4 0.2 t s t f figure 1. switching times test circuit figure 2. switching times v 2 approx +8 v 0 8 k scope v cc -30 v r c 51 for t d and t r , d 1 is disconnected and v 2 = 0 for npn test circuit reverse all polarities. 25 s t r , t f 10 ns duty cycle = 1% + 4 v t r t d @ v be(off) = 0 v pnp npn r b & r c varied to obtain desired current levels d 1 , must be fast recovery type, e.g.: 1n5825 used above i b 100 ma msd6100 used below i b 100 ma v 1 approx -12 v tut r b d 1 60 0.4 2 i b1 = i b2 t j = 25 c figure 3. thermal response t, time or pulse width (ms) 1 0.01 1000 0.3 0.2 0.07 r(t), effective transient r jc(t) = r(t) r jc r jc = 6.25 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.01 thermal resistance (normalized) 0.7 0.5 0.1 0.05 0.03 0.02 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 0.2 single pulse d = 0.5 0.05 0.1 0.01
mjd112 (npn), mjd117 (pnp) http://onsemi.com 5 i c , collector current (amp) figure 4. maximum rated forward biased safe operating area figure 5. power derating 2 v ce , collector-emitter voltage (volts) 0.3 100 5 2 0.5 0.2 bonding wire limited thermal limit second breakdown limit 520 3 t j = 150 c curves apply below rated v ceo 100 s 1ms dc 0.1 1 3 7 10 10 730 25 25 t, temperature ( c) 0 50 75 100 125 1 5 20 15 10 5 p d , power dissipation (watts) 2.5 0 2 1.5 1 0.5 t a t c t a surface mount t c 0.7 5ms 50 70 200 500 s active ? region safe ? operating area there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figures 5 and 6 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) < 150 c. t j(pk) may be calculated from the data in figure 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. c, capacitance (pf) v r , reverse voltage (volts) c ib 0.04 30 1 4 10 40 t c = 25 c 200 10 50 70 100 0.1 2 6 20 20 pnp npn 0.6 0.4 0.2 0.06 figure 6. capacitance c ob
mjd112 (npn), mjd117 (pnp) http://onsemi.com 6 v ce , collector-emitter voltage (volts) v ce , collector-emitter voltage (volts) i c , collector current (amp) npn mjd112 pnp mjd117 figure 7. dc current gain figure 8. collector saturation region figure 9. ?on voltages 0.04 i c , collector current (amp) 300 0.06 0.2 2 k 800 4 k h fe , dc current gain v ce = 3 v t j = 125 c 3 k 0.1 0.6 25 c -55 c 1 k 0.4 1 6 k 400 600 2 4 0.04 300 0.06 0.2 2 k 800 4 k h fe , dc current gain 3 k 0.1 0.6 25 c -55 c 1 k 0.4 1 6 k 400 600 24 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 i c = 0.5 a 1 a 1 3 1 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v be @ v ce = 3 v v ce(sat) @ i c /i b = 250 0.06 0.2 2 0.1 0.6 0.4 1 4 0.04 i c , collector current (amp) 1.4 1 v, voltage (volts) 2.2 1.8 0.6 0.2 t j = 25 c v be(sat) @ i c /i b = 250 v ce(sat) @ i c /i b = 250 0.06 0.2 2 0.1 0.6 0.4 1 4 20 50 100 3.4 i b , base current (ma) 2.6 2.2 1.8 1.4 0.6 0.1 0.2 0.5 10 25 1 3 1 20 50 100 v be @ v ce = 3 v t c = 125 c v ce = 3 v 4 a t j = 125 c 2 a t j = 125 c i c = 0.5 a 1 a 4 a 2 a typical electrical characteristics
mjd112 (npn), mjd117 (pnp) http://onsemi.com 7 npn mjd112 pnp mjd117 0.04 i c , collector current (amp) 0.06 0.2 0 *applied for i c /i b < h fe /3 0.1 0.6 -55 c to 25 c 0.4 1 -4.8 24 10 4 v be , base-emitter voltage (volts) 10 -1 0 -0.4 , collector current (a) i c 10 3 10 2 10 1 10 0 +0.2 +0.4 +0.6 t j = 150 c 100 c reverse forward 25 c v ce = 30 v 10 5 -0.6 -0.2 +0.8 +1 +1.2 +1.4 10 4 v be , base-emitter voltage (volts) 10 -1 0 +0.4 , collector current (a) i c 10 3 10 2 10 1 10 0 -0.2 -0.4 -0.6 10 5 +0.6 +0.2 -0.8 -1 -1.2 -1.4 +0.8 -4 -3.2 -2.4 -1.6 -0.8 vc for v be 25 c to 150 c 25 c to 150 c * vc for v ce(sat) 0.04 i c , collector current (amp) 0.06 0.2 0.1 0.6 0.4 1 2 4 figure 10. temperature coefficients figure 11. collector cut ? off region figure 12. darlington schematic base emitter collector 8 k 120 pnp base emitter collector 8 k 120 npn 0 -4.8 +0.8 -4 -3.2 -2.4 -1.6 -0.8 v , temperature coefficients (mv/ c) v , temperature coefficients (mv/ c) -55 c to 25 c *applies for i c /i b < h fe /3 * vc for v ce(sat) vb for v be 25 c to 150 c -55 c to 25 c 25 c to 150 c -55 c to 25 c v ce = 30 v reverse forward t j = 150 c 100 c 25 c
mjd112 (npn), mjd117 (pnp) http://onsemi.com 8 ordering information device package type package shipping ? mjd112g dpak (pb ? free) 369c 75 units / rail NJVMJD112g* dpak (pb ? free) 369c 75 units / rail mjd112 ? 1g dpak ? 3 (pb ? free) 369d 75 units / rail mjd112rlg dpak (pb ? free) 369c 1,800 tape & reel mjd112t4g dpak (pb ? free) 369c 2,500 tape & reel NJVMJD112t4g* dpak (pb ? free) 369c 2,500 tape & reel mjd117g dpak (pb ? free) 369c 75 units / rail mjd117 ? 1g dpak ? 3 (pb ? free) 369d 75 units / rail mjd117rlg dpak (pb ? free) 369c 1,800 tape & reel mjd117t4g dpak (pb ? free) 369c 2,500 tape & reel njvmjd117t4g* dpak (pb ? free) 369c 2,500 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable.
mjd112 (npn), mjd117 (pnp) http://onsemi.com 9 package dimensions dpak case 369c issue d 5.80 0.228 2.58 0.101 1.6 0.063 6.20 0.244 3.0 0.118 6.172 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd112 (npn), mjd117 (pnp) http://onsemi.com 10 package dimensions 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mjd112/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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